Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures

Ying Jiang; Shula Chen; Weihao Zheng; Biyuan Zheng; Anlian Pan

doi:10.1038/s41377-021-00500-1

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Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures

Reviews

- Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures
- Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures
- LSA 2021年10卷第5期页码：720-748
- Affiliations：
  
  1.Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and College of Materials Science and Engineering, Hunan University, Changsha, China
  2.Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China
- Author bio：
  
  Anlian Pan (anlian.pan@hnu.edu.cn)
- Funds：
- DOI：10.1038/s41377-021-00500-1
  中图分类号：
- 纸质出版日期：2021-05-31，
  
  网络出版日期：2021-04-02，
  
  收稿日期：2020-10-21，
  
  修回日期：2021-02-08，
  
  录用日期：2021-02-24
- Accepted：
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Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures[J]. LSA, 2021,10(5):720-748.

Jiang, Y. et al. Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures. Light: Science & Applications, 10, 720-748 (2021).
Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures[J]. LSA, 2021,10(5):720-748. DOI： 10.1038/s41377-021-00500-1.

Jiang, Y. et al. Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures. Light: Science & Applications, 10, 720-748 (2021). DOI： 10.1038/s41377-021-00500-1.

摘要

Abstract

Van der Waals (vdW) heterostructures based on transition metal dichalcogenides (TMDs) generally possess a type-Ⅱ band alignment that facilitates the formation of interlayer excitons between constituent monolayers. Manipulation of the interlayer excitons in TMD vdW heterostructures holds great promise for the development of excitonic integrated circuits that serve as the counterpart of electronic integrated circuits

which allows the photons and excitons to transform into each other and thus bridges optical communication and signal processing at the integrated circuit. As a consequence

numerous studies have been carried out to obtain deep insight into the physical properties of interlayer excitons

including revealing their ultrafast formation

long population recombination lifetimes

and intriguing spin-valley dynamics. These outstanding properties ensure interlayer excitons with good transport characteristics

and may pave the way for their potential applications in efficient excitonic devices based on TMD vdW heterostructures. At present

a systematic and comprehensive overview of interlayer exciton formation

relaxation

transport

and potential applications is still lacking. In this review

we give a comprehensive description and discussion of these frontier topics for interlayer excitons in TMD vdW heterostructures to provide valuable guidance for researchers in this field.

关键词

Keywords

references

Zeng, H. L.&Cui, X. D. An optical spectroscopic study on two-dimensional group-Ⅵ transition metal dichalcogenides.Chem. Soc. Rev.44, 2629-2642 (2015)..

Yu, H. Y. et al. Valley excitons in two-dimensional semiconductors.Natl Sci. Rev.2, 57-70 (2015)..

Xu, X. D. et al. Spin and pseudospins in layered transition metal dichalcogenides.Nat. Phys.10, 343-350 (2014)..

Mak, K. F., Xiao, D.&Shan, J. Light-valley interactions in 2D semiconductors.Nat. Photonics12, 451-460 (2018)..

Liu, Y. P. et al. Valleytronics in transition metal dichalcogenides materials.Nano Res.12, 2695-2711 (2019)..

Geim, A. K.&Grigorieva, I. V. Van der Waals heterostructures.Nature499, 419-425 (2013)..

Novoselov, K. S. et al. 2D materials and van der Waals heterostructures.Science353, aac9439 (2016)..

Liu, Y. et al. Van der Waals heterostructures and devices.Nat. Rev. Mater.1, 16042 (2016)..

Gong, C. et al. Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors.Appl. Phys. Lett.103, 053513 (2013)..

Kang, J. et al. Band offsets and heterostructures of two-dimensional semiconductors.Appl. Phys. Lett.102, 012111 (2013)..

Guo, Y. Z.&Robertson, J. Band engineering in transition metal dichalcogenides: stacked versus lateral heterostructures.Appl. Phys. Lett.108, 233104 (2016)..

Özçelik, V. O. et al. Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching.Phys. Rev. B94, 035125 (2016)..

Zhang, C. X. et al. Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures.2D Mater.4, 015026 (2017)..

Xu, K. et al. The role of Anderson's rule in determining electronic, optical and transport properties of transition metal dichalcogenide heterostructures.Phys. Chem. Chem. Phys.20, 30351-30364 (2018)..

