Infrared avalanche photodiodes from bulk to 2D materials

Piotr Martyniuk; Peng Wang; Antoni Rogalski; Yue Gu; Ruiqi Jiang; Fang Wang; Weida Hu

doi:10.1038/s41377-023-01259-3

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Infrared avalanche photodiodes from bulk to 2D materials

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- Infrared avalanche photodiodes from bulk to 2D materials
- Light: Science & Applications Vol. 12, Issue 10, Pages: 2027-2052(2023)
- Affiliations：
  
  1.Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Street, 00-908, Warsaw, Poland
  2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, China
- Author bio：
  
  Piotr Martyniuk (piotr.martyniuk@wat.edu.pl)
- Funds：
- DOI：10.1038/s41377-023-01259-3
  CLC：
- Published：31 October 2023，
  
  Published Online：31 August 2023，
  
  Received：16 February 2023，
  
  Revised：07 August 2023，
  
  Accepted：07 August 2023
- Accepted：
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Martyniuk, P. et al. Infrared avalanche photodiodes from bulk to 2D materials. Light: Science & Applications, 12, 2027-2052 (2023).
DOI：

Martyniuk, P. et al. Infrared avalanche photodiodes from bulk to 2D materials. Light: Science & Applications, 12, 2027-2052 (2023). DOI： 10.1038/s41377-023-01259-3.

摘要

Abstract

Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one—optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of A

Ⅲ

Ⅴ

Ⅱ

Ⅵ

and potential alternatives to formerly mentioned—"

third wave

" superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning

the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device's performance towards higher bandwidths

lower noise

and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in A

Ⅲ

Ⅴ

APDs

such as AlInAsSb

which may be used in future optical communications

type-Ⅱ superlattice (T2SLs

"Ga-based" and "Ga-free")

and 2D materials-based IR APDs. The latter—atomically thin 2D materials exhibit huge potential in APDs and could be consider

ed as an alternative material to the well-known

sophisticated

and developed A

Ⅲ

Ⅴ

APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs' performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs' active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more

APDs can operate within visible (VIS)

near-infrared (NIR)/mid-wavelength infrared range (MWIR)

with a responsivity ~80 A/W

external quantum efficiency ~24.8%

gain ~10

for MWIR [wavelength

= 4 μm

temperature

= 10–180 K

Black Phosphorous (BP)/InSe APD

]

. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance—sensitivity and low excess noise.

关键词

Keywords

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