1.Department of Physics and Astronomy and London Centre for Nanotechnology, University College London, London WC1E 6BT, UK
2.Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford OX1 3TA, UK
3.Dipartimento di Fisica, Università degli Studi di Pavia, Via A. Bassi, 6, Pavia 27100, Italy
4.CNR-ISMN, Istituto per lo Studio dei Materiali Nanostrutturati, Consiglio Nazionale delle Ricerche, Via P. Gobetti 101, Bologna 40129, Italy
Harry L. Anderson (harry.anderson@chem.ox.ac.uk)
Franco Cacialli (f.cacialli@ucl.ac.uk)
纸质出版日期:2021,
网络出版日期:2021-01-21,
收稿日期:2020-04-15,
修回日期:2020-12-07,
录用日期:2020-12-15
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Towards efficient near-infrared fluorescent organic light-emitting diodes[J]. LSA, 2021,10(2):166-175.
Minotto, A. et al. Towards efficient near-infrared fluorescent organic light-emitting diodes. Light: Science & Applications, 10, 166-175 (2021).
Towards efficient near-infrared fluorescent organic light-emitting diodes[J]. LSA, 2021,10(2):166-175. DOI: 10.1038/s41377-020-00456-8.
Minotto, A. et al. Towards efficient near-infrared fluorescent organic light-emitting diodes. Light: Science & Applications, 10, 166-175 (2021). DOI: 10.1038/s41377-020-00456-8.
The energy gap law (
E
G
-law) and aggregation quenching are the main limitations to overcome in the design of near-infrared (NIR) organic emitters. Here
we achieve unprecedented results by synergistically addressing both of these limitations. First
we propose porphyrin oligomers with increasing length to attenuate the effects of the
E
G
-law by suppressing the non-radiative rate growth
and to increase the radiative rate via enhancement of the oscillator strength. Second
we design side chains to suppress aggregation quenching. We find that the logarithmic rate of variation in the non-radiative rate vs.
E
G
is suppressed by an order of magnitude with respect to previous studies
and we complement this breakthrough by demonstrating organic light-emitting diodes with an average external quantum efficiency of ~1.1%
which is very promising for a heavy-metal-free 850 nm emitter. We also present a novel quantitative model of the internal quantum efficiency for active layers supporting triplet-to-singlet conversion. These results provide a general strategy for designing high-luminance NIR emitters.
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