Quantum-dot microlasers based on whispering gallery mode resonators

A. E. Zhukov; N. V. Kryzhanovskaya; E. I. Moiseev; M. V. Maximov

doi:10.1038/s41377-021-00525-6

Go to Nature Website

Your Location：

Home >

Browse articles >

Quantum-dot microlasers based on whispering gallery mode resonators

Reviews

- Quantum-dot microlasers based on whispering gallery mode resonators
- Quantum-dot microlasers based on whispering gallery mode resonators
- LSA 2021年10卷第5期页码：785-795
- Affiliations：
  
  1.Laboratory of quantum optoelectronics, National Research University Higher School of Economics, Kantemirovskaya 3A, St. Petersburg 194100, Russia
  2.Nanophotonics laboratory, Alferov University, Khlopina 8/3, St. Petersburg 194021, Russia
- Author bio：
  
  A. E. Zhukov (zhukale@gmail.com)
- Funds：
- DOI：10.1038/s41377-021-00525-6
  中图分类号：
- 纸质出版日期：2021-05-31，
  
  网络出版日期：2021-04-15，
  
  收稿日期：2020-12-14，
  
  修回日期：2021-03-24，
  
  录用日期：2021-03-30
- Accepted：
Scan QR Code
Quantum-dot microlasers based on whispering gallery mode resonators[J]. LSA, 2021,10(5):785-795.

Zhukov, A. E. et al. Quantum-dot microlasers based on whispering gallery mode resonators. Light: Science & Applications, 10, 785-795 (2021).
Quantum-dot microlasers based on whispering gallery mode resonators[J]. LSA, 2021,10(5):785-795. DOI： 10.1038/s41377-021-00525-6.

Zhukov, A. E. et al. Quantum-dot microlasers based on whispering gallery mode resonators. Light: Science & Applications, 10, 785-795 (2021). DOI： 10.1038/s41377-021-00525-6.

摘要

Abstract

The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes. Owing to the total internal reflection of light on the sidewalls

a high Q-factor is achieved until the diameter is comparable to the wavelength. The light emission predominantly occurs in the plane of the structure

which facilitates the microlaser integration with other elements. We focus on microdisk lasers with various types of the In(Ga)As quantum dots (QDs). Deep localization of charge carriers in spatially separated regions suppresses the lateral diffusion and makes it possible to overcome the undesirable effect of non-radiative recombination in deep mesas. Thus

using conventional epitaxial structures and relatively simple post-growth processing methods

it is possible to realize small microlasers capable of operating without temperature stabilization at elevated temperatures. The low sensitivity of QDs to epitaxial and manufacturing defects allows fabricating microlasers using Ⅲ-Ⅴ heterostructures grown on silicon.

关键词

Keywords

references

Sun, C. et al. Single-chip microprocessor that communicates directly using light.Nature528, 534-538 (2015)..

Coldren, L. A., Corzine, S. W.&Mašanović, M. L. Dynamic effects. In Diode Lasers and Photonic Integrated Circuits. 2nd edn (ed. Chang, K. ) Ch. 5 (Wiley, 2012).

Soda, H. et al. GaInAsP/InP surface emitting injection lasers.Jpn. J. Appl. Phys.18, 2329-2330 (1979)..

Iga, K., Kinoshita, S.&Koyama, F. Microcavity GalaAs/GaAs surface-emitting laser withIth= 6 mA.Electron. Lett.23, 134-135 (1987)..

Koyama, F., Kinoshita, S.&Iga, K. Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laser.Appl. Phys. Lett.55, 221-222 (1989)..

Jewell, J. L. et al. Low-threshold electrically pumped vertical-cavity surface-emitting microlasers.Electron. Lett.25, 1123-1124 (1989)..

Choquette, K. D. et al. Selective oxidation of buried AlGaAs versus AlAs layers.Appl. Phys. Lett.69, 1385-1387 (1996)..

Huffaker, D. L.&Deppe, D. G. Intracavity contacts for low-threshold oxide-confined vertical-cavity surface-emitting lasers.IEEE Photon. Technol. Lett.11, 934-936 (1999)..

Chang, Y. C. et al. High-efficiency, high-speed VCSELs with deep oxidation layers.Electron. Lett.42, 1281-1282 (2006)..