Chiu, M. H. et al. Determination of band alignment in the single-layer MoS2/WSe2heterojunction.Nat. Commun.6, 7666 (2015)..

Hill, H. M. et al. Band alignment in MoS2/WS2transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy and spectroscopy.Nano Lett.16, 4831-4837 (2016)..

Wilson, N. R. et al. Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures.Sci. Adv.3, e1601832 (2017)..

Zhang, C. D. et al. Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2hetero-bilayers.Sci. Adv.3, e1601459 (2017)..

Quan, C. J. et al. Band alignment of MoTe2/MoS2nanocomposite films for enhanced nonlinear optical performance.Adv. Mater. Interfaces6, 1801733 (2019)..

Fang, H. et al. Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides.Proc. Natl Acad. Sci. USA111, 6198-6202 (2014)..

Chiu, M. H. et al. Spectroscopic signatures for interlayer coupling in MoS2-WSe2van der Waals stacking.ACS Nano8, 9649-9656 (2014)..

Rivera, P. et al. Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2heterostructures.Nat. Commun.6, 6242 (2015)..

Miller, B. et al. Long-lived direct and indirect interlayer excitons in van der Waals heterostructures.Nano Lett.17, 5229-5237 (2017)..

Baranowski, M. et al. Probing the interlayer exciton physics in a MoS2/MoSe2/MoS2van der Waals heterostructure.Nano Lett.17, 6360-6365 (2017)..

Nagler, P. et al. Giant magnetic splitting inducing near-unity valley polarization in van der Waals heterostructures.Nat. Commun.8, 1551 (2017)..

Kiemle, J. et al. Control of the orbital character of indirect excitons in MoS2/WS2heterobilayers.Phys. Rev. B101, 121404(R) (2020)..

Jiang, C. Y. et al. Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures.Nat. Commun.9, 753 (2018)..

Nagler, P. et al. Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure.2D Mater.4, 025112 (2017)..

Unuchek, D. et al. Room-temperature electrical control of exciton flux in a van der Waals heterostructure.Nature560, 340-344 (2018)..

Jauregui, L. A. et al. Electrical control of interlayer exciton dynamics in atomically thin heterostructures.Science366, 870-875 (2019)..

Fogler, M. M., Butov, L. V.&Novoselov, K. S. High-temperature superfluidity with indirect excitons in van der Waals heterostructures.Nat. Commun.5, 4555 (2014)..

Wang, Z. F. et al. Evidence of high-temperature exciton condensation in two-dimensional atomic double layers.Nature574, 76-80 (2019)..

Rivera, P. et al. Valley-polarized exciton dynamics in a 2D semiconductor heterostructure.Science351, 688-691 (2016)..

Unuchek, D. et al. Valley-polarized exciton currents in a van der Waals heterostructure.Nat. Nanotechnol.14, 1104-1109 (2019)..

Rivera, P. et al. Interlayer valley excitons in heterobilayers of transition metal dichalcogenides.Nat. Nanotechnol.13, 1004-1015 (2018)..

Yu, H. Y. et al. Moiré excitons: from programmable quantum emitter arrays to spin-orbit-coupled artificial lattices.Sci. Adv.3, e1701696 (2017)..

Komsa, H. P.&Krasheninnikov, A. V. Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles.Phys. Rev. B88, 085318 (2013)..

Kang, J. et al. Electronic structural moiré pattern effects on MoS2/MoSe22D heterostructures.Nano Lett.13, 5485-5490 (2013)..

Amin, B., Singh, N.&Schwingenschlogl, U. Heterostructures of transition metal dichalcogenides.Phys. Rev. B92, 075439 (2015)..

Wang, Y. et al. Interlayer coupling in commensurate and incommensurate bilayer structures of transition-metal dichalcogenides.Phys. Rev. B95, 115429 (2017)..

Ruiz-Tijerina, D. A.&Fal'ko, V. I. Interlayer hybridization and moire superlattice minibands for electrons and excitons in heterobilayers of transition-metal dichalcogenides.Phys. Rev. B99, 125424 (2019)..

Heo, H. et al. Interlayer orientation-dependent light absorption and emission in monolayer semiconductor stacks.Nat. Commun.6, 7372 (2015)..

