Electrical programmable multilevel nonvolatile photonic random-access memory

Jiawei Meng; Yaliang Gui; Behrouz Movahhed Nouri; Xiaoxuan Ma; Yifei Zhang; Cosmin-Constantin Popescu; Myungkoo Kang; Mario Miscuglio; Nicola Peserico; Kathleen Richardson; Juejun Hu; Hamed Dalir; Volker J. Sorger

doi:10.1038/s41377-023-01213-3

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Electrical programmable multilevel nonvolatile photonic random-access memory

Original Articles

- Electrical programmable multilevel nonvolatile photonic random-access memory
- Light: Science & Applications Vol. 12, Issue 11, Pages: 2325-2334(2023)
- Affiliations：
  
  1.Department of Electrical and Computer Engineering, George Washington University, Washington DC 20052, USA
  2.Florida Semiconductor Institute, University of Florida, Gainesville, FL 32603, USA
  3.Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32603, USA
  4.Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
  5.CREOL, The College of Optics & Photonics, University of Central Florida, Orlando, FL 32816, USA
- Author bio：
  
  Volker J. Sorger (volker.sorger@ufl.edu)
- Funds：
- DOI：10.1038/s41377-023-01213-3
  CLC：
- Published：30 November 2023，
  
  Published Online：01 August 2023，
  
  Received：17 January 2023，
  
  Revised：09 June 2023，
  
  Accepted：20 June 2023
- Accepted：
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Meng, J. W. et al. Electrical programmable multilevel nonvolatile photonic random-access memory. Light: Science & Applications, 12, 2325-2334 (2023).
DOI：

Meng, J. W. et al. Electrical programmable multilevel nonvolatile photonic random-access memory. Light: Science & Applications, 12, 2325-2334 (2023). DOI： 10.1038/s41377-023-01213-3.

摘要

Abstract

Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase-Change Materials (PCMs) have been showed multilevel memory capability

but demonstrations still yield relatively high optical loss and require cumbersome WRITE-ERASE approaches increasing power consumption and system package challenges. Here we demonstrate a multistate electrically programmed low-loss nonvolatile photonic memory based on a broadband transparent phase-change material (Ge2Sb2Se5

GSSe) with ultralow absorption in the amorphous state. A zero-static-power and electrically programmed multi-bit P-RAM is demonstrated on a silicon-on-insulator platform

featuring efficient amplitude modulation up to 0.2 dB/μm and an ultralow insertion loss of total 0.12 dB for a 4-bit memory showing a 100× improved signal to loss ratio compared to other phase-change-materials based photonic memories. We further optimize the positioning of dual microheaters validating performance tradeoffs. Experimentally we demonstrate a half-a-million cyclability test showcasing the robust approach of this material and device. Low-loss photonic retention-of-state adds a key feature for photonic functional and programmable circuits impacting many applications including neural networks

LiDAR

and sensors for example.

关键词

Keywords

references

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