1.State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
2.Ningbo Research Institute, Zhejiang University, 315100 Ningbo, China
3.Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, 211189 Nanjing, China
4.College of Information Science and Electronic Engineering, Zhejiang University, 310027 Hangzhou, Zhejiang, China
Daoxin Dai (dxdai@zju.edu.cn)
纸质出版日期:2020,
网络出版日期:2020-02-28,
收稿日期:2019-08-18,
修回日期:2020-01-26,
录用日期:2020-02-14
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High-performance silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm[J]. LSA, 2020,9(2):274-284.
Guo, J. S. et al. High-performance silicon−graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm. Light: Science & Applications, 9, 274-284 (2020).
High-performance silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm[J]. LSA, 2020,9(2):274-284. DOI: 10.1038/s41377-020-0263-6.
Guo, J. S. et al. High-performance silicon−graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm. Light: Science & Applications, 9, 274-284 (2020). DOI: 10.1038/s41377-020-0263-6.
Graphene has attracted much attention for the realization of high-speed photodetection for silicon photonics over a wide wavelength range. However
the reported fast graphene photodetectors mainly operate in the 1.55 μm wavelength band. In this work
we propose and realize high-performance waveguide photodetectors based on bolometric/photoconductive effects by introducing an ultrathin wide silicon-graphene hybrid plasmonic waveguide
which enables efficient light absorption in graphene at 1.55 μm and beyond. When operating at 2 μm
the present photodetector has a responsivity of ~70 mA/W and a setup-limited 3 dB bandwidth of > 20 GHz. When operating at 1.55 μm
the present photodetector also works very well with a broad 3 dB bandwidth of > 40 GHz (setup-limited) and a high responsivity of ~0.4 A/W even with a low bias voltage of -0.3 V. This work paves the way for achieving high-responsivity and high-speed silicon–graphene waveguide photodetection in the near/mid-infrared ranges
which has applications in optical communications
nonlinear photonics
and on-chip sensing.
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