Engineering electrode interfaces for telecom-band photodetection in MoS<sub>2</sub>/Au heterostructures via sub-band light absorption

Chengyun Hong; Saejin Oh; Vu Khac Dat; Sangyeon Pak; SeungNam Cha; Kyung-Hun Ko; Gyung-Min Choi; Tony Low; Sang-Hyun Oh; Ji-Hee Kim

doi:10.1038/s41377-023-01308-x

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Engineering electrode interfaces for telecom-band photodetection in MoS₂/Au heterostructures via sub-band light absorption

Original Articles

- Engineering electrode interfaces for telecom-band photodetection in MoS₂/Au heterostructures via sub-band light absorption
- Light: Science & Applications Vol. 12, Issue 12, Pages: 2677-2687(2023)
- Affiliations：
  
  1.Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
  2.Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 16419, Republic of Korea
  3.School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Republic of Korea
  4.Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
  5.Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA
  6.Department of Physics, Pusan National University, Busan 46241, Republic of Korea
- Author bio：
  
  Tony Low (tlow@umn.edu)
  Sang-Hyun Oh (sang@umn.edu)
  Ji-Hee Kim (kimjihee@pusan.ac.kr)
- Funds：
- DOI：10.1038/s41377-023-01308-x
  CLC：
- Published：31 December 2023，
  
  Published Online：23 November 2023，
  
  Received：04 April 2023，
  
  Revised：27 September 2023，
  
  Accepted：13 October 2023
- Accepted：
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Hong, C. Y. et al. Engineering electrode interfaces for telecom-band photodetection in MoS₂/Au heterostructures via sub-band light absorption. Light: Science & Applications, 12, 2677-2687 (2023).
DOI：

Hong, C. Y. et al. Engineering electrode interfaces for telecom-band photodetection in MoS₂/Au heterostructures via sub-band light absorption. Light: Science & Applications, 12, 2677-2687 (2023). DOI： 10.1038/s41377-023-01308-x.

摘要

Abstract

Transition metal dichalcogenide (TMD) layered semiconductors possess immense potential in the design of photonic

electronic

optoelectronic

and sensor devices. However

the sub-bandgap light absorption of TMD in the range from near-infrared (NIR) to short-wavelength infrared (SWIR) is insufficient for applications beyond the bandgap limit. Herein

we report that the sub-bandgap photoresponse of MoS

/Au heterostructures can be robustly modulated by the electrode fabrication method employed. We observed up to 60% sub-bandgap absorption in the MoS

/Au heterostructure

which includes the hybridized interface

where the Au layer was applied via sputter deposition. The greatly enhanced absorption of sub-bandgap light is due to the planar cavity formed by MoS

and Au; as such

the absorption spectrum can be tuned by altering the thickness of the MoS

layer. Photocurrent in the SWIR wavelength range increases due to increased absorption

which means that broad wavelength detection from visible toward SWIR is possible. We also achieved rapid photoresponse (~150 µs) and high responsivity (17 mA W

−1

) at an excitation wavelength of 1550 nm. Our findings demonstrate a facile method for optical property modulation using metal electrode

engineering and for realizing SWIR photodetection in wide-bandgap 2D materials.

关键词

Keywords

references

Huo, N. J.&Konstantatos, G. Recent progress and future prospects of 2D-based photodetectors.Adv. Mater.30, 1801164 (2018)..

Koppens, F. H. L. et al. Photodetectors based on graphene, other two-dimensional materials and hybrid systems.Nat. Nanotechnol.9, 780–793 (2014)..

Lu, H. et al. Magnetic plasmon resonances in nanostructured topological insulators for strongly enhanced light-MoS2interactions.Light Sci. Appl.9, 191 (2020)..

Yin, Z. Y. et al. Single-layer MoS2phototransistors.ACS Nano6, 74–80 (2012)..

Yang, H. et al. Highly scalable synthesis of MoS2thin films with precise thickness control via polymer-assisted deposition.Chem. Mater.29, 5772–5776 (2017)..

