Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Jinchai Li; Na Gao; Duanjun Cai; Wei Lin; Kai Huang; Shuping Li; Junyong Kang

doi:10.1038/s41377-021-00563-0

Go to Nature Website

Your Location：

Home >

Browse articles >

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Reviews

- Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes
- Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes
- LSA 2021年10卷第7期页码：1207-1226
- Affiliations：
  
  Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005, Xiamen, China
- Author bio：
  
  Duanjun Cai (dcai@xmu.edu.cn)
  Junyong Kang (jykang@xmu.edu.cn)
- Funds：
- DOI：10.1038/s41377-021-00563-0
  中图分类号：
- 纸质出版日期：2021-07-31，
  
  网络出版日期：2021-06-16，
  
  收稿日期：2020-12-10，
  
  修回日期：2021-04-25，
  
  录用日期：2021-05-24
- Accepted：
Scan QR Code
Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes[J]. LSA, 2021,10(7):1207-1226.

Li, J. C. et al. Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes. Light: Science & Applications, 10, 1207-1226 (2021).
Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes[J]. LSA, 2021,10(7):1207-1226. DOI： 10.1038/s41377-021-00563-0.

Li, J. C. et al. Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes. Light: Science & Applications, 10, 1207-1226 (2021). DOI： 10.1038/s41377-021-00563-0.

摘要

Abstract

As demonstrated during the COVID-19 pandemic

advanced deep ultraviolet (DUV) light sources (200–280 nm)

such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission

which further reveals their wide applications from biological

environmental

industrial to medical. However

the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications

which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here

we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition

we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.

关键词

Keywords

references

Lee, E. C. et al. The engines of SARS-CoV-2 spread.Science (80-. )370, 406–407 (2020)..

Aassve, A. et al. The COVID-19 pandemic and human fertility.Science (80-. )369, 370–371 (2020)..

Slifka, M. K.&Gao, L. N. Is presymptomatic spread a major contributor to COVID-19 transmission?Nat. Med.26, 1531–1533 (2020)..

He, X. et al. Temporal dynamics in viral shedding and transmissibility of COVID-19.Nat. Med.26, 672–675 (2020)..

Karia, R. et al. COVID-19 and its modes of transmission.SN Compr. Clin. Med.2, 1798–1801 (2020)..

Santarpia, J. L. et al. Aerosol and surface contamination of SARS-CoV-2 observed in quarantine and isolation care.Sci. Rep.10, 12732 (2020)..

Wang, L. et al. Inference of person-to-person transmission of COVID-19 reveals hidden super-spreading events during the early outbreak phase.Nat. Commun.11, 5006 (2020)..

Shi, Y. F. et al. COVID-19 infection: the perspectives on immune responses.Cell Death Differ.27, 1451–1454 (2020)..

Wiersinga, W. J. et al. Pathophysiology, transmission, diagnosis, and treatment of Coronavirus Disease 2019 (COVID-19).JAMA324, 782 (2020)..

Van Bavel, J. J. et al. Using social and behavioural science to support COVID-19 pandemic response.Nat. Hum. Behav.4, 460–471 (2020)..

Yang, P. H.&Wang, X. L. COVID-19: a new challenge for human beings.Cell. Mol. Immunol.17, 555–557 (2020)..

Pradhan, D. et al. A review of current interventions for COVID-19 prevention.Arch. Med. Res.51, 363–374 (2020)..

Kampf, G., Todt, D., Pfaender, S.&Steinmann, E. Persistence of coronaviruses on inanimate surfaces and their inactivation with biocidal agents.J. Hospital Infect.104, 246–251 (2020)..

Inagaki,H. et al. Rapid inactivation of SARS-CoV-2 with deep-UV LED irradiation.Emerg. Microbes Infect.9, 1744–1747 (2020)..

Raeiszadeh, M.&Adeli, B. A. Critical review on ultraviolet disinfection systems against COVID-19 outbreak: applicability, validation, and safety considerations.ACS Photonics7, 2941–2951 (2020)..

Xiang, Y. et al. RNA m6A methylation regulates the ultraviolet-induced DNAdamage response.Nature543, 573–576 (2017)..

Wurtmann, E. J.&Wolin, S. L. RNA under attack: Cellular handling of RNA damage.Crit. Rev. Biochem. Mol. Biol.44, 34–49 (2009)..

