1.Key Laboratory of Nanodevices and Applications, Suzhou Institute of NanoTech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
2.School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
3.Accelink Technologies Co., Ltd, Wuhan 430205, China
4.State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics Fine Mechanics and Physics (CIOMP), CAS, Changchun 130033, China
Qian Sun (qsun2011@sinano.ac.cn)
Jianping Liu (jpliu2010@sinano.ac.cn)
纸质出版日期:2018,
网络出版日期:2018-06-13,
收稿日期:2017-08-22,
修回日期:2018-01-10,
录用日期:2018-02-26
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Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si[J]. LSA, 2018,7(4):26-31.
Sun, Y. et al. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si. Light: Science & Applications, 7, 26-31 (2018).
Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si[J]. LSA, 2018,7(4):26-31. DOI: 10.1038/s41377-018-0008-y.
Sun, Y. et al. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si. Light: Science & Applications, 7, 26-31 (2018). DOI: 10.1038/s41377-018-0008-y.
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