Liu, L. et al. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire.Nature605, 69–75 (2022)..

Mannix, A. J. et al. Robotic four-dimensional pixel assembly of van der Waals solids.Nat. Nanotechnol.17, 361–366 (2022)..

Nur, R. et al. High responsivity in MoS2phototransistors based on charge trapping HfO2dielectrics.Commun. Mater.1, 103 (2020)..

Wang, H. N. et al. Ultrafast response of monolayer molybdenum disulfide photodetectors.Nat. Commun.6, 8831 (2015)..

Shlyakhov, I. et al. Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2and WS2films from photoconductivity spectra.J. Appl. Phys.129, 155302 (2021)..

Chen, X. L. et al. Widely tunable black phosphorus mid-infrared photodetector.Nat. Commun.8, 1672 (2017)..

Yu, W. Z. et al. Near-infrared photodetectors based on MoTe2/graphene heterostructure with high responsivity and flexibility.Small13, 1700268 (2017)..

Hong, C. Y. et al. Inclined ultrathin Bi2O2Se films: a building block for functional van der Waals heterostructures.ACS Nano14, 16803–16812 (2020)..

Wu, J. H. et al. Waveguide-integrated PdSe2photodetector over a broad infrared wavelength range.Nano Lett.22, 6816–6824 (2022)..

Wang, Y. et al. Bound-states-in-continuum hybrid integration of 2D platinum diselenide on silicon nitride for high-speed photodetectors.ACS Photonics7, 2643–2649 (2020)..

Wu, D. et al. Ultrabroadband and high-detectivity photodetector based on WS2/Ge heterojunction through defect engineering and interface passivation.ACS Nano15, 10119–10129 (2021)..

Xiao, P. et al. Solution-processed 3D RGO-MoS2/pyramid si heterojunction for ultrahigh detectivity and ultra-broadband photodetection.Adv. Mater.30, 1801729 (2018)..

Xie, Y. et al. Ultrabroadband MoS2photodetector with spectral response from 445 to 2717 nm.Adv. Mater.29, 1605972 (2017)..

Wang, X. D. et al. Ultrasensitive and broadband MoS2photodetector driven by ferroelectrics.Adv. Mater.27, 6575–6581 (2015)..

Zhang, Q. et al. High-responsivity MoS2hot-electron telecom-band photodetector integrated with microring resonator.Appl. Phys. Lett.120, 261111 (2022)..

Li, Z. W. et al. Telecom-band waveguide-integrated MoS2photodetector assisted by hot electrons.ACS Photonics9, 282–289 (2022)..

Kufer, D.&Konstantatos, G. Highly sensitive, encapsulated MoS2photodetector with gate controllable gain and speed.Nano Lett.15, 7307–7313 (2015)..

Yang, H. et al. Bolometric effect in Bi2O2Se photodetectors.Small15, 1904482 (2019)..

Li, X. H. et al. High performance sub-bandgap photodetectionviainternal photoemission based on ideal metal/2D-material van der Waals Schottky interface.Nanoscale13, 16448–16456 (2021)..

Sun, Q. X. et al. Photodetection by hot electrons or hot holes: a comparable study on physics and performances.ACS Omega4, 6020–6027 (2019)..

Hong, C. Y. et al. Hot electron dynamics in MoS2/Pt van der Waals electrode interface for self‐powered hot electron photodetection.Adv. Mater. Interfaces10, 2300140 (2023)..

Wu, K. et al. Efficient hot-electron transfer by a plasmon-induced interfacial charge-transfer transition.Science349, 632–635 (2015)..

Knight, M. W. et al. Photodetection with active optical antennas.Science332, 702–704 (2011)..

Brongersma, M. L., Halas, N. J.&Nordlander, P. Plasmon-induced hot carrier science and technology.Nat. Nanotechnol.10, 25–34 (2015)..

Kats, M. A. et al. Nanometre optical coatings based on strong interference effects in highly absorbing media.Nat. Mater.12, 20–24 (2013)..

