Black phosphorus-based van der Waals heterostructures for mid-infrared light-emission applications

Xinrong Zong; Huamin Hu; Gang Ouyang; Jingwei Wang; Run Shi; Le Zhang; Qingsheng Zeng; Chao Zhu; Shouheng Chen; Chun Cheng; Bing Wang; Han Zhang; Zheng Liu; Wei Huang; Taihong Wang; Lin Wang; Xiaolong Chen

doi:10.1038/s41377-020-00356-x

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Black phosphorus-based van der Waals heterostructures for mid-infrared light-emission applications

Original Articles

- Black phosphorus-based van der Waals heterostructures for mid-infrared light-emission applications
- Black phosphorus-based van der Waals heterostructures for mid-infrared light-emission applications
- LSA 2020年9卷第4期页码：1122-1129
- Affiliations：
  
  1.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 518055 Shenzhen, China
  2.Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, 211816 Nanjing, China
  3.Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, and Key Laboratory for Matter Microstructure and Function of Hunan Province, Hunan Normal University, 410081 Changsha, China
  4.Department of Materials Science and Engineering, Southern University of Science and Technology, 518055 Shenzhen, China
  5.Center for Programmable Materials School of Materials Science and Engineering Nanyang Technological University, Singapore 639798, Singapore
  6.Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, 518060 Shenzhen, China
  7.Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University (NPU), 127 West Youyi Road, 710072 Xi'an, China
- Author bio：
  
  Taihong Wang (wangth@sustech.edu.cn)
  Lin Wang (iamlwang@njtech.edu.cn)
  Xiaolong Chen (chenxl@sustech.edu.cn)
- Funds：
- DOI：10.1038/s41377-020-00356-x
  中图分类号：
- 纸质出版日期：2020，
  
  网络出版日期：2020-07-02，
  
  收稿日期：2020-02-10，
  
  修回日期：2020-06-14，
  
  录用日期：2020-06-18
- Accepted：
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Black phosphorus-based van der Waals heterostructures for mid-infrared light-emission applications[J]. LSA, 2020,9(4):1122-1129.

Zong, X. R. et al. Black phosphorus-based van der Waals heterostructures for mid-infrared light-emission applications. Light: Science & Applications, 9, 1122-1129 (2020).
Black phosphorus-based van der Waals heterostructures for mid-infrared light-emission applications[J]. LSA, 2020,9(4):1122-1129. DOI： 10.1038/s41377-020-00356-x.

Zong, X. R. et al. Black phosphorus-based van der Waals heterostructures for mid-infrared light-emission applications. Light: Science & Applications, 9, 1122-1129 (2020). DOI： 10.1038/s41377-020-00356-x.

摘要

Abstract

Mid-infrared (MIR) light-emitting device

s play a key role in optical communications

thermal imaging

and material analysis applications. Two-dimensional (2D) materials offer a promising direction for next-generation MIR devices owing to their exotic optical properties

as well as the ultimate thickness limit. More importantly

van der Waals heterostructures—combining the best of various 2D materials at an artificial atomic level—provide many new possibilities for constructing MIR light-emitting devices of large tuneability and high integration. Here

we introduce a simple but novel van der Waals heterostructure for MIR light-emission applications built from thin-film BP and transition metal dichalcogenides (TMDCs)

in which BP acts as an MIR light-emission layer. For BP–WSe

heterostructures

an enhancement of ~200% in the photoluminescence intensities in the MIR region is observed

demonstrating highly efficient energy transfer in this heterostructure with type-Ⅰ band alignment. For BP–MoS

heterostructures

a room temperature MIR light-emitting diode (LED) is enabled through the formation of a vertical PN heterojunction at the interface. Our work reveals that the BP–TMDC heterostructure with efficient light emission in the MIR range

either optically or electrically activated

provides a promising platform for infrared light property studies and applications.

关键词

Keywords

references

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