Gustavsson, T., Improta, R.&Markovitsi, D. DNA/RNA: building blocks of life under UV irradiation.J. Phys. Chem. Lett.1, 2025–2030 (2010)..

Aoyagi, Y. et al. Inactivation of bacterial viruses in water using deep ultraviolet semiconductor light-emitting diode.J. Environ. Eng.137, 1215–1218 (2011)..

Asif Khan, M. et al. III–nitride UV devices.Jpn. J. Appl. Phys.44, 7191–7206 (2005)..

Laleyan, D. A. et al. AlN/h-BN heterostructures for Mg dopant-free deep ultraviolet photonics.Nano Lett.17, 3738–3743 (2017)..

Park, J. -S. et al. Review—Group III-nitride-based ultraviolet light-emitting diodes: ways of increasing external quantum efficiency.ECS J. Solid State Sci. Technol.6, Q42–Q52 (2017)..

Grandusky, J. R. et al. High output power from 260 nm pseudomorphic ultraviolet light-emitting diodes with improved thermal performance.Appl. Phys. Express4, 082101 (2011)..

Shatalov, M. et al. AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10%.Appl. Phys. Express5, 082101 (2012)..

Huang, Z. X. et al. Enhanced emission of deep ultraviolet light-emitting diodes through using work function tunable Cu nanowires as the top transparent electrode.J. Phys. Chem. Lett.11, 2559–2569 (2020)..

Buonanno, M. et al. Germicidal efficacy and mammalian skin safety of 222-nm UV light.Radiat. Res.187, 493–501 (2017)..

Buonanno, M. et al. Far-UVC light (222 nm) efficiently and safely inactivates airbornehuman coronaviruses.Sci. Rep.10, 10285 (2020)..

Takano, T. et al. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency.Appl. Phys. Express10, 031002 (2017)..

Kneissl, M.&Rass, J.III-nitride Ultraviolet Emitters: Technology and Applications442 (Springer, 2016).

Liu, D. et al. 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection.Appl. Phys. Lett.112, 081101 (2018)..

Moe, C. G. et al. AlGaN light-emitting diodes on AlN substrates emitting at 230 nm.Phys. Status Solidi A215, 1700660 (2018)..

Kneissl, M. et al. The emergence and prospects of deep-ultraviolet light-emitting diode technologies.Nat. Photonics13, 233–244 (2019)..

Imura, M. et al. Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy.Appl. Phys. Lett.89, 221901 (2006)..

Chen, J. et al. Nonlinear local-field corrections to the optical second-harmonic susceptibility of insulating crystals.Phys. Rev. B56, 1787–1799 (1997)..

Cai, D. J., Kang, J. Y.&Guo, G. Y. Microscopic origin of light emission from AlyGa1−yN/GaN superlattices: band profiles and active site.Phys. Rev. B80, 045311 (2009)..

Takeuchi, T. et al. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect.Appl. Phys. Lett.73, 1691–1693 (1998)..

Soomro, A. M. et al. Modified pulse growth and misfit strain release of an AlN heteroepilayer with a Mg–Si codoping pair by MOCVD.J. Phys. D49, 115110 (2016)..

Klimov, V. I. Optical gain and stimulated emission in nanocrystal quantum dots.Science (80-. )290, 314–317 (2000)..

Ellingson, R. J. et al. Highly efficient multiple exciton generation in colloidal PbSe and PbS quantum dots.Nano Lett.5, 865–871 (2005)..

Stampfl, C.&Van de Walle, C. G. Theoretical investigation of native defects, impurities, and complexes in aluminum nitride.Phys. Rev. B65, 155212 (2002)..

Nam, K. B. et al. Mg acceptor level in AlN probed by deep ultraviolet photoluminescence.Appl. Phys. Lett.83, 878–880 (2003)..

Wang, S. et al. Ultrahigh degree of optical polarization above 80% in AlGaN-based deep-ultraviolet LED with moth-eye microstructure.ACS Photonics5, 3534–3540 (2018)..

Nam, K. B. et al. Unique optical properties of AlGaN alloys and related ultraviolet emitters.Appl. Phys. Lett.84, 5264–5266 (2004)..

