A multi-mode super-fano mechanism for enhanced third harmonic generation in silicon metasurfaces

David Hähnel; Christian Golla; Maximilian Albert; Thomas Zentgraf; Viktor Myroshnychenko; Jens Förstner; Cedrik Meier

doi:10.1038/s41377-023-01134-1

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A multi-mode super-fano mechanism for enhanced third harmonic generation in silicon metasurfaces

Original Articles

- A multi-mode super-fano mechanism for enhanced third harmonic generation in silicon metasurfaces
- Light: Science & Applications Vol. 12, Issue 5, Pages: 847-854(2023)
- Affiliations：
  
  1.Theoretical Electrical Engineering & CeOPP, Paderborn University, 33098, Paderborn, Germany
  2.Physics Department & CeOPP, Paderborn University, 33098, Paderborn, Germany
- Author bio：
  
  David Hähnel (hdavid@mail.upb.de)
  Christian Golla (christian.golla@upb.de)
- Funds：
- DOI：10.1038/s41377-023-01134-1
  CLC：
- Published：31 May 2023，
  
  Published Online：21 April 2023，
  
  Received：26 October 2022，
  
  Revised：8 March 2023，
  
  Accepted：14 March 2023
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Hähnel, D. et al. A multi-mode super-fano mechanism for enhanced third harmonic generation in silicon metasurfaces. Light: Science & Applications, 12, 847-854 (2023).
DOI：

Hähnel, D. et al. A multi-mode super-fano mechanism for enhanced third harmonic generation in silicon metasurfaces. Light: Science & Applications, 12, 847-854 (2023). DOI： 10.1038/s41377-023-01134-1.

摘要

Abstract

We present strong enhancement of third harmonic generation in an amorphous silicon metasurface consisting of elliptical nano resonators. We show that this enhancement originates from a new type of multi-mode Fano mechanism. These 'Super-Fano' resonances are investigated numerically in great detail using full-wave simulations. The theoretically predicted behavior of the metasurface is experimentally verified by linear and nonlinear transmission spectroscopy. Moreover

quantitative nonlinear measurements are performed

in which an absolute conversion efficiency as high as

max

≈ 2.8 × 10

−7

a peak power intensity of 1.2 GW cm

−2

is found. Compared to an unpatterned silicon film of the same thickness amplification factors of up to ~900 are demonstrated. Our results pave the way to exploiting a strong Fano-type multi-mode coupling in metasurfaces for high THG in potential applications.

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