Highly efficient THz four-wave mixing in doped silicon

Nils Dessmann; Nguyen H. Le; Viktoria Eless; Steven Chick; Kamyar Saeedi; Alberto Perez-Delgado; Sergey G. Pavlov; Alexander F.G. van der Meer; Konstantin L. Litvinenko; Ian Galbraith; Nikolay V. Abrosimov; Helge Riemann; Carl R. Pidgeon; CarlR. AeppliGabriel; Britta Redlich; Benedict N. Murdin

doi:10.1038/s41377-021-00509-6

Go to Nature Website

Your Location：

Home >

Browse articles >

Highly efficient THz four-wave mixing in doped silicon

Articles

- Highly efficient THz four-wave mixing in doped silicon
- Highly efficient THz four-wave mixing in doped silicon
- LSA 2021年10卷第5期页码：806-811
- Affiliations：
  
  1.Radboud University, Institute for Molecules and Materials, HFML-FELIX, Nijmegen, The Netherlands
  2.Advanced Technology Institute and Department of Physics, University of Surrey, Guildford GU2 7XH, UK
  3.Institute of Optical Sensor Systems, German Aerospace Center, Berlin, Germany
  4.Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
  5.Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany
  6.Laboratory for Solid State Physics, ETH Zürich, 8093 Zürich, Switzerland
  7.Institut de Physique, EPFL, 1015 Lausanne, Switzerland
  8.Paul Scherrer Institute, 5232 Villigen, Switzerland
- Author bio：
  
  Nils Dessmann (nils.dessmann@ru.nl)
  Nguyen H. Le (h.le@surrey.ac.uk)
- Funds：
- DOI：10.1038/s41377-021-00509-6
  中图分类号：
- 纸质出版日期：2021-05-31，
  
  网络出版日期：2021-04-01，
  
  收稿日期：2020-07-10，
  
  修回日期：2021-03-02，
  
  录用日期：2021-03-10
- Accepted：
Scan QR Code
Highly efficient THz four-wave mixing in doped silicon[J]. LSA, 2021,10(5):806-811.

Dessmann, N. et al. Highly efficient THz four-wave mixing in doped silicon. Light: Science & Applications, 10, 806-811 (2021).
Highly efficient THz four-wave mixing in doped silicon[J]. LSA, 2021,10(5):806-811. DOI： 10.1038/s41377-021-00509-6.

Dessmann, N. et al. Highly efficient THz four-wave mixing in doped silicon. Light: Science & Applications, 10, 806-811 (2021). DOI： 10.1038/s41377-021-00509-6.

摘要

Abstract

Third-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility

(3)

(where

represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser

we show that silicon doped with P or Bi has a value of

(3)

in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a

(3)

process)

and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime.

关键词

Keywords

references

Boyd, R. W. InNonlinear Optics (Third Edition)(ed. Boyd, R. W. ) Ch. 4 (Academic, 2008).

Wang, P., Liang, J.&Wang, L. V. Single-shot ultrafast imaging attaining 70 trillion frames per second.Nat. Commun.11, 2091 (2020)..

Yang, K. Y. et al. Inverse-designed non-reciprocal pulse router for chip-based LiDAR.Nat. Photon.14, 369-374 (2020)..

Elshaari, A. W., Pernice, W., Srinivasan, K., Benson, O.&Zwiller, V. Hybrid integrated quantum photonic circuits.Nat. Photon.14, 285-298 (2020)..

Feng, L., Guo, G.&Ren, X. Progress on integrated quantum photonic sources with silicon.Adv. Quantum Technol.3, 1900058 (2020)..

Paesani, S. et al. Near-ideal spontaneous photon sources in silicon quantum photonics.Nat. Commun.11, 2505 (2020)..

Ganichev, S. D. Intense terahertz excitation of semiconductors.Terahertz Sci. Technol.1, 136-160 (2008)..

Mayer, A.&Keilmann, F. Far-infrared nonlinear optics. Ⅱ. Chi3 contributions from the dynamics of free carriers in semiconductors.Phys. Rev. B33, 6962-6968 (1986)..

Markelz, A., Gwinn, E., Sherwin, M., Nguyen, C.&Kroemer, H. Giant third-order nonlinear susceptibilities for in-plane far-infrared excitation of single InAs quantum wells.Solid State Electron.37, 1243-1245 (1994)..

