Highly-efficient (&gt; 70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors

Dae-Myeong Geum; Jinha Lim; Junho Jang; Seungyeop Ahn; SeongKwang Kim; Joonsup Shim; Bong Ho Kim; Juhyuk Park; Woo Jin Baek; Jaeyong Jeong; SangHyeon Kim

doi:10.1038/s41377-024-01652-6

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Highly-efficient (> 70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors

Original Articles

- Highly-efficient (> 70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors
- Light: Science & Applications Vol. 13, Issue 12, Pages: 3224-3235(2024)
- Affiliations：
  
  1.School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
  2.Department of Electrical and Computer Engineering, Inha University, Incheon 22212, Republic of Korea
- Author bio：
  
  SangHyeon Kim (shkim.ee@kaist.ac.kr)
- Funds：
- DOI：10.1038/s41377-024-01652-6
  CLC：
- Published：31 December 2024，
  
  Published Online：15 November 2024，
  
  Received：28 March 2024，
  
  Revised：05 September 2024，
  
  Accepted：20 September 2024
- Accepted：
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Geum, D. M. et al. Highly-efficient (>70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors. Light: Science & Applications, 13, 3224-3235 (2024).
DOI：

Geum, D. M. et al. Highly-efficient (>70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors. Light: Science & Applications, 13, 3224-3235 (2024). DOI： 10.1038/s41377-024-01652-6.

摘要

Abstract

This paper demonstrates the novel approach of sub-micron-thick InGaAs broadband photodetectors (PDs) designed for high-resolution imaging from the visible to short-wavelength infrared (SWIR) spectrum. Conventional approaches encounter challenges such as low resolution and crosstalk issues caused by a thick absorption layer (AL). Therefore

we propose a guided-mode resonance (GMR) structure to enhance the quantum efficiency (QE) of the InGaAs PDs in the SWIR region with only sub-micron-thick AL. The TiO

/Au-based GMR structure compensates for the reduced AL thickness

achieving a remarkably high QE (

70%) from 400 to 1700 nm with only a 0.98 μm AL InGaAs PD (defined as 1 μm AL PD). This represents a reduction in thickness by at least 2.5 times compared to previous results while maintaining a high QE. Furthermore

the rapid transit time is highly expected to result in decreased electrical crosstalk. The effectiveness of the GMR structure is evident in its ability to sustain QE even with a reduced AL thickness

simultaneously enhancing the transit time. This breakthrough offers a viable solution for high-resolution and low-noise broadband image sensors.

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references

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Highly-efficient (> 70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors

DOI：10.1038/s41377-024-01652-6

摘要

Abstract

关键词

Keywords

references