Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling

Li Chen; Wei Lin; Huiqiong Wang; Jinchai Li; Junyong Kang

doi:10.1038/s41377-020-00342-3

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Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling

Letters

- Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling
- Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling
- LSA 2020年9卷第4期页码：874-881
- Affiliations：
  
  1.Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Provincial Key Laboratory of Semiconductor Materials and Applications; Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices; Department of Physics, Xiamen University, 361005 Xiamen, China
  2.Present address: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 315201 Ningbo, Zhejiang, China
- Author bio：
  
  Wei Lin (linwei@xmu.edu.cn)
  Junyong Kang (jykang@xmu.edu.cn)
- Funds：
- DOI：10.1038/s41377-020-00342-3
  中图分类号：
- 纸质出版日期：2020，
  
  网络出版日期：2020-06-18，
  
  收稿日期：2019-10-21，
  
  修回日期：2020-05-29，
  
  录用日期：2020-06-04
- Accepted：
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Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling[J]. LSA, 2020,9(4):874-881.

Chen, L. et al. Reversing abnormal hole localization in high-Alcontent AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling. Light: Science & Applications, 9, 874-881 (2019).
Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling[J]. LSA, 2020,9(4):874-881. DOI： 10.1038/s41377-020-00342-3.

Chen, L. et al. Reversing abnormal hole localization in high-Alcontent AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling. Light: Science & Applications, 9, 874-881 (2019). DOI： 10.1038/s41377-020-00342-3.

摘要

Abstract

AlGaN has attracted considerable interest for ultraviolet (UV) applications. With the development of UV optoelectronic devices

abnormal carrier confinement behaviour has been observed for

-plane-oriented AlGaN quantum wells (QWs) with high Al content. Because of the dispersive crystal field split-off hole band (CH band) composed of

orbitals

the abnormal confinement becomes the limiting factor for efficient UV light emission. This observation differs from the widely accepted concept that confinement of carriers at the lowest quantum level is more pronounced than that at higher quantum levels

which has been an established conclusion for conventional continuous potential wells. In particular

orientational

orbitals are sensitive to the confinement direction in line with the conducting direction

which affects the orbital intercoupling. In this work

models of Al

0.75

0.25

N/AlN

QWs constructed with variable lattice orientations were used to investigate the orbital intercoupling among atoms between the well and barrier regions. Orbital engineering of QWs was implemented by changing the orbital state confinement

with the well plane inclined from 0° to 90° at a step of 30° (referred to the

plane). The barrier potential and transition rate at the band edge were enhanced through this orbital engineering. The concept of orbital engineering was also demonstrated through the construction of inclined QW planes on semi- and nonpolar planes implemented in microrods with pyramid-shaped tops. The higher emission intensity from the QWs on the nonpolar plane compared with those on the polar plane was confirmed via localized cathodoluminescence (CL) maps.

关键词

Keywords

references

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