Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

Andres Remis; Laura Monge-Bartolome; Michele Paparella; Audrey Gilbert; Guilhem Boissier; Marco Grande; Alan Blake; Liam O'Faolain; Laurent Cerutti; Jean-Baptiste Rodriguez; Eric Tournié

doi:10.1038/s41377-023-01185-4

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Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

Original Articles

- Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides
- Light: Science & Applications Vol. 12, Issue 7, Pages: 1381-1390(2023)
- Affiliations：
  
  1.IES, University of Montpellier, CNRS, F-34000 Montpellier, France
  2.Department of Electrical and Information Engineering, Polytechnic University of Bari, 4 Via E. Orabona, IT- 70126 Bari, Italy
  3.Tyndall National Institute, Lee Maltings Complex, Dyke Parade, IR-T12R5CP Cork, Ireland
  4.Centre for Advanced Photonics and Process Analysis, Munster Technological University, Bishopstown, IR-T12P928 Cork, Ireland
- Author bio：
  
  Eric Tournié (eric.tournie@umontpellier.fr)
- Funds：
- DOI：10.1038/s41377-023-01185-4
  CLC：
- Published：31 July 2023，
  
  Published Online：16 June 2023，
  
  Received：25 November 2022，
  
  Revised：27 April 2023，
  
  Accepted：16 May 2023
- Accepted：
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Remis, A. et al. Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides. Light: Science & Applications, 12, 1381-1390 (2023).
DOI：

Remis, A. et al. Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides. Light: Science & Applications, 12, 1381-1390 (2023). DOI： 10.1038/s41377-023-01185-4.

摘要

Abstract

Silicon (Si) photonics has recently emerged as a key enabling technology in many application fields thanks to the mature Si process technology

the large silicon wafer size

and promising Si optical properties. The monolithic integration by direct epitaxy of Ⅲ–Ⅴ lasers and Si photonic devices on the same Si substrate has been considered for decades as the main obstacle to the realization of dense photonics chips. Despite considerable progress in the last decade

only discrete Ⅲ–Ⅴ lasers grown on bare Si wafers have been reported

whatever the wavelength and laser technology. Here we demonstrate the first semiconductor laser grown on a patterned Si photonics platform with light coupled into a waveguide. A mid-IR

GaSb-based diode laser was directly grown on a pre-patterned Si photonics wafer equipped with SiN waveguides clad by SiO

. Growth and device fabrication challenges

arising from the template architecture

were overcome to demonstrate more than 10 mW outpower of emitted light in continuous wave operation at room temperature. In addition

around 10% of the light was coupled into the SiN waveguides

in good agreement with theoretical calculations for this butt-coupling configuration. This work lift an important building block and it paves the way for future low-cost

large-scale

fully integrated photonic chips.

关键词

Keywords

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