
1.State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, China
2.State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
3.Beijing Institute of Control Engineering, Beijing 100190, China
4.Science and Technology on Space Intelligent Control Laboratory, Beijing 100190, China
5.Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030024, China
Liansheng Li (liliansheng502@163.com)
Yanjun Fang (jkfang@zju.edu.cn)
Qingfeng Dong (qfdong@jlu.edu.cn)
Published:31 May 2023,
Published Online:3 April 2023,
Received:27 September 2022,
Revised:26 February 2023,
Accepted:9 March 2023
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Song, Y. L. et al. Detector-grade perovskite single-crystal wafers via stress-free gel-confined solution growth targeting high-resolution ionizing radiation detection. Light: Science & Applications, 12, 754-765 (2023).
Song, Y. L. et al. Detector-grade perovskite single-crystal wafers via stress-free gel-confined solution growth targeting high-resolution ionizing radiation detection. Light: Science & Applications, 12, 754-765 (2023). DOI: 10.1038/s41377-023-01129-y.
Solution-processed organic‒inorganic halide perovskite (OIHP) single crystals (SCs) have demonstrated great potential in ionizing radiation detection due to their outstanding charge transport properties and low-cost preparation. However
the energy resolution (ER) and stability of OIHP detectors still lag far behind those of melt-grown inorganic perovskite and commercial CdZnTe counterparts due to the absence of detector-grade high-quality OIHP SCs. Here
we reveal that the crystallinity and uniformity of OIHP SCs are drastically improved by relieving interfacial stress with a facial gel-confined solution growth strategy
thus enabling the direct preparation of large-area detector-grade SC wafers up to 4 cm with drastically suppressed electronic and ionic defects. The resultant radiation detectors show both a small dark current below 1 nA and excellent baseline stability of 4.0 × 10
−8
nA cm
−1
s
−1
V
−1
which are rarely realized in OIHP detectors. Consequently
a record high ER of 4.9% at 59.5 keV is achieved under a standard
241
Am gamma-ray source with an ultralow operating bias of 5 V
representing the best gamma-ray spectroscopy performance among all solution-processed semiconductor radiation detectors ever reported.
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