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Monitoring the charge-transfer process in a Nd-doped semiconductor based on photoluminescence and SERS technology
Original Articles
    • Monitoring the charge-transfer process in a Nd-doped semiconductor based on photoluminescence and SERS technology

    • Monitoring the charge-transfer process in a Nd-doped semiconductor based on photoluminescence and SERS technology

    • LSA   2020年9卷第4期 页码:1143-1149
    • DOI:10.1038/s41377-020-00361-0    

      中图分类号:
    • 纸质出版日期:2020,

      网络出版日期:2020-07-10,

      收稿日期:2020-01-13,

      修回日期:2020-06-06,

      录用日期:2020-06-27

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  • Monitoring the charge-transfer process in a Nd-doped semiconductor based on photoluminescence and SERS technology[J]. LSA, 2020,9(4):1143-1149. DOI: 10.1038/s41377-020-00361-0.

    Yang, S. et al. Monitoring the charge-transfer process in a Nd-doped semiconductor based on photoluminescence and SERS technology. Light: Science & Applications, 9, 1143-1149 (2020). DOI: 10.1038/s41377-020-00361-0.

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