Liu, Y. et al. Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions.Nature557, 696–700 (2018)..

Wang, W. Y. et al. Hot electron-based near-infrared photodetection using bilayer MoS2.Nano Lett.15, 7440–7444 (2015)..

Jariwala, D. et al. Near-unity absorption in van der waals semiconductors for ultrathin optoelectronics.Nano Lett.16, 5482–5487 (2016)..

Wong, J. et al.High photovoltaic quantum efficiency in ultrathin van der Waals heterostructures.ACS Nano11, 7230–7240 (2017)..

Kwon, G. et al. Interaction- and defect-free van der Waals contacts between metals and two-dimensional semiconductors.Nat. Electron.5, 241–247 (2022)..

Allain, A. et al. Electrical contacts to two-dimensional semiconductors.Nat. Mater.14, 1195–1205 (2015)..

Yang, K., Liu, T. Y.&Zhang, X. D. Bandgap engineering and near-infrared-Ⅱ optical properties of monolayer MoS2: a first-principle study.Front. Chem.9, 700250 (2021)..

Zhang, Y. B. et al. Ultrathin polarization-insensitive wide-angle broadband near-perfect absorber in the visible regime based on few-layer MoS2films.Appl. Phys. Lett.111, 111109 (2017)..

Wang, J. L. et al. Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope.Sci. Adv.7, eabf8744 (2021)..

Zhu, Y. S. et al. Planar hot-electron photodetector utilizing high refractive index MoS2in fabry-pérot perfect absorber.Nanotechnology31, 274001 (2020)..

Kim, C. et al. Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides.ACS Nano11, 1588–1596 (2017)..

Zhang, Y. W. et al. Photothermoelectric and photovoltaic effects both present in MoS2.Sci. Rep.5, 7938 (2015)..

Sobhani, A. et al. Narrowband photodetection in the near-infrared with a plasmon-induced hot electron device.Nat. Commun.4, 1643 (2013)..

Vogel, N., Zieleniecki, J.&Köper, I. As flat as it gets: ultrasmooth surfaces from template-stripping procedures.Nanoscale4, 3820–3832 (2012)..

Liu, X. L. et al. Highly efficient broadband photodetectors based on lithography-free Au/Bi2O2Se/Au heterostructures.Nanoscale11, 20707–20714 (2019)..

Guo, J. X. et al. Near-infrared photodetector based on few-layer MoS2with sensitivity enhanced by localized surface plasmon resonance.Appl. Surf. Sci.483, 1037–1043 (2019)..

Yuan, J. et al. Wafer-scale fabrication of two-dimensional PtS2/PtSe2heterojunctions for efficient and broad band photodetection.ACS Appl. Mater. Interfaces10, 40614–40622 (2018)..

Yang, H. et al. Near-infrared photoelectric properties of multilayer Bi2O2Se nanofilms.Nanoscale Res. Lett.14, 371 (2019)..

Dan, Z. Y. et al. Type-Ⅱ Bi2O2Se/MoTe2van der Waals heterostructure photodetectors with high gate-modulation photovoltaic performance.ACS Appl. Mater. Interfaces15, 18101–18113 (2023)..

Xu, H. Y. et al. Flexible SnSe photodetectors with ultrabroad spectral response up to 10.6 μm enabled by photobolometric effect.ACS Appl. Mater. Interfaces12, 35250–35258 (2020)..

Ma, W. L. et al. Bandgap-independent photoconductive detection in two-dimensional Sb2Te3.Commun. Mater.3, 68 (2022)..

Zhao, X. X. et al. Van der Waals epitaxy of ultrathin crystalline PbTe nanosheets with high near-infrared photoelectric response.Nano Res.14, 1955–1960 (2021)..

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Engineering electrode interfaces for telecom-band photodetection in MoS2/Au heterostructures via sub-band light absorption

DOI：10.1038/s41377-023-01308-x

摘要

Abstract

关键词

Keywords

references

Engineering electrode interfaces for telecom-band photodetection in MoS₂/Au heterostructures via sub-band light absorption