Zhang, J., Zhao, H. P.&Tansu, N. Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers.Appl. Phys. Lett.97, 111105 (2010)..

Lin, B. C. et al. Performance enhancementof GaN-based flip-chip ultraviolet light-emitting diodes with a RPD AlN nucleation layer on patterned sapphire substrate.Optical Mater. Express4, 1632 (2014)..

Lee, C. Y. et al. Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate.Nanoscale Res. Lett.9, 505 (2014)..

Miyake, H. et al. Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire.Appl. Phys. Express9, 025501 (2016)..

Lee, D. et al. Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates.Appl. Phys. Lett.110, 191103 (2017)..

Kim, J. et al. Growth and characterization of high quality AlN using combined structure of low temperature buffer and superlattices for applications in the deep ultraviolet.Jpn. J. Appl. Phys.54, 081001 (2015)..

Jain, R. et al. Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes.Appl. Phys. Lett.93, 051113 (2008)..

Huang, C. Y. et al. High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes.AIP Adv.7, 055110 (2017)..

Wang, T. Y. et al. 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering.Sci. Rep.7, 14422 (2017)..

Zhang, J. P. et al. AlGaN deep-ultraviolet light-emitting diodes.Jpn. J. Appl. Phys.44, 7250–7253 (2005)..

Al tahtamouni, T. M., Lin, J. Y.&Jiang, H. X. Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes.J. Appl. Phys.113, 123501 (2013)..

Yan, J. C. et al. AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE.J. Cryst. Growth414, 254–257 (2015)..

Hirayama, H. et al. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire.Phys. Status Solidi A206, 1176–1182 (2009)..

Zhuang, Q. Q. et al. Defect suppression in AlN epilayer using hierarchical growth units.J. Phys. Chem. C117, 14158–14164 (2013)..

Asif Khan, M. et al. GaN/AlN digital alloy short‐period superlattices by switched atomic layer metalorganic chemical vapor deposition.Appl. Phys. Lett.63, 3470–3472 (1993)..

Rodak, L. E.&Korakakis, D. Aluminum gallium nitride alloys grown via metalorganic vapor-phase epitaxy using a digital growth technique.J. Electron. Mater.40, 388–393 (2011)..

Choi, S. Kim, et al. Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1−xN layers with AlN and AlyGa1−yN monolayers.J. Cryst. Growth311, 3252–3256 (2009)..

Nikishin, S. A., Holtz, M.&Temkin, H. Digital alloys of AlN/AlGaN for deep UV light emitting diodes.Jpn. J. Appl. Phys.44, 7221–7226 (2005)..

Nam, K. B. et al. Growth and deep ultraviolet picosecond time-resolved photoluminescence studies of AlN/GaN multiple quantum wells.Appl. Phys. Lett.78, 3690–3692 (2001)..

Rodak, L. E.&Korakakis, D. Influence of the interface on growth rates in AlN/GaN short period superlattices via metal organic vapor phase epitaxy.Appl. Phys. Lett.99, 201903 (2011)..

Taniyasu, Y.&Kasu, M. Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices.Appl. Phys. Lett.99, 251112 (2011)..

Kuchuk, A. V. et al. Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices.Nanotechnology25, 245602 (2014)..

Pan, C. Q. et al. Growth of millimeter wave AlN/GaN heterostructures by MOCVD.J. Cryst. Growth531, 125265 (2020)..

Storm, D. F. et al. Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire.J. Vac. Sci. Technol. B38, 032214 (2020)..

Zheng, X. X. et al. Effects of the growth temperature on structural and electrical properties of AlN/GaN heterostructures grown by metal organic chemical vapor deposition.Thin Solid Films709, 138228 (2020)..

Jmerik, V. N. et al. Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring.J. Cryst. Growth354, 188–192 (2012)..

Gao, N. et al. Quantum state engineering with ultra-short-period (AlN)m/(GaN)nsuperlattices for narrowband deep-ultraviolet detection.Nanoscale6, 14733–14739 (2014)..

Gao, N. et al. Integral monolayer-scale featured digital-alloyed AlN/GaN superlattices using hierarchical growth units.Cryst. Growth Des.19, 1720–1727 (2019)..

Rong, X. et al. High-output-power ultraviolet light source from quasi-2D GaN quantum structure.Adv. Mater.28, 7978–7983 (2016)..