Okada, M. et al. Direct and indirect interlayer excitons in a van der Waals heterostructure of hBN/WS2/MoS2/hBN.ACS Nano12, 2498-2505 (2018)..

Kunstmann, J. et al. Momentum-space indirect interlayer excitons in transition-metal dichalcogenide van der Waals heterostructures.Nat. Phys.14, 801-805 (2018)..

Hanbicki, A. T. et al. Double indirect interlayer exciton in a MoSe2/WSe2van der Waals heterostructure.ACS Nano12, 4719-4726 (2018)..

Merkl, P. et al. Twist-tailoring Coulomb correlations in van der Waals homobilayers.Nat. Commun.11, 2167 (2020)..

Brem, S. et al. Hybridized intervalley moire excitons and flat bands in twisted WSe2bilayers.Nanoscale12, 11088-11094 (2020)..

Liu, G. B. et al. Electronic structures and theoretical modelling of two-dimensional group-ⅥB transition metal dichalcogenides.Chem. Soc. Rev.44, 2643-2663 (2015)..

Tongay, S. et al. Tuning Interlayer coupling in large-area heterostructures with CVD-Grown MoS2and WS2monolayers.Nano Lett.14, 3185-3190 (2014)..

Liu, K. H. et al. Evolution of interlayer coupling in twisted molybdenum disulfide bilayers.Nat. Commun.5, 4966 (2014)..

van der Zande, A. M. et al. Tailoring the electronic structure in bilayer molybdenum disulfide via interlayer twist.Nano Lett.14, 3869-3875 (2014)..

Hong, X. P. et al. Ultrafast charge transfer in atomically thin MoS2/WS2heterostructures.Nat. Nanotechnol.9, 682-686 (2014)..

Ceballos, F. et al. Ultrafast charge separation and indirect exciton Formation in a MoS2-MoSe2van der Waals heterostructure.ACS Nano8, 12717-12724 (2014)..

Jin, C. H. et al. Ultrafast dynamics in van der Waals heterostructures.Nat. Nanotechnol.13, 994-1003 (2018)..

Chen, H. L. et al. Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2heterostructures.Nat. Commun.7, 12512 (2016)..

Zhu, H. M. et al. Interfacial charge transfer circumventing momentum mismatch at two-dimensional van der Waals heterojunctions.Nano Lett.17, 3591-3598 (2017)..

Ji, Z. H. et al. Robust stacking-independent ultrafast charge transfer in MoS2/WS2bilayers.ACS Nano11, 12020-12026 (2017)..

Wang, K. et al. Interlayer coupling in twisted WSe2/WS2bilayer heterostructures revealed by optical spectroscopy.ACS Nano10, 6612-6622 (2016)..

Peng, B. et al. Ultrafast charge transfer in MoS2/WSe2p-n heterojunction.2D Mater.3, 025020 (2016)..

Pan, S. D. et al. Ultrafast charge transfer between MoTe2and MoS2monolayers.2D Mater.4, 015033 (2017)..

Zereshki, P. et al. Interlayer charge transfer in ReS2/WS2van der Waals heterostructures.Phys. Rev. B99, 195438 (2019)..

Ceballos, F. et al. Highly efficient and anomalous charge transfer in van der Waals trilayer semiconductors.Nano Lett.17, 1623-1628 (2017)..

Ma, E. Y. et al. Recording interfacial currents on the subnanometer length and femtosecond time scale by terahertz emission.Sci. Adv.5, eaau0073 (2019)..

Zhu, X. Y. et al. Charge transfer excitons at van der Waals interfaces.J. Am. Chem. Soc.137, 8313-8320 (2015)..

Wang, H. et al. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures.Nat. Commun.7, 11504 (2016)..

Zhang, J. et al. Interlayer-state-coupling dependent ultrafast charge transfer in MoS2/WS2bilayers.Adv. Sci.4, 1700086 (2017)..

Long, R.&Prezhdo, O. V. Quantum coherence facilitates efficient charge separation at a MoS2/MoSe2van der Waals junction.Nano Lett.16, 1996-2003 (2016)..

Li, L. Q., Long, R.&Prezhdo, O. V. Charge separation and recombination in two-dimensional MoS2/WS2: time-domain ab initio modeling.Chem. Mater.29, 2466-2473 (2017)..

