High-performance position-sensitive detector based on the lateral photoelectrical effect of two-dimensional materials

Chang Hu; Xianjie Wang; Bo Song

doi:10.1038/s41377-020-0307-y

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High-performance position-sensitive detector based on the lateral photoelectrical effect of two-dimensional materials

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- High-performance position-sensitive detector based on the lateral photoelectrical effect of two-dimensional materials
- High-performance position-sensitive detector based on the lateral photoelectrical effect of two-dimensional materials
- LSA 2020年9卷第3期页码：554-562
- Affiliations：
  
  1.Department of Physics, Harbin Institute of Technology, 150001 Harbin, China
  2.National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, 150001 Harbin, China
- Author bio：
  
  Bo Song (songbo@hit.edu.cn)
- Funds：
- DOI：10.1038/s41377-020-0307-y
  中图分类号：
- 纸质出版日期：2020，
  
  网络出版日期：2020-05-20，
  
  收稿日期：2020-01-11，
  
  修回日期：2020-03-18，
  
  录用日期：2020-03-31
- Accepted：
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High-performance position-sensitive detector based on the lateral photoelectrical effect of two-dimensional materials[J]. LSA, 2020,9(3):554-562.

Hu, C., Wang, X. J. & Song, B. High-performance position-sensitive detector based on the lateral photoelectrical effect of two-dimensional materials. Light: Science & Applications, 9, 554-562 (2020).
High-performance position-sensitive detector based on the lateral photoelectrical effect of two-dimensional materials[J]. LSA, 2020,9(3):554-562. DOI： 10.1038/s41377-020-0307-y.

Hu, C., Wang, X. J. & Song, B. High-performance position-sensitive detector based on the lateral photoelectrical effect of two-dimensional materials. Light: Science & Applications, 9, 554-562 (2020). DOI： 10.1038/s41377-020-0307-y.

摘要

Abstract

Two-dimensional (2D) materials such as graphene and transition-metal chalcogenides have been extensively studied because of their superior electronic and optical properties. Recently

2D materials have shown great practical application in position-sensitive detectors (PSDs)

originating from the lateral photoelectrical effect of the materials or junctions. The high position sensitivity and ultrafast photoresponse of PSDs based on 2D materials

especially compatibility with Si technology

may enable diverse optoelectronic applications. In this review

recent studies of PSDs based on 2D materials are summarized

providing a promising route for high-performance PSDs.

关键词

Keywords

references

Henry, J.&Livingstone, J. Thin-film amorphous silicon position-sensitive detectors.Adv. Mater.13, 1023–1026 (2001)..

Boeringer, D. W.&Tsu, R. Lateral photovoltaic effect in porous silicon.Appl. Phys. Lett.65, 2332–2334 (1994)..

Jin, K. J. et al. Dember effect induced photovoltage in perovskitep-nheterojunctions.Appl. Phys. Lett.91, 081906 (2007)..

Zhang, B., Du, L.&Wang, H. Bias-assisted improved lateral photovoltaic effect observed in Cu2O nano-films.Opt. Express22, 1661–1666 (2014)..

Qiao, S. et al. Large lateral photovoltage observed in MoS2thickness-modulated ITO/MoS2/p-Si heterojunctions.ACS Appl. Mater. Interfaces9, 18377–18387 (2017)..

Wang, W. H. et al. High-performance position-sensitive detector based on graphene–silicon heterojunction.Optica5, 27–31 (2018)..

Vieira, M. Speed photodetectors based on amorphous and microcrystalline silicon p–i–n devices.Appl. Phys. Lett.70, 220–222 (1997)..

Levine, B. F. et al. Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate.Appl. Phys. Lett.49, 1537–1539 (1986)..

Xiao, S. Q. et al. The Co-film-thickness dependent lateral photoeffect in Co–SiO2–Si metal-oxide-semiconductor structures.Opt. Express16, 3798–3806 (2008)..

Yu, C. Q., Wang, H.&Xia, Y. X. Giant lateral photovoltaic effect observed in TiO2dusted metal-semiconductor structure of Ti/TiO2/Si.Appl. Phys. Lett.95, 141112 (2009)..

Liu, S. et al. Lateral photovoltaic effect observed in nano Au film covered two-dimensional colloidal crystals.Appl. Phys. Lett.104, 111110 (2014)..

Liu, S., Xie, X.&Wang, H. Lateral photovoltaic effect and electron transport observed in Cr nano-film.Opt. Express22, 11627–11632 (2014)..

Yu, C. Q.&Wang, H. Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures.Appl. Phys. Lett.96, 171102 (2010)..

Qiao, S. et al. Large lateral photovoltaic effect in a-Si: H/c-Si p-i-n structure with the aid of bias voltage.Appl. Phys. Express8, 122201 (2015)..

Lu, H. B. et al. Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Sip-njunctions.Appl. Phys. Lett.86, 241915 (2005)..