Islam, S. M. et al. Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures.Appl. Phys. Lett.111, 091104 (2017)..

Islam, S. M. et al. MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures.Appl. Phys. Lett.110, 041108 (2017)..

Shan, M. C. et al. Deep UV laser at 249 nm based on GaN quantum wells.ACS Photonics6, 2387–2391 (2019)..

Toropov, A. A. et al. Strongly confined excitons in GaN/AlN nanostructures with atomically thin GaN layers for efficient light emission in deep-ultraviolet.Nano Lett.20, 158–165 (2020)..

Della Sala, F. et al. Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures.Appl. Phys. Lett.74, 2002–2004 (1999)..

Zheleva, T. S. et al. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures.Appl. Phys. Lett.71, 2472–2474 (1997)..

Sakai, A., Sunakawa, H.&Usui, A. Defect structure in selectively grown GaN films with low threading dislocation density.Appl. Phys. Lett.71, 2259–2261 (1997)..

Usui, A. et al. Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy.Jpn. J. Appl. Phys.36, L899–L902 (1997)..

Cai, D. J. et al. High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN.Appl. Phys. Lett.86, 211917 (2005)..

Cai, D. J. et al. Band-edge emission enhancement by longitudinal stress field in GaN.Appl. Phys. Lett.93, 081908 (2008)..

Adivarahan, V. et al. Robust 290 nm emission light emitting diodes over pulsedlaterally overgrown AlN.Jpn. J. Appl. Phys.46, L877–L879 (2007)..

Dong, P. et al. 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates.Appl. Phys. Lett.102, 241113 (2013)..

Long, H. L. et al. High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD.Appl. Phys. Lett.114, 042101 (2019)..

Hagedorn, S. et al. Improving AlN crystal quality and strain management on nanopatterned sapphire substrates by high‐temperature annealing for UVC light‐emitting diodes.Phys. Status Solidi A217, 1900796 (2020)..

Zhang, J. P. et al. Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management.Appl. Phys. Lett.80, 3542–3544 (2002)..

Niikura, E. et al. Improvement of crystal quality of AlN and AlGaN epitaxial layers by controlling the strain with the (AlN/GaN) multi-buffer layer.J. Cryst. Growth298, 345–348 (2007)..

Wang, L. F. et al. Monolayer hexagonal boron nitride films with large domain size and clean interface for enhancing the mobility of graphene-based field-effect transistors.Adv. Mater.26, 1559–1564 (2014)..

Park, J. H. et al. Large-area monolayer hexagonal boron nitride on Pt foil.ACS Nano8, 8520–8528 (2014)..

Bae, S. et al. Roll-to-roll production of 30-inch graphene films for transparent electrodes.Nat. Nanotechnol.5, 574–578 (2010)..

Kobayashi, Y. et al. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices.Nature484, 223–227 (2012)..

Wu, C. P. et al. Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer.Sci. Rep.6, 34766 (2016)..

Chen, Z. L. et al. Improved epitaxy of AlN film for deep‐ultraviolet light‐emitting diodes enabled by graphene.Adv. Mater.31, 1807345 (2019)..

Qi, Y. et al. Fast growth of strain-free AlN on graphene-buffered sapphire.J. Am. Chem. Soc.140, 11935–11941 (2018)..

Chang, H. L. et al. Quasi‐2D growth of aluminum nitride film on graphene for boosting deep ultraviolet light‐emitting diodes.Adv. Sci.7, 2001272 (2020)..

Northrup, J. E. et al. Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells.Appl. Phys. Lett.100, 021101 (2012)..

Bryan, Z. et al. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates.Appl. Phys. Lett.106, 232101 (2015)..

Reich, C. et al. Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes.Appl. Phys. Lett.107, 142101 (2015)..

Xu, H. Q. et al. Strain modulated nanostructure patterned AlGaN-based deep ultraviolet multiple-quantum-wells for polarization control and light extraction efficiency enhancement.Nanotechnology30, 435202 (2019)..

Long, H. L. et al. Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD.Opt. Express26, 680–686 (2018)..

Zhang, S. X. et al. Compressive strain induced enhancement of transverse-electric polarized ultraviolet light emission for AlGaN quantum wells.Superlattices Microstructures150, 106749 (2021)..

