
1.State Key Laboratory of Superhard Materials, Key Laboratory of Automobile Materials of Ministry of Education, School of Materials Science and Engineering, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun 130012, China
2.College of Information Science and Engineering, Jiaxing University, Jiaxing 314001, China
3.Electron Microscopy Center, Jilin University, Changchun 130012, China
4.State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun 130012, China
5.National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China
Chaoquan Hu (cqhu@jlu.edu.cn)
Liang Shen (shenliang@jlu.edu.cn)
Jiaqi Zhu (zhujq@hit.edu.cn)
Published:30 June 2023,
Published Online:21 April 2023,
Received:18 October 2022,
Revised:22 March 2023,
Accepted:22 March 2023
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Hu, C. Q. et al. Far-infrared transparent conductors. Light: Science & Applications, 12, 982-993 (2023).
Hu, C. Q. et al. Far-infrared transparent conductors. Light: Science & Applications, 12, 982-993 (2023). DOI: 10.1038/s41377-023-01139-w.
The long-standing challenge in designing far-infrared transparent conductors (FIRTC) is the combination of high plasma absorption edge (
λ
p
) and high conductivity (
σ
). These competing requirements are commonly met by tuning carrier concentration or/and effective carrier mass in a metal oxide/oxonate with low optical dielectric constant (
ε
opt
= 2–7). However
despite the high
σ
the transparent band is limited to mid-infrared (
λ
p
<
5 μm). In this paper
we break the trade-off between high
σ
and
λ
p
by increasing the “so-called constant”
ε
opt
that has been neglected
and successfully develop the material family of FIRTC with
ε
opt
>
15 and
λ
p
>
15 μm. These FIRTC crystals are mainly octahedrally-coordinated heavy-metal chalcogenides and their solid solutions with shallow-level defects. Their high
ε
opt
relies on the formation of electron-deficiency multicenter bonds resulting in the great electron-polarization effect. The new FIRTC enables us to develop the first “continuous film” type far-infrared electromagnetic shielder that is unattainable using traditional materials. Therefore
this study may inaugurate a new era in far-infrared optoelectronics.
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