Linewidth narrowing in self-injection-locked on-chip lasers

Emad Alkhazraji; Weng W. Chow; Frédéric Grillot; John E. Bowers; Yating Wan

doi:10.1038/s41377-023-01172-9

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Linewidth narrowing in self-injection-locked on-chip lasers

Original Articles

- Linewidth narrowing in self-injection-locked on-chip lasers
- Light: Science & Applications Vol. 12, Issue 10, Pages: 2074-2083(2023)
- Affiliations：
  
  1.Integrated Photonics Lab, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia
  2.Sandia National Laboratories, Albuquerque, NM 87185-1086, USA
  3.LTCI, Télécom Paris, Institut Polytechnique de Paris, 91120 Palaiseau, France
  4.Department of Electronic and Computer Engineering, University of California – Santa Barbara, Santa Barbara, CA 93106, USA
- Author bio：
  
  Weng W. Chow (wwchow@sandia.gov)
  Yating Wan (yating.wan@kaust.eu.sa)
- Funds：
- DOI：10.1038/s41377-023-01172-9
  CLC：
- Published：31 October 2023，
  
  Published Online：28 June 2023，
  
  Received：14 January 2023，
  
  Revised：25 April 2023，
  
  Accepted：26 April 2023
- Accepted：
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Alkhazraji, E. et al. Linewidth narrowing in self-injection-locked on-chip lasers. Light: Science & Applications, 12, 2074-2083 (2023).
DOI：

Alkhazraji, E. et al. Linewidth narrowing in self-injection-locked on-chip lasers. Light: Science & Applications, 12, 2074-2083 (2023). DOI： 10.1038/s41377-023-01172-9.

摘要

Abstract

Stable laser emission with narrow linewidth is of critical importance in many applications

including coherent communications

LIDAR

and remote sensing. In this work

the physics underlying spectral narrowing of self-injection-locked on-chip lasers to Hz-level lasing linewidth is investigated using a composite-cavity structure. Heterogeneously integrated Ⅲ–Ⅴ/SiN lasers operating with quantum-dot and quantum-well active regions are analyzed with a focus on the effects of carrier quantum confinement. The intrinsic differences are associated with gain saturation and carrier-induced refractive index

which are directly connected with 0- and 2-dimensional carrier densities of states. Results from parametric studies are presented for tradeoffs involved with tailoring the linewidth

output power

and injection current for different device configurations. Though both quantum-well and quantum-dot devices show similar linewidth-narrowing capabilities

the former emits at a higher optical power in the self-injection-locked state

while the latter is more energy-efficient. Lastly

a multi-objective optimization analysis is provided to optimize the operation and design parameters. For the quantum-well laser

minimizing the number of quantum-well layers is found to decrease the threshold current without significantly reducing the output power. For the quantum-dot laser

increasing the quantum-dot layers or density in each layer increases the output power without significantly increasing the threshold current. These findings serve to guide more detailed parametric studies to produce timely results for engineering design.

关键词

Keywords

references

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