Nanograin network memory with reconfigurable percolation paths for synaptic interactions

Hoo-Cheol Lee; Jungkil Kim; Ha-Reem Kim; Kyoung-Ho Kim; Kyung-Jun Park; Jae-Pil So; Jung Min Lee; Min-Soo Hwang; Hong-Gyu Park

doi:10.1038/s41377-023-01168-5

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Nanograin network memory with reconfigurable percolation paths for synaptic interactions

Original Articles

- Nanograin network memory with reconfigurable percolation paths for synaptic interactions
- Light: Science & Applications Vol. 12, Issue 6, Pages: 1040-1050(2023)
- Affiliations：
  
  1.Department of Physics, Korea University, Seoul 02841, Republic of Korea
  2.Department of Physics, Jeju National University, Jeju 63243, Republic of Korea
  3.Department of Physics, Chungbuk National University, Cheongju 28644, Republic of Korea
- Author bio：
  
  Jungkil Kim (jungkil@jejunu.ac.kr)
  Hong-Gyu Park (hgpark@korea.ac.kr)
- Funds：
- DOI：10.1038/s41377-023-01168-5
  CLC：
- Published：30 June 2023，
  
  Published Online：15 May 2023，
  
  Received：10 December 2022，
  
  Revised：15 April 2023，
  
  Accepted：23 April 2023
Scan for full text
Lee, H. C. et al. Nanograin network memory with reconfigurable percolation paths for synaptic interactions. Light: Science & Applications, 12, 1040-1050 (2023).
DOI：

Lee, H. C. et al. Nanograin network memory with reconfigurable percolation paths for synaptic interactions. Light: Science & Applications, 12, 1040-1050 (2023). DOI： 10.1038/s41377-023-01168-5.

摘要

Abstract

The development of memory devices with functions that simultaneously process and store data is required for efficient computation. To achieve this

artificial synaptic devices have been proposed because they can construct hybrid networks with biological neurons and perform neuromorphic computation. However

irreversible aging of these electrical devices causes unavoidable performance degradation. Although several photonic approaches to controlling currents have been suggested

suppression of current levels and switching of analog conductance in a simple photonic manner remain challenging. Here

we demonstrated a nanograin network memory using reconfigurable percolation paths in a single Si nanowire with solid core/porous shell and pure solid core segments. The electrical and photonic control of current percolation paths enabled the analog and reversible adjustment of the persistent current level

exhibiting memory behavior and current suppression in this single nanowire device. In addition

the synaptic behaviors of memory and erasure were demonstrated through potentiation and habituation processes. Photonic habituation was achieved using laser illumination on the porous nanowire shell

with a linear decrease in the postsynaptic current. Furthermore

synaptic elimination was emulated using two adjacent devices interconnected on a single nanowire. Therefore

electrical and photonic reconfiguration of the conductive paths in Si nanograin networks will pave the way for next-generation nanodevice technologies.

关键词

Keywords

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