Tong, Q. J. et al. Topological mosaics in moire superlattices of van der Waals heterobilayers.Nat. Phys.13, 356-362 (2017)..

Zheng, Q. J. et al. Phonon-assisted ultrafast charge transfer at van der Waals heterostructure interface.Nano Lett.17, 6435-6442 (2017)..

Liu, F., Li, Q. Y.&Zhu, X. Y. Direct determination of momentum-resolved electron transfer in the photoexcited van der Waals heterobilayer WS2/MoS2.Phys. Rev. B101, 201405(R) (2020)..

Liu, J. Y., Zhang, X.&Lu, G. Excitonic effect drives ultrafast dynamics in van der Waals heterostructures.Nano Lett.20, 4631-4637 (2020)..

Qiu, D. Y., da Jornada, F. H.&Louie, S. G. Optical spectrum of MoS2: many-body effects and diversity of exciton states.Phys. Rev. Lett.111, 216805 (2013)..

Cheiwchanchamnangij, T.&Lambrecht, W. R. L. Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2.Phys. Rev. B85, 205302 (2012)..

Ramasubramaniam, A. Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides.Phys. Rev. B86, 115409 (2012)..

Komsa, H. P.&Krasheninnikov, A. V. Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2from first principles.Phys. Rev. B86, 241201(R) (2012)..

Shi, H. L. et al. Quasiparticle band structures and optical properties of strained monolayer MoS2and WS2.Phys. Rev. B87, 155304 (2013)..

Ye, Z. L. et al. Probing excitonic dark states in single-layer tungsten disulphide.Nature513, 214-218 (2014)..

Berkelbach, T. C., Hybertsen, M. S.&Reichman, D. R. Theory of neutral and charged excitons in monolayer transition metal dichalcogenides.Phys. Rev. B88, 045318 (2013)..

Yu, H. Y. et al. Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers.Phys. Rev. Lett.115, 187002 (2015)..

Meckbach, L. et al. Interlayer excitons in transition-metal dichalcogenide heterostructures with type-Ⅱ band alignment.J. Phys. Condens. Matter30, 374002 (2018)..

Gillen, R.&Maultzsch, J. Interlayer excitons in MoSe2/WSe2heterostructures from first principles.Phys. Rev. B97, 165306 (2018)..

Dong, X. Y. et al. Interlayer exciton-polaron effect in transition metal dichalcogenides van der Waals heterostructures.J. Phys. Chem. Solids134, 1-4 (2019)..

Latini, S. et al. Interlayer excitons and band alignment in MoS2/hBN/WSe2van der Waals heterostructures.Nano Lett.17, 938-945 (2017)..

Van der Donck, M.&Peeters, F. M. Interlayer excitons in transition metal dichalcogenide heterostructures.Phys. Rev. B98, 115104 (2018)..

Kamban, H. C.&Pedersen, T. G. Interlayer excitons in van der Waals heterostructures: binding energy, Stark shift, and field-induced dissociation.Sci. Rep.10, 5537 (2020)..

Mouri, S. et al. Thermal dissociation of inter-layer excitons in MoS2/MoSe2hetero-bilayers.Nanoscale9, 6674-6679 (2017)..

Ponomarev, E. et al. Semiconducting van der Waals interfaces as artificial semiconductors.Nano Lett.18, 5146-5152 (2018)..

Merkl, P. et al. Ultrafast transition between exciton phases in van der Waals heterostructures.Nat. Mater.18, 691-696 (2019)..

Li, L. H. et al. Wavelength-tunable interlayer exciton emission at the near-infrared region in van der Waals semiconductor heterostructures.Nano Lett.20, 3361-3368 (2020)..

Yuan, L. et al. Twist-angle-dependent interlayer exciton diffusion in WS2-WSe2heterobilayers.Nat. Mater.19, 617-623 (2020)..

Luong, D. H. et al. Tunneling photocurrent assisted by interlayer excitons in staggered van der Waals hetero-bilayers.Adv. Mater.29, 1701512 (2017)..

Gong, Y. J. et al. Vertical and in-plane heterostructures from WS2/MoS2monolayers.Nat. Mater.13, 1135-1142 (2014)..