Moser, P. et al. 56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s.Electron. Lett.48, 1292-1294 (2012)..

Liu, A. et al. Vertical-cavity surface-emitting lasers for data communication and sensing.Photon. Res.7, 121-136 (2019)..

Shen, P. K. et al. On-chip optical interconnects integrated with laser and photodetector using three-dimensional silicon waveguides. Proceedings of 2014 Optical Fiber Communication Conference. (2014), paper M2K. 6.

Louderback, D. A. et al. VCSELs with monolithic coupling to internal horizontal waveguides using integrated diffraction gratings.Electron. Lett.40, 1064-1065 (2004)..

Kaur, K. S. et al. Flip-chip assembly of VCSELs to silicon grating couplers via laser fabricated SU8 prisms.Opt. Express23, 28264-28270 (2015)..

Levi, A. F. J. et al. Room temperature operation of microdisc lasers with submilliamp threshold current.Electron. Lett.28, 1010-1012 (1992)..

Slusher, R. E. et al. Threshold characteristics of semiconductor microdisk lasers.Appl. Phys. Lett.63, 1310-1312 (1993)..

Nolte, D. D. Surface recombination, free-carrier saturation, and dangling bonds in InP and GaAs.Solid-State Electron.33, 295-298 (1990)..

Swaminathan, V. et al. Evidence for surface recombination at mesa sidewalls of self-electro-optic effect devices.J. Appl. Phys.68, 4116-4118 (1990)..

Hu, S. Y. et al. Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum-well ridge-waveguide lasers.J. Appl. Phys.76, 4479-4487 (1994)..

Krijn, M. P. C. M. Heterojunction band offsets and effective masses in Ⅲ-Ⅴ quaternary alloys.Semicond. Sci. Technol.6, 27-31 (1991)..

Vurgaftman, I., Meyer, J. R.&Ram-Mohan, L. R. Band parameters for Ⅲ-Ⅴ compound semiconductors and their alloys.J. Appl. Phys.89, 5815-5875 (2001)..

Zou, L. X. et al. Thermal and high speed modulation characteristics for AlGaInAs/InP microdisk lasers.Opt. Express23, 2879-2888 (2015)..

Coldren, L. A., Corzine, S. W.&Mašanović, M. L. Gain and current relations. InDiode Lasers and Photonic Integrated Circuits, 2nd edn (ed. Chang, K. ) Ch. 4 (Wiley, 2012).

Ouyang, D. et al. High performance narrow stripe quantum-dot lasers with etched waveguide.Semicond. Sci. Technol.18, L53-L54 (2003)..

Fiore, A. et al. Carrier diffusion in low-dimensional semiconductors: a comparison of quantum wells, disordered quantum wells, and quantum dots.Phys. Rev. B70, 205311 (2004)..

Moore, S. A. et al. Reduced surface sidewall recombination and diffusion in quantum-dot lasers.IEEE Photonics Technol. Lett.18, 1861-1863 (2006)..

Zhukov, A. E. et al. Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates.Appl. Phys. Lett.75, 1926-1928 (1999)..

Liu, H. Y. et al. Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer.Appl. Phys. Lett.85, 704-706 (2004)..

Deppe, D. G. et al. Quantum dot laser diode with low threshold and low internal loss.Electron. Lett.45, 54-56 (2009)..

Fathpour, S. et al. The role of Auger recombination in the temperature-dependent output characteristics (T0= ∞) ofp-doped 1.3 μm quantum dot lasers.Appl. Phys. Lett.85, 5164-5166 (2004)..

Mintairov, S. A. et al. GaAs quantum well-dots solar cells with spectral response extended to 1100 nm.Electron. Lett.51, 1602-1604 (2015)..

Maximov, M. et al. Modification of InGaAs/GaAs heterostructure density of states and optical gain using hybrid quantum well-dots.Laser Phys. Lett.17, 095801 (2020)..

Tang, M. C. et al. Optimizations of defect filter layers for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates.IEEE J. Sel. Top. Quantum Electron.22, 1900207 (2016)..

Chen, S. M. et al. 1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100 ℃.Electron. Lett.50, 1467-1468 (2014)..

Wan, Y. T. et al. O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si.Opt. Express25, 26853-26860 (2017)..

Zhang, C. et al. Hybrid quantum-dot microring laser on silicon.Optica6, 1145-1151 (2019)..