Zhao, K. et al. Transient lateral photovoltaic effect inp-nheterojunctions of La0.7Sr0.3MnO3and Si.Appl. Phys. Lett.88, 141914 (2006)..

Wang, X. J. et al. Self-powered ultraviolet vertical and lateral photovoltaic effect with fast-relaxation time in NdNiO3/Nb: SrTiO3heterojunctions.Appl. Phys. Lett.112, 122103 (2018)..

Gu, L. L.&Fan, Z. Y. Perovskite/organic-semiconductor heterojunctions for ultrasensitive photodetection.Light Sci. Appl.6, e17090 (2017)..

Xie, C. et al. Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions.Light Sci. Appl.6, e17023 (2017)..

Hu, W. et al. Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band.Light Sci. Appl.8, 106 (2019)..

Yang, T. F. et al. Ultrahigh-performance optoelectronics demonstrated in ultrathin perovskite-based vertical semiconductor heterostructures.ACS Nano13, 7996–8003 (2019)..

Zhang, Q. et al. Solution-processed graphene quantum dot deep-UV photodetectors.ACS Nano9, 1561–1570 (2015)..

Xiao, P. et al. Solution-processed 3D RGO-MoS2/pyramid Si heterojunction for ultrahigh detectivity and ultra-broadband photodetection.Adv. Mater.30, 1801729 (2018)..

Wu, F. et al. High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region.Nat. Commun.10, 4663 (2019)..

Wang, W. H. et al. Interfacial amplification for graphene-based position-sensitive-detectors.Light Sci. Appl.6, e17113 (2017)..

Hu, C. et al. Origin of the ultrafast response ofthe lateral photovoltaic effect in amorphous MoS2/Si junctions.ACS Appl. Mater. Interfaces9, 18362–18368 (2017)..

Shan, H. Y. et al. Direct observation of ultrafast plasmonic hot electron transfer in the strong coupling regime.Light Sci. Appl.8, 9 (2019)..

Zhu, L. X. et al. Angle-selective perfect absorption with two-dimensional materials.Light Sci. Appl.5, e16052 (2016)..

Zheng, Z. B. et al. Tailoring of electromagnetic field localizations by two-dimensional graphene nanostructures.Light Sci. Appl.6, e17057 (2017)..

Zhao, X. N. et al. Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory.J. Mater. Chem. C6, 7195–7200 (2018)..

Radisavljevic, B. et al. Single-layer MoS2transistors.Nat. Nanotechnol.6, 147–150 (2011)..

Late, D. J. et al. Hysteresis in single-layer MoS2field effect transistors.ACS Nano6, 5635–5641 (2012)..

Xiang, Q. J., Yu, J. G.&Jaroniec, M. Synergetic effect of MoS2and graphene as cocatalysts for enhanced photocatalytic H2production activity of TiO2nanoparticles.J. Am. Chem. Soc.134, 6575–6578 (2012)..

Zhao, X. N. et al. Photocatalytic reduction of graphene oxide–TiO2nanocomposites for improving resistive-switching memory behaviors.Small14, 1801325 (2018)..

He, Q. Y. et al. Fabrication of flexible MoS2thin-film transistor arrays for practical gas-sensing applications.Small8, 2994–2999 (2012)..

Wi, S. et al. Enhancement of photovoltaic response in multilayer MoS2induced by plasma doping.ACS Nano8, 5270–5281 (2014)..

Tsai, M. L. et al. Monolayer MoS2heterojunction solar cells.ACS Nano8, 8317–8322 (2014)..

Cakmakyapan, S. et al. Gold-patched graphene nano-stripes for high-responsivity and ultrafast photodetection from the visible to infrared regime.Light Sci. Appl.7, 20 (2018)..

Javadi, M., Gholami, M.&Abdi, Y. IR position-sensitive detectors based on double-junction asymmetric TiO2/MoS2/reduced graphene-oxide sandwiches.J. Mater. Chem. C6, 8444–8452 (2018)..

Hao, L. Z. et al. Large lateral photovoltaic effect in MoS2/GaAs heterojunction.Nanoscale Res. Lett.12, 562 (2017)..

Wang, X. J. et al. Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction.Appl. Phys. Lett.109, 023502 (2016)..

Zhang, Y. et al. Ultrahigh position sensitivity and fast optical relaxation time of lateral photovoltaic effect in Sb2Se3/p-Si junctions.Opt. Express26, 34214–34223 (2018)..

Cong, R. D. et al. Ultrahigh, ultrafast, and self-powered visible-near-infrared optical position-sensitive detector based on a CVD-prepared vertically standing few-layer MoS2/Si heterojunction.Adv. Sci.5, 1700502 (2018)..

Qiao, S. et al. Laser-induced photoresistance effect in Si-based vertical standing MoS2nanoplate heterojunctions for self-powered high performance broadband photodetection.J. Mater. Chem. C7, 10642–10651 (2019)..

Liu, K. Y. et al. Graphene-based infrared position-sensitive detector for precise measurements and high-speed trajectory tracking.Nano Lett.19, 8132–8137 (2019)..

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