Single-photon emission from isolated monolayer islands of InGaN

Xiaoxiao Sun; Ping Wang; Tao Wang; Ling Chen; Zhaoying Chen; Kang Gao; Tomoyuki Aoki; Mo Li; Jian Zhang; Tobias Schulz; Martin Albrecht; Weikun Ge; Yasuhiko Arakawa; Bo Shen; Mark Holmes; Xinqiang Wang

doi:10.1038/s41377-020-00393-6

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Single-photon emission from isolated monolayer islands of InGaN

Original Articles

- Single-photon emission from isolated monolayer islands of InGaN
- Single-photon emission from isolated monolayer islands of InGaN
- LSA 2020年9卷第5期页码：1518-1524
- Affiliations：
  
  1.State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, 100871 Beijing, China
  2.Collaborative Innovation Center of Quantum Matter, 100871 Beijing, China
  3.Electron Microscopy Laboratory, School of Physics, Peking University, 100871 Beijing, China
  4.Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
  5.School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
  6.Leibniz-Institute for Crystal Growth, Max-Born-Straße 2, 12489 Berlin, Germany
  7.Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
- Author bio：
  
  Mark Holmes (holmes@iis.u-tokyo.ac.jp)
  Xinqiang Wang (wangshi@pku.edu.cn)
- Funds：
- DOI：10.1038/s41377-020-00393-6
  中图分类号：
- 纸质出版日期：2020，
  
  网络出版日期：2020-09-09，
  
  收稿日期：2020-06-15，
  
  修回日期：2020-08-02，
  
  录用日期：2020-08-17
- Accepted：
Scan QR Code
Single-photon emission from isolated monolayer islands of InGaN[J]. LSA, 2020,9(5):1518-1524.

Sun, X. X. et al. Single-photon emission from isolated monolayer islands of InGaN. Light: Science & Applications, 9, 1518-1524 (2020).
Single-photon emission from isolated monolayer islands of InGaN[J]. LSA, 2020,9(5):1518-1524. DOI： 10.1038/s41377-020-00393-6.

Sun, X. X. et al. Single-photon emission from isolated monolayer islands of InGaN. Light: Science & Applications, 9, 1518-1524 (2020). DOI： 10.1038/s41377-020-00393-6.

摘要

Abstract

We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures. Detailed optical analysis of the characteristic emission spectrum from the monolayer islands is performed

and the main transmission is shown to act as a bright

stable

and fast single-photon emitter with a wavelength of ~400 nm.

关键词

Keywords

references

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