Timsit, R. S. Contact interface conduction. in Electrical Contacts: Principles and Applications 2nd edn (ed Slade P. G. ) Ch. 1 (Boca Raton: CRC Press, 2014).

Niskov, V. Y.&Kubetskii, G. A. Resistance of ohmic contacts between metals and semiconductor films.Sov. Phys. - Semiconductors4, 1553-1554 (1971)..

Marlow, G. S.&Das, M. B. The effects of contact size and non-zero metal resistance on the determination of specific contact resistance.Solid-State Electron.25, 91-94 (1982)..

Zhukov, A. E. et al. Taking account of the substrate in calculation of the electrical resistance of microdisk lasers.Semiconductors55, 250-255 (2021)..

Schawlow, A. L.&Townes, C. H. Infrared and optical masers.Phys. Rev. J. Arch.112, 1940-1949 (1958)..

Zhukov, A. E. et al. Output power and its limitation in ridge-waveguide 1.3 µm wavelength quantum-dot lasers.Semicond. Sci. Technol.18, 774-781 (2003)..

Markus, A. et al. Simultaneous two-state lasing in quantum-dot lasers.Appl. Phys. Lett.82, 1818-1820 (2003)..

Markus, A.&Fiore, A. Modeling carrier dynamics in quantum‐dot lasers.Phys. Status Solidi (A)201, 338-344 (2004)..

Kim, Y. J., Joshi, Y. K.&Fedorov, A. G. Thermally dependent characteristics and spectral hole burning of the double-lasing, edge-emitting quantum-dot laser.J. Appl. Phys.107, 073104 (2010)..

Lee, J.&Lee, D. Double-state lasing from semiconductor quantum dot laser diodes caused by slow carrier relaxation.J. Korean Phys. Soc.58, 239-242 (2011)..

Korenev, V. V. et al. Analytical approach to the multi-state lasing phenomenon in quantum dot lasers.Appl. Phys. Lett.102, 112101 (2013)..

McCall, S. L. et al. Whispering-gallery mode microdisk lasers.Appl. Phys. Lett.60, 289-292 (1992)..

Braginsky, V. B., Gorodetsky, M. L.&Ilchenko, V. S. Quality-factor and nonlinear properties of optical whispering-gallery modes.Phys. Lett. A137, 393-397 (1989)..

Borselli, M., Johnson, T. J.&Painter, O. Beyond the Rayleigh scattering limit in high-Qsilicon microdisks: theory and experiment.Opt. Express13, 1515-1530 (2005)..

Weiss, D. S. et al. Splitting of high-QMie modes induced by light backscattering in silica microspheres.Opt. Lett.22, 1835-1837 (1995)..

Gorodetsky, M. L., Pryamikov, A. D.&Ilchenko, V. S. Rayleigh scattering in high-Qmicrospheres.J. Opt. Soc. Am. B17, 1051-1057 (2000)..

Kovsh, A. R. et al. InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency.Electron. Lett.38, 1104-1106 (2002)..

Maximov, M. V. et al. Light emitting devices based on quantum well-dots.Appl. Sci.10, 1038 (2020)..

Kryzhanovskaya, N. V. et al. Evaluation of energy-to-data ratio of quantum-dot microdisk lasers under direct modulation.J. Appl. Phys.126, 063107 (2019)..

Moiseev, E. I. et al. Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region.J. Phys. Conf. Ser.1124, 081048 (2018)..

Moiseev, E. I. et al. Comparative analysis of injection microdisk lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots.Semiconductors54, 263-267 (2020)..

Moiseev, E. et al. Highly efficient injection microdisk lasers based on quantum well-dots.Opt. Lett.43, 4554-4557 (2018)..

Adachi, S. Thermal properties. InGaAs and Related Materials: Bulk Semiconducting and Superlattice Properties, Ch. 3. (World Scientific, 1994).

Zhukov, A. E. et al. Impact of self-heating and elevated temperature on performance of quantum dot microdisk lasers.IEEE J. Quantum Electron.56, 2000908 (2020)..

Zhukov, A. E. et al. Ultimate lasing temperature of microdisk lasers.Semiconductors54, 677-681 (2020)..

Scott, J. W. et al. Modeling temperature effects and spatial hole burning to optimize vertical-cavity surface-emitting laser performance.IEEE J. Quantum Electron.29, 1295-1308 (1993)..