Heo, H. et al. Rotation-misfit-free heteroepitaxial stacking and stitching growth of hexagonal transition-metal dichalcogenide monolayers by nucleation kinetics controls.Adv. Mater.27, 3803-3810 (2015)..

Karni, O. et al. Infrared interlayer exciton emission in MoS2/WSe2heterostructures.Phys. Rev. Lett.123, 247402 (2019)..

Liu, Y. D. et al. Room temperature nanocavity laser with interlayer excitons in 2D heterostructures.Sci. Adv.5, eaav4506 (2019)..

Lee, C. H. et al. Atomically thin p-n junctions with van der Waals heterointerfaces.Nat. Nanotechnol.9, 676-681 (2014)..

Bellus, M. Z. et al. Tightly bound trions in transition metal dichalcogenide heterostructures.ACS Nano9, 6459-6464 (2015)..

Ceballos, F. et al. Probing charge transfer excitons in a MoSe2-WS2van der Waals heterostructure.Nanoscale7, 17523-17528 (2015)..

Alexeev, E. M. et al. Imaging of interlayer coupling in van der Waals heterostructures using a bright-field optical microscope.Nano Lett.17, 5342-5349 (2017)..

Nayak, P. K. et al. Probing evolution of twist-angle-dependent interlayer excitons in MoSe2/WSe2van der Waals heterostructures.ACS Nano11, 4041-4050 (2017)..

Ross, J. S. et al. Interlayer exciton optoelectronics in a 2D heterostructure p-n junction.Nano Lett.17, 638-643 (2017)..

Calman, E. V. et al. Indirect excitons and trions in MoSe2/WSe2van der Waals heterostructures.Nano Lett.20, 1869-1875 (2020)..

Schaibley, J. R. et al. Directional interlayer spin-valley transfer in two-dimensional heterostructures.Nat. Commun.7, 13747 (2016)..

Surrente, A. et al. Defect healing and charge transfer-mediated valley polarization in MoS2/MoSe2/MoS2trilayer van der Waals heterostructures.Nano Lett.17, 4130-4136 (2017)..

Paradisanos, I. et al. Controlling interlayer excitons in MoS2layers grown by chemical vapor deposition.Nat. Commun.11, 2391 (2020)..

Kim, M. S. et al. Simultaneous hosting of positive and negative trions and the enhanced direct band emission in MoSe2/MoS2heterostacked multilayers.ACS Nano10, 6211-6219 (2016)..

Cheng,R. et al. Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2heterojunctionp-ndiodes.Nano Lett.14, 5590-5597 (2014)..

Binder, J. et al. Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Waals heterostructures.Nat. Commun.10, 2335 (2019)..

Wang, T. M. et al. Giant valley-zeeman splitting from spin-singlet and spin-triplet interlayer excitons in WSe2/MoSe2heterostructure.Nano Lett.20, 694-700 (2020)..

Förg, M. et al. Cavity-control of interlayer excitons in van der Waals heterostructures.Nat. Commun.10, 3697 (2019)..

Yan, J. H. et al. Tunable control of interlayer excitons in WS2/MoS2heterostructures via strong coupling with enhanced mie resonances.Adv. Sci.6, 1802092 (2019)..

Latini, S. et al. Cavity control of excitons in two-dimensional materials.Nano Lett.19, 3473-3479 (2019)..

Xia, J. et al. Strong coupling and pressure engineering in WSe2-MoSe2heterobilayers.Nat. Phys.17, 92-98 (2021)..

Ubrig, N. et al. Design of van der Waals interfaces for broad-spectrum optoelectronics.Nat. Mater.19, 299-304 (2020)..

Wu, F. C., Lovorn, T.&MacDonald, A. H. Theory of optical absorption by interlayer excitons in transition metal dichalcogenide heterobilayers.Phys. Rev. B97, 035306 (2018)..

Ciarrocchi, A. et al. Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures.Nat. Photonics13, 131-136 (2019)..

Kremser, M. et al. Discrete interactions between a few interlayer excitons trapped at a MoSe2-WSe2heterointerface.npj 2D Mater. Appl.4, 8 (2020)..

Li, W. J. et al. Dipolar interactions between localized interlayer excitons in van der Waals heterostructures.Nat. Mater.19, 624-629 (2020)..

