Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering

Changkui Hu; Qiong Chen; Fengxiang Chen; T. H. Gfroerer; M. W. Wanlass; Yong Zhang

doi:10.1038/s41377-018-0016-y

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Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering

Original Articles

- Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering
- Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering
- LSA 2018年7卷第4期页码：165-172
- Affiliations：
  
  1.University of North Carolina at Charlotte, Charlotte, NC 28223, USA
  2.Wuhan University of Technology, Wuhan, Hubei 430070, China
  3.Davidson College, Davidson, NC 28035, USA
  4.National Renewable Energy Laboratory, Golden, CO 80401, USA
- Author bio：
  
  Yong Zhang (yong.zhang@uncc.edu)
- Funds：
- DOI：10.1038/s41377-018-0016-y
  中图分类号：
- 纸质出版日期：2018，
  
  网络出版日期：2018-06-20，
  
  收稿日期：2018-01-12，
  
  修回日期：2018-03-23，
  
  录用日期：2018-03-26
- Accepted：
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Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering[J]. LSA, 2018,7(4):165-172.

Hu, C. K. et al. Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering. Light: Science & Applications, 4, 165-172 (2018).
Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering[J]. LSA, 2018,7(4):165-172. DOI： 10.1038/s41377-018-0016-y.

Hu, C. K. et al. Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering. Light: Science & Applications, 4, 165-172 (2018). DOI： 10.1038/s41377-018-0016-y.

摘要

Abstract

Carrier diffusion is of paramount importance in many semiconductor devices

such as solar cells

photodetectors

and power electronics. Structural defects prevent such devices from reaching their full performance potential. Although a large carrier diffusion length indicates high material quality

it also implies increased carrier depletion by an individual extended defect (for instance

a dislocation) and obscures the spatial resolution of neighboring defects using optical techniques. For commonly utilized photoluminescence (PL) imaging

the spatial resolution is dictated by the diffusion length rather than by the laser spot size

no matter the spot is at or below the diffraction limit. Here

we show how Raman imaging of the LO phonon-plasmon-coupled mode can be used to recover the intrinsic spatial resolution of the optical system

and we demonstrate the effectiveness of the technique by imaging defects in GaAs with diffraction-limited optics

achieving a 10-fold improvement in resolution. Furthermore

by combining Raman and PL imaging

we can independently and simultaneously determine the spatial dependence of the electron density

hole density

radiative recombination rate

and non-radiative recombination rate near a dislocation-like defect

which has not been possible using other techniques.

关键词

Keywords

references

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