Nakwaski, W.&Osiński, M. On the thermal resistance of vertical-cavity surface-emitting lasers.Opt. Quantum Electron.29, 883-892 (1997)..

Al-Omari, A. N.&Lear, K. L. VCSELs with a self-aligned contact and copper-plated heatsink.IEEE Photon. Technol. Lett.17, 1767-1769 (2005)..

Baveja, P. P. et al. Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling.Opt. Express19, 15490-15505 (2011)..

Zubov, F. et al. High speed data transmission using directly modulated microdisk lasers based on InGaAs/GaAs quantum well-dots.Opt. Lett.44, 5442-5445 (2019)..

Kryzhanovskaya, N. V. et al. Direct modulation characteristics of microdisk lasers with InGaAs/GaAsquantum well-dots.Photonics Res.7, 664-668 (2019)..

Wan, Y. T. et al. Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability.Photonics Res.6, 776-781 (2018)..

Wan, Y. et al.On-chip detection from directly modulated quantum dot microring lasers on Si. 2018 Progress in Electromagnetics Research Symposium (PIERS - Toyama), 249-253 (2018).

Zhukov,A. E. et al. The effect of self-heating on the modulation characteristics of a microdisk laser.Tech. Phys. Lett.46, 515-519 (2020)..

Chen, T. R. et al. Very high modulation efficiency of ultftalow threshold current single quantum well InGaAs lasers.Electron. Lett.29, 1525-1526 (1993)..

Nagarajan, R. et al. Transport limits in high-speed quantum-well lasers: experiment and theory.IEEE Photon. Technol. Lett.4, 121-123 (1992)..

Talalaev, V. et al. Dynamics of broadband lasing cascade from a single dot-in-well InGaAs microdisk.Sci. Rep.9, 5635 (2019)..

Moser, P. et al. 81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects.Appl. Phys. Lett.98, 231106 (2011)..

Zhukov, A. E. et al. Energy consumption for high-frequency switching of a quantum-dot microdisk laser.Tech. Phys. Lett.45, 847-849 (2019)..

Yang, Y. D. et al. Direct-modulated waveguide-coupled microspiral disk lasers with spatially selective injection for on-chip optical interconnects.Opt. Express22, 824-838 (2014)..

Cornet, C., Léger, Y.&Robert, C. Laser integration challenges. InIntegrated Lasers on Silicon, Ch. 1. (London: ISTE Press, 2016).

Chen, S. M. et al. H. Electrically pumped continuous-wave Ⅲ-Ⅴ quantum dot lasers on silicon.Nat. Photon.10, 307-311 (2016)..

Liu, A. Y. et al. High performance continuous wave 1.3 μm quantum dot lasers on silicon.Appl. Phys. Lett.104, 041104 (2014)..

Liang, D. et al. Low threshold electrically-pumped hybrid silicon microring lasers.IEEE J. Sel. Top. Quantum Electron.17, 1528-1533 (2011)..

Tanabe, K., Watanabe, K.&Arakawa, Y. Ⅲ-Ⅴ/Si hybrid photonic devices by direct fusion bonding.Sci. Rep.2, 349 (2012)..

Zhang, C. et al. Thermal management of hybrid silicon ring lasers for high temperature operation.IEEE J. Sel. Top. Quantum Electron.21, 1502607 (2015)..

Zhukov, A. E. et al. InAs/GaAs quantum dot microlasers formed on silicon using monolithic and hybrid integration methods.Materials13, 2315 (2020)..

Zhukov, A. E. et al. Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon.Tech. Phys. Lett.46, 783-786 (2020)..

Choi, H. K., Wang, C. A.&Karam, N. H. GaAs-based diode lasers on Si with increased lifetime obtained by using strained InGaAs active layer.Appl. Phys. Lett.59, 2634-2635 (1991)..

Kazi, Z. I. et al. Realization of GaAs/AlGaAs lasers on Si substrates using epitaxial lateral overgrowth by metalorganic chemical vapor deposition.Jpn. J. Appl. Phys.40, 4903-4906 (2001)..

Krestnikov, I. et al. Reliability study of InAs/InGaAs quantum dot diode lasers.Electron. Lett.41, 1330-1331 (2005)..

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

暂无数据