Debnath, B. et al. Exciton condensate in bilayer transition metal dichalcogenides: strong coupling regime.Phys. Rev. B96, 174504 (2017)..

Cao, T. et al. Valley-selective circular dichroism of monolayer molybdenum disulphide.Nat. Commun.3, 887 (2012)..

Zeng, H. L. et al. Valley polarization in MoS2monolayers by optical pumping.Nat. Nanotechnol.7, 490-493 (2012)..

Mak, K. F. et al. Control of valley polarization in monolayer MoS2by optical helicity.Nat. Nanotechnol.7, 494-498 (2012)..

Sallen, G. et al. Robust optical emission polarization in MoS2monolayers through selective valley excitation.Phys. Rev. B86, 081301(R) (2012)..

Mak, K. F. et al. The valley Hall effect in MoS2transistors.Science344, 1489-1492 (2014)..

Lee, J., Mak, K. F.&Shan, J. Electrical control of the valley Hall effect in bilayer MoS2transistors.Nat. Nanotechnol.11, 421-425 (2016)..

Lee, J. et al. Valley magnetoelectricity in single-layer MoS2.Nat. Mater.16, 887-891 (2017)..

Wu, S. F. et al. Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2.Nat. Phys.9, 149-153 (2013)..

Li, Y. L. et al. Valley splitting and polarization by the zeeman effect in monolayer MoSe2.Phys. Rev. Lett.113, 266804 (2014)..

Srivastava, A. et al. Valley Zeeman effect in elementary optical excitations of monolayer WSe2.Nat. Phys.11, 141-147 (2015)..

Xiao, D., Yao, W.&Niu, Q. Valley-contrasting physics in graphene: magnetic moment and topological transport.Phys. Rev. Lett.99, 236809 (2007)..

Yao, W., Xiao, D.&Niu, Q. Valley-dependent optoelectronics from inversion symmetry breaking.Phys. Rev. B77, 235406 (2008)..

Xiao, D. et al. Coupled spin and valley physics in monolayers of MoS2and other Group-Ⅵ dichalcogenides.Phys. Rev. Lett.108, 196802 (2012)..

Yu, H. Y., Liu, G. B.&Yao, W. Brightened spin-triplet interlayer excitons and optical selection rules in van der Waals heterobilayers.2D Mater.5, 035021 (2018)..

Zhang, L. et al. Highly valley-polarized singlet and triplet interlayer excitons in van der Waals heterostructure.Phys. Rev. B100, 041402(R) (2019)..

Huang, Z. M. et al. Robust room temperature valley hall effect of interlayer excitons.Nano Lett.20, 1345-1351 (2020)..

Hsu, W. T. et al. Negative circular polarization emissions from WSe2/MoSe2commensurate heterobilayers.Nat. Commun.9, 1356 (2018)..

Wang, G. et al. Magneto-optics in transition metal diselenide monolayers.2D Mater.2, 034002 (2015)..

Li, Z. P. et al. Revealing the biexciton and trion-exciton complexes in BN encapsulated WSe2.Nat. Commun.9, 3719 (2018)..

Li, Z. P. et al. Emerging photoluminescence from the dark-exciton phonon replica in monolayer WSe2.Nat. Commun.10, 2469 (2019)..

Seyler, K. L. et al. Signatures of moiré-trapped valley excitons in MoSe2/WSe2heterobilayers.Nature567, 66-70 (2019)..

Baek, H. et al. Highly energy-tunable quantum light from moiré-trapped excitons.Sci. Adv.6, eaba8526 (2020)..

Woźniak, T. et al. Excitongfactors of van der Waals heterostructures from first-principles calculations.Phys. Rev. B101, 235408 (2020)..

Cao, Y. et al. Correlated insulator behaviour at half-filling in magic-angle graphene superlattices.Nature556, 80-84 (2018)..

Cao, Y. et al. Unconventional superconductivity in magic-angle graphene superlattices.Nature556, 43-50 (2018)..

Wu, F. C., Lovorn, T.&MacDonald, A. H. Topological exciton bands in moiré heterojunctions.Phys. Rev. Lett.118, 147401 (2017)..

Zhang, N. et al. Moiré intralayer excitons in a MoSe2/MoS2heterostructure.Nano Lett.18, 7651-7657 (2018)..

