Doped, conductive SiO<sub>2</sub> nanoparticles for large microwave absorption

Michael Green; Zhanqiang Liu; Peng Xiang; Yan Liu; Minjie Zhou; Xinyu Tan; Fuqiang Huang; Lei Liu; Xiaobo Chen

doi:10.1038/s41377-018-0088-8

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Doped, conductive SiO₂ nanoparticles for large microwave absorption

Original Articles

- Doped, conductive SiO₂ nanoparticles for large microwave absorption
- Doped, conductive SiO₂ nanoparticles for large microwave absorption
- 光：科学与应用 2018年7卷第6期页码：857-865
- Affiliations：
  
  1.Department of Chemistry, University of Missouri, Kansas City, MO, 64110, USA
  2.State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
  3.College of Materials and Chemical Engineering, Hubei Provincial Collaborative Innovation Center for New Energy Microgrid, China Three Gorges University, Yichang, 443002, China
  4.College of Environment, Sichuan Agricultural University, Chengdu, Sichuan, 611130, China
  5.School of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, 414000, China
  6.State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
- Author bio：
  
  Xinyu Tan (tanxin@ctgu.edu.cn)
  Fuqiang Huang (huangfq@mail.sic.ac.cn)
  Xiaobo Chen (chenxiaobo@umkc.edu)
- Funds：
- DOI：10.1038/s41377-018-0088-8
  中图分类号：
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Michael Green, Zhanqiang Liu, Peng Xiang, 等. Doped, conductive SiO₂ nanoparticles for large microwave absorption[J]. 光：科学与应用, 2018,7(6):857-865.

Green, M. et al. Metasurface interferometry toward quantum sensors. Light: Science & Applications, 6, 857-865 (2018).
Michael Green, Zhanqiang Liu, Peng Xiang, 等. Doped, conductive SiO₂ nanoparticles for large microwave absorption[J]. 光：科学与应用, 2018,7(6):857-865. DOI： 10.1038/s41377-018-0088-8.

Green, M. et al. Metasurface interferometry toward quantum sensors. Light: Science & Applications, 6, 857-865 (2018). DOI： 10.1038/s41377-018-0088-8.

摘要

Abstract

Although many materials have been studied for the purpose of microwave absorption, SiO,2, has never been reported as a good candidate. In this study, we present for the first time that doped, microwave conductive SiO,2, nanoparticles can possess an excellent microwave absorbing performance. A large microwave reflection loss (RL) of −55.09 dB can be obtained. The large microwave absorption originates mainly from electrical relaxation rather than the magnetic relaxation of the incoming microwave field. The electrical relaxation is attributed to a large electrical conductivity that is enabled by the incorporation of heterogeneous (N, C and Cl) atoms. The removal of the magnetic susceptibility only results in a negligible influence of the microwave absorption. In contrast, the removal of the heterogeneous atoms leads to a large decrease in the electrical conductivity and microwave absorption performance. Meanwhile, the microwave absorption characteristics can be largely adjusted with a change of the thickness, which provides large flexibility for various microwave absorption applications.

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Doped, conductive SiO2 nanoparticles for large microwave absorption

Doped, conductive SiO2 nanoparticles for large microwave absorption

DOI：10.1038/s41377-018-0088-8

摘要

Abstract

关键词

Keywords

references

Doped, conductive SiO₂ nanoparticles for large microwave absorption

Doped, conductive SiO₂ nanoparticles for large microwave absorption