Monolithic integration of embedded Ⅲ-Ⅴ lasers on SOI

Wen-Qi Wei; An He; Bo Yang; Zi-Hao Wang; Jing-Zhi Huang; Dong Han; Ming Ming; Xuhan Guo; Yikai Su; Jian-Jun Zhang; Ting Wang

doi:10.1038/s41377-023-01128-z

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Monolithic integration of embedded Ⅲ-Ⅴ lasers on SOI

Original Articles

- Monolithic integration of embedded Ⅲ-Ⅴ lasers on SOI
- Light: Science & Applications Vol. 12, Issue 5, Pages: 743-753(2023)
- Affiliations：
  
  1.Institute of Physics, Chinese Academy of Sciences, Beijing, China
  2.Songshan Lake Materials Laboratory, Dongguan, Guangdong, China
  3.State Key Laboratory of Advanced Optical, Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, China
  4.School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
- Author bio：
  
  Xuhan Guo (guoxuhan@sjtu.edu.cn)
  Yikai Su (yikaisu@sjtu.edu.cn)
  Jian-Jun Zhang (jjzhang@iphy.ac.cn)
  Ting Wang (wangting@iphy.ac.cn)
- Funds：
- DOI：10.1038/s41377-023-01128-z
  CLC：
- Published：31 May 2023，
  
  Published Online：3 April 2023，
  
  Received：17 September 2022，
  
  Revised：3 March 2023，
  
  Accepted：7 March 2023
Scan for full text
Wei, W. Q. et al. Monolithic integration of embedded Ⅲ-Ⅴ lasers on SOI. Light: Science & Applications, 12, 743-753 (2023).
DOI：

Wei, W. Q. et al. Monolithic integration of embedded Ⅲ-Ⅴ lasers on SOI. Light: Science & Applications, 12, 743-753 (2023). DOI： 10.1038/s41377-023-01128-z.

摘要

Abstract

Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of Ⅲ-Ⅴ lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration

which can provide considerable economical

energy-efficient and foundry-scalable on-chip light sources

that has not been reported yet. Here

we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate

enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy (MBE)

high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture

embedded Ⅲ-Ⅴ lasers on SOI with continuous-wave lasing up to 85 ℃ are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides

with estimated coupling efficiency of approximately -6.7 dB. The results presented here provide a scalable and low-cost epitaxial method for the realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration.

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