1.Department of Physics, National University of Defense Technology, 410073 Changsha, China
2.College of Advanced Interdisciplinary Studies, National University of Defense Technology, 410073 Changsha, China
3.Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, 410083 Changsha, China
4.Quantum Design China (Beijing) Co., Ltd, 100015 Beijing, China
5.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
6.School of Physical Sciences, University of Chinese Academy of Sciences, 100049 Beijing, China
7.Songshan Lake Materials Laboratory, Dongguan 523808 Guangdong, China
8.Chongqing 2D Materials Institute, Liangjiang New Area, 400714 Chongqing, China
9.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016 Shenyang, China
10.School of Material Science and Engineering, University of Science and Technology of China, 230026 Anhui, China
11.State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, 030006 Taiyuan, China
12.Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
Jiayu Dai (jydai@nudt.edu.cn)
Mengjian Zhu (zhumengjian11@nudt.edu.cn)
纸质出版日期:2020,
网络出版日期:2020-10-13,
收稿日期:2020-03-25,
修回日期:2020-09-27,
录用日期:2020-09-28
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Light-induced irreversible structural phase transition in trilayer graphene[J]. LSA, 2020,9(6):1857-1867.
Zhang, J. Y. et al. Light-induced irreversible structural phase transition in trilayer graphene. Light: Science & Applications, 9, 1857-1867 (2020).
Light-induced irreversible structural phase transition in trilayer graphene[J]. LSA, 2020,9(6):1857-1867. DOI: 10.1038/s41377-020-00412-6.
Zhang, J. Y. et al. Light-induced irreversible structural phase transition in trilayer graphene. Light: Science & Applications, 9, 1857-1867 (2020). DOI: 10.1038/s41377-020-00412-6.
A crystal structure has a profound influence on the physical properties of the corresponding material. By synthesizing crystals with particular symmetries
one can strongly tune their properties
even for the same chemical configuration (compare graphite and diamond
for instance). Even more interesting opportunities arise when the structural phases of crystals can be changed dynamically through external stimulations. Such abilities
though rare
lead to a number of exciting phenomena
such as phase-change memory effects. In the case of trilayer graphene
there are two common stacking configurations (ABA and ABC) that have distinct electronic band structures and exhibit very different behaviors. Domain walls exist in the trilayer graphene with both stacking orders
showing fascinating new physics such as the quantum valley Hall effect. Extensive efforts have been dedicated to the phase engineering of trilayer graphene. However
the manipulation of domain walls to achieve precise control of local structures and properties remains a considerable challenge. Here
we experimentally demonstrate that we can switch from one structural phase to another by laser irradiation
creating domains of different shapes in trilayer graphene. The ability to control the position and orientation of the domain walls leads to fine control of the local structural phases and properties of graphene
offering a simple but effective approach to create artificial two-dimensional materials with designed atomic structures and electronic and optical properties.
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