1.The Guo Photonics Laboratory, State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033 Changchun, China
2.University of Chinese Academy of Sciences, 100049 Beijing, China
3.State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 130012 Changchun, China
4.State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033 Changchun, China
5.The Institute of Optics, University of Rochester, Rochester, NY 14627, USA
Qingfeng Dong (qfdong@jlu.edu.cn)
Weili Yu (weili.yu@ciomp.ac.cn)
Chunlei Guo (guo@optics.rochester.edu)
纸质出版日期:2020,
网络出版日期:2020-06-30,
收稿日期:2020-02-13,
修回日期:2020-06-09,
录用日期:2020-06-15
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Modulating the optical and electrical properties of MAPbBr3 single crystals via voltage regulation engineering and application in memristors[J]. LSA, 2020,9(4):1092-1102.
Xing, J. et al. Modulating the optical and electrical properties of MAPbBr3 single crystals via voltage regulation engineering and application in memristors. Light: Science & Applications, 9, 1092-1102 (2020).
Modulating the optical and electrical properties of MAPbBr3 single crystals via voltage regulation engineering and application in memristors[J]. LSA, 2020,9(4):1092-1102. DOI: 10.1038/s41377-020-00349-w.
Xing, J. et al. Modulating the optical and electrical properties of MAPbBr3 single crystals via voltage regulation engineering and application in memristors. Light: Science & Applications, 9, 1092-1102 (2020). DOI: 10.1038/s41377-020-00349-w.
Defect density is one of the most significant characteristics of perovskite single crystals (PSCs) that determines their optical and electrical properties
but few strategies are available to tune this property. Here
we demonstrate that voltage regulation is an efficient method to tune defect density
as well as the optical and electrical properties of PSCs. A three-step carrier transport model of MAPbBr
3
PSCs is proposed to explore the defect regulation mechanism and carrier transport dynamics via an applied bias. Dynamic and steady-state photoluminescence measurements subsequently show that the surface defect density
average carrier lifetime
and photoluminescence intensity can be efficiently tuned by the applied bias. In particular
when the regulation voltage is 20 V (electrical poling intensity is 0.167 V μm
−1
)
the surface defect density of MAPbBr
3
PSCs is reduced by 24.27%
the carrier lifetime is prolonged by 32.04%
and the PL intensity is increased by 112.96%. Furthermore
a voltage-
regulated MAPbBr
3
PSC memristor device shows an adjustable multiresistance
weak ion migration effect and greatly enhanced device stability. Voltage regulation is a promising engineering technique for developing advanced perovskite optoelectronic devices.
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