Lu, X. B., Li, X. Q.&Yang, L. Modulated interlayer exciton properties in a two-dimensional moire crystal.Phys. Rev. B100, 155416 (2019)..

Geng, W. T. et al. Moiré potential, lattice corrugation, and band gap spatial variation in a twist-free MoTe2/MoS2heterobilayer.J. Phys. Chem. Lett.11, 2637-2646 (2020)..

Tran, K. et al. Evidence for moire excitons in vander Waals heterostructures.Nature567, 71-75 (2019)..

Jin, C. H. et al. Observation of moire excitons in WSe2/WS2heterostructure superlattices.Nature567, 76-80 (2019)..

Jin, C. H. et al. Identification of spin, valley and moire quasi-angular momentum of interlayer excitons.Nat. Phys.15, 1140-1144 (2019)..

Brotons-Gisbert, M. et al. Spin-layer locking of interlayer excitons trapped in moiré potentials.Nat. Mater.19, 630-636 (2020)..

Shimazaki, Y. et al. Strongly correlated electrons and hybrid excitons in a moire heterostructure.Nature580, 472-477 (2020)..

Alexeev, E. M. et al. Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures.Nature567, 81-86 (2019)..

Yu, H. Y.&Yao, W. Electrically tunable topological transport of moiré polaritons.Sci. Bull.65, 1555-1562 (2020)..

Palummo, M., Bernardi, M.&Grossman, J. C. Exciton radiative lifetimes in two-dimensional transition metal dichalcogenides.Nano Lett.15, 2794-2800 (2015)..

Ovesen, S. et al. Interlayer exciton dynamics in van der Waals heterostructures.Commun. Phys.2, 23 (2019)..

Yu, Y. et al. Ultrafast Formation and dynamics of interlayer exciton in a large-area CVD-grown WS2/WSe2heterostructure.J. Phys. Condens. Matter30, 495701 (2018)..

Zhou, H. Z. et al. Controlling exciton and valley dynamics in two-dimensional heterostructures with atomically precise interlayer proximity.ACS Nano14, 4618-4625 (2020)..

Choi, C. et al. Enhanced interlayer neutral excitons and trions in trilayer van der Waals heterostructures.npj 2D Mater. Appl.2, 30 (2018)..

Choi, J. et al. Moiré potential impedes interlayer exciton diffusion in van der Waals heterostructures.Sci. Adv.6, eaba8866 (2020)..

Wang, Q. S. et al. Valley carrier dynamics in monolayer molybdenum disulfide from helicity-resolved ultrafast pump-probe spectroscopy.ACS Nano7, 11087-11093 (2013)..

Mai, C. et al. Many-body effects in valleytronics: direct measurement of valley lifetimes in Single-Layer MoS2.Nano Lett.14, 202-206 (2014)..

Zhu, C. R. et al. Exciton valley dynamics probed by Kerr rotation in WSe2monolayers.Phys. Rev. B90, 161302(R) (2014)..

Hao, K. et al. Direct measurement of exciton valley coherence in monolayer WSe2.Nat. Phys.12, 677-682 (2016)..

Maialle, M. Z., de Andrada e Silva, E. A.&Sham, L. J. Exciton spin dynamics in quantum wells.Phys. Rev. B47, 15776-15788 (1993)..

Yu, H. Y. et al. Dirac cones and Dirac saddle points of bright excitons in monolayer transition metal dichalcogenides.Nat. Commun.5, 3876 (2014)..

Yu, T.&Wu, M. W. Valley depolarization due to intervalley and intravalley electron-hole exchange interactions in monolayer MoS2.Phys. Rev. B89, 205303 (2014)..

Jin, C. H. et al. Imaging of pure spin-valley diffusion current in WS2-WSe2heterostructures.Science360, 893-896 (2018)..

Kim, J. et al. Observation of ultralong valley lifetime in WSe2/MoS2heterostructures.Sci. Adv.3, e1700518 (2017)..

High, A. A. et al. Control of exciton fluxes in an excitonic integrated circuit.Science321, 229-231 (2008)..

Butov, L. V. Excitonic devices.Superlattices Microstruct.108, 2-26 (2017)..

Feldmann, J. et al. Linewidth dependence of radiative exciton lifetimes in quantum wells.Phys. Rev. Lett.59, 2337-2340 (1987)..

Deveaud, B. et al. Enhanced radiative recombination of free excitons in GaAs quantum wells.Phys. Rev. Lett.67, 2355-2358 (1991)..

Butov, L. V. et al. Condensation of indirect excitons in coupled AlAs/GaAs quantum wells.Phys. Rev. Lett.73, 304-307 (1994)..

Winbow, A. G. et al. Photon storage with nanosecond switching in coupled quantum well nanostructures.Nano Lett.7, 1349-1351 (2007)..

Hagn, M. et al. Electric‐field‐induced exciton transport in coupled quantum well structures.Appl. Phys. Lett.67, 232-234 (1995)..

Butov, L. V.&Filin, A. I. Anomalous transport and luminescence of indirect excitons in AlAs/GaAs coupled quantum wells as evidence for exciton condensation.Phys. Rev. B58, 1980-2000 (1998)..

Butov, L. V. et al. Photoluminescence kinetics of indirect excitons in GaAs/AlxGa1-xAs coupled quantum wells.Phys. Rev. B59, 1625-1628 (1999)..

High, A. A. et al. Exciton optoelectronic transistor.Opt. Lett.32, 2466-2468 (2007)..

Butov, L. V., Gossard, A. C.&Chemla, D. S. Macroscopically ordered state in an exciton system.Nature418, 751-754 (2002)..

Vörös, Z. et al. Long-distance diffusion of excitons in double quantum well structures.Phys. Rev. Lett.94, 226401 (2005)..

Ivanov, A. L. et al. Origin of the inner ring in photoluminescence patterns of quantum well excitons.Europhys. Lett.73, 920-926 (2006)..

Rapaport, R., Chen, G.&Simon, S. H. Nonlinear dynamics of a dense two-dimensional dipolar exciton gas.Phys. Rev. B73, 033319 (2006)..

Chemla, D. et al. Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures.IEEE J. Quantum Electron.20, 265-275 (1984)..

Szymanska, M. H.&Littlewood, P. B. Excitonic binding in coupled quantum wells.Phys. Rev. B67, 193305 (2003)..

Grosso, G. et al. Excitonic switches operating at around 100 K.Nat. Photonics3, 577-580 (2009)..

Li, Z. D. et al. Exciton transport under periodic potential in MoSe2/WSe2 heterostructures.https://arXiv.org/2002.01561https://arXiv.org/2002.01561(2020).

Woods, C. R. et al. Commensurate-incommensurate transition in graphene on hexagonal boron nitride.Nat. Phys.10, 451-456 (2014)..

Yoo, H. et al. Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene.Nat. Mater.18, 448-453 (2019)..

Liu, Y. W. et al. Tunable lattice reconstruction, triangular network of chiral one-dimensional states, and bandwidth of flat bands in magic angle twisted bilayer graphene.Phys. Rev. Lett.125, 236102 (2020)..

Zhang, S. et al. Abnormal conductivity in low-angle twisted bilayer graphene.Sci. Adv.6, eabc5555 (2020)..

Rosenberger, M. R. et al. Twist angle-dependent atomic reconstruction and Moiré patterns in transition metal dichalcogenide heterostructures.ACS Nano14, 4550-4558 (2020)..

Weston, A. et al. Atomic reconstruction in twisted bilayers of transition metal dichalcogenides.Nat. Nanotechnol.15, 592-597 (2020)..

Paik,E. Y. et al. Interlayer exciton laser of extended spatial coherence in atomically thin heterostructures.Nature576, 80-84 (2019)..

Lukman, S. et al. High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection.Nat. Nanotechnol.15, 675-682 (2020)..

Mak, K. F.&Shan, J. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides.Nat. Photonics10, 216-226 (2016)..

Butov, L. V. Cold exciton gases in coupled quantum well structures.J. Phys. Condens. Matter19, 295202 (2007)..

Eisenstein, J. P.&MacDonald, A. H. Bose-Einstein condensation of excitons in bilayer electron systems.Nature432, 691-694 (2004)..

Hsu, W. T. et al. Tailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spin.Sci. Adv.5, eaax7407 (2019)..

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