Zheng, J. J. et al. Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs.RSC Adv.7, 55157–55162 (2017)..

Gao, N. et al. Strain engineering of digitally alloyed AlN/GaN nanorods for far-UVC emission as short as 220 nm.Opt. Mater. Express11, 1282 (2021)..

Murotani, H. et al. Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells.Appl. Phys. Lett.101, 042110 (2012)..

Banal, R. G., Funato, M.&Kawakami, Y. Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region.Appl. Phys. Lett.99, 011902 (2011)..

Bryan, Z. et al. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates.Appl. Phys. Lett.106, 142107 (2015)..

Lin, W. et al. Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)nsuperlattices.Laser Photonics Rev.7, 572–579 (2013)..

Neuschl, B. et al. Composition dependent valence band order in c-oriented wurtzite AlGaN layers.J. Appl. Phys.116, 113506 (2014)..

Kawanishi, H., Senuma, M.&Nukui, T. TM-mode lasing and anisotropic polarization properties of AlGaN multiple quantum well lasers in deep-ultraviolet spectral region. InProceedings of SPIE 6473, Gallium Nitride Materials and Devices II(eds. Morkoc, H.&Litton, C. W. ) 20–25 January 2007, San Jose, CA, USA (SPIE, 2007).

Chen, L. et al. Abnormal radiative interband transitions in high-Al-content AlGaN quantum wells induced by polarized orbitals.ACS Photonics4, 2197–2202 (2017)..

Hirayama, H. et al. Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer.Appl. Phys. Express3, 031002 (2010)..

Chen, L. et al. Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling.Light: Sci. Appl.9, 104 (2020)..

Guo, H. Z. et al.Copper nanowires as fully transparent conductive electrodes.Sci. Rep.3, 2323 (2013)..

Wang, H. C. et al. One-pot synthesis of superfine core–shell Cu@metal nanowires for highly tenacious transparent LED dimmer.ACS Appl. Mater. Interfaces8, 28709–28717 (2016)..

Kim, H. D. et al. A universal method of producing transparent electrodes using wide-bandgap materials.Adv. Funct. Mater.24, 1575–1581 (2014)..

Kim, D. Y. et al. Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission.Light: Sci. Appl.4, e263–e263 (2015)..

Barnes, W. L., Dereux, A.&Ebbesen, T. W. Surface plasmon subwavelength optics.Nature424, 824–830 (2003)..

Kwon, M. K. et al. Surface-plasmon-enhanced light-emitting diodes.Adv. Mater.20, 1253–1257 (2008)..

Okamoto, K. et al. Surface-plasmon-enhanced light emitters based on InGaN quantum wells.Nat. Mater.3, 601–605 (2004)..

Yeh, D. M. et al. Localized surface plasmon-induced emission enhancement of a green light-emitting diode.Nanotechnology19, 345201 (2008)..

Lu, C. H. et al. Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array.Adv. Funct. Mater.21, 4719–4723 (2011)..

Lin, J. et al. Surface plasmon enhanced UV emission in AlGaN/GaN quantum well.Appl. Phys. Lett.97, 221104 (2010)..

Barnes, W. L. Surface plasmon–polariton length scales: a route to sub-wavelength optics.J. Opt. A8, S87–S93 (2006)..

Gao, N. et al. Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells.Sci. Rep.2, 816 (2012)..

Huang, K. et al. Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons.Sci. Rep.4, 4380 (2015)..

Yin, J. et al. Surface plasmon enhanced hot exciton emission in deep UV-emitting AlGaN multiple quantum wells.Adv. Optical Mater.2, 451–458 (2014)..

Su, C. Y. et al. Enhancement of emission efficiency of deep-ultraviolet AlGaN Quantum wells through surface plasmon coupling with an Al nanograting structure.Plasmonics13, 863–872 (2018)..

Yang, Y. F. et al. Surface plasmon coupling with radiating dipole for enhancing the emission efficiency and light extraction of a deep ultraviolet light emitting diode.Plasmonics15, 881–887 (2020)..

Lee, J. W. et al. AlGaN deep-ultraviolet light-emitting diodes with localized surface plasmon resonance by a high-density array of 40 nm Al nanoparticles.ACS