Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides

Ke Jiang; Xiaojuan Sun; Zhiming Shi; Hang Zang; Jianwei Ben; Hui-Xiong Deng; Dabing Li

doi:10.1038/s41377-021-00503-y

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Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides

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- Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides
- Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides
- LSA 2021年10卷第4期页码：671-680
- Affiliations：
  
  1.State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun, 130033, China
  2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Yuquan Road No. 19, Beijing, 100049, China
  3.State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Qinghuadong Road No. 35, Beijing, 100083, China
- Author bio：
  
  Hui-Xiong Deng (hxdeng@semi.ac.cn)
  Dabing Li (lidb@ciomp.ac.cn)
- Funds：
- DOI：10.1038/s41377-021-00503-y
  中图分类号：
- 纸质出版日期：2021-04-30，
  
  网络出版日期：2021-03-31，
  
  收稿日期：2021-01-18，
  
  修回日期：2021-02-21，
  
  录用日期：2021-02-25
- Accepted：
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Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides[J]. LSA, 2021,10(4):671-680.

Jiang, K. et al. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. Light: Science & Applications, 10, 671-680 (2021).
Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides[J]. LSA, 2021,10(4):671-680. DOI： 10.1038/s41377-021-00503-y.

Jiang, K. et al. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. Light: Science & Applications, 10, 671-680 (2021). DOI： 10.1038/s41377-021-00503-y.

摘要

Abstract

Ultra-wide band-gap nitrides have huge potential in micro- and optoelectronics due to their tunable wide band-gap

high breakdown field an

d energy density

excellent chemical and thermal stability. However

their application has been severely hindered by the low p-doping efficiency

which is ascribed to the ultrahigh acceptor activation energy originated from the low valance band maximum. Here

a valance band modulation mode is proposed and a quantum engineering doping method is conducted to achieve high-efficient p-type ultra-wide band-gap nitrides

in which GaN quantum-dots are buried in nitride matrix to produce a new band edge and thus to tune the dopant activation energy. By non-equilibrium doping techniques

quantum engineering doped AlGaN: Mg with Al content of 60% is successfully fabricated. The Mg activation energy has been reduced to about 21 meV

and the hole concentration reaches higher than 10

−3

at room temperature. Also

similar activation energies are obtained in AlGaN with other Al contents such as 50% and 70%

indicating the universality of the quantum engineering doping method. Moreover

deep-ultraviolet light-emission diodes are fabricated and the improved performance further demonstrates the validity and merit of the method. With the quantum material growth techniques developing

this method would be prevalently available and tremendously stimulate the promotion of ultra-wide band-gap semiconductor-based devices.

关键词

Keywords

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