König-Otto, J. C. et al. Four-wave mixing in Landau-quantized graphene.Nano Lett.17, 2184-2188 (2017)..

Hafez, H. A. et al. Extremely efficient terahertz high-harmonic generation in graphene by hot Dirac fermions.Nature561, 507-511 (2018)..

van Loon, M. A. W. et al. Giant multiphoton absorption for THz resonances in silicon hydrogenic donors.Nat. Photon.12, 179-184 (2018)..

Le, N. H., Lanskii, G. V., Aeppli, G.&Murdin, B. N. Giant non-linear susceptibility of hydrogenic donors in silicon and germanium.Light Sci. Appl.8, 64 (2019)..

Meng, F. et al. Intracavity third-harmonic generation in Si: B pumped by intense terahertz pulses.Phys. Rev. B102, 1-9 (2020)..

Greenland, P. T. et al. Coherent control of Rydberg states in silicon.Nature465, 1057-1061 (2010)..

Pajot, B.Optical Absorption of Impurities and Defects in Semiconducting Crystals, Vol. 158 (Springer, 2010).

Stavrias, N. et al. Competition between homogeneous and inhomogeneous broadening of orbital transitions in Si: Bi.Phys. Rev. B96, 155204 (2017)..

Autere, A. et al. Nonlinear optics with 2D layered materials.Adv. Mater.30, 1705963 (2018)..

Sirtori, C., Capasso, F., Sivco, D. L.&Cho, A. Y. Giant, triply resonant, third-order nonlinear susceptibility Chi3.Phys. Rev. Lett.68, 1010-1013 (1992)..

Yao, X.&Belyanin, A. Nonlinear optics of graphene in a strong magnetic field.J. Phys. Condens. Matter25, 054203 (2013)..

Vinh, N. Q. et al. Silicon as a model ion trap: time domain measurements of donor Rydberg states.Proc. Natl Acad. Sci. USA105, 10649-10653 (2008)..

MacKenzie, H. A., Wherrett, B. S., Alattar, H. A.&Yuen, S. Y. Near-resonant non-degenerate four-wave mixing in InSb.J. Phys. B At. Mol. Phys.17, 2141-2149 (1984)..

Sirtori, C., Barbieri, S.&Colombelli, R. Wave engineering with THz quantum cascade lasers.Nat. Photon.7, 691-701 (2013)..

Madéo, J. et al. All-optical wavelength shifting in a semiconductor laser using resonant nonlinearities.Nat. Photon.6, 519-524 (2012)..

Guo, J. et al. Doped GaSe crystals for laser frequency conversion.Light Sci. Appl.4, e362 (2015)..

Nagatsuma, T., Ducournau, G.&Renaud, C. C. Advances in terahertz communications accelerated by photonics.Nat. Photon.10, 371-379 (2016)..

Koulouklidis, A. D. et al. Observation of extremely efficient terahertz generation from mid-infrared two-color laser filaments.Nat. Commun.11, 292 (2020)..

Dessmann, N. Data sets for "highly efficient thz four-wave mixing in doped silicon".https://doi.org/10.5281/zenodo.4557683https://doi.org/10.5281/zenodo.4557683(2021).

Clauws, P., Broeckx, J., Rotsaert, E.&Vennik, J. Oscillator strengths of shallow impurity spectra in germanium and silicon.Phys. Rev. B38, 12377 (1988)..

Jain, R. K.&Klein, M. B. Degenerate four-wave mixing near the band gap of semiconductors.Appl. Phys. Lett.35, 454-456 (1979)..

Wynne, J. J. Optical third-order mixing in GaAs, Ge, Si, and InAs.Phys. Rev.178, 1295-1303 (1969)..

Ganeev, R., Kulagin, I., Ryasnyansky, A., Tugushev, R.&Usmanov, T. Characterization of nonlinear optical parameters of KDP, LiNbO3and BBO crystals.Opt. Commun.229, 403-412 (2004)..

Turner, M. D., Roh, W. B.&Schepler, K. L. Nonlinear optical properties of GaSb and GaInAsSb and their application for phase conjugation in degenerate four-wave mixing.J. Opt. Soc. Am. B17, 790 (2000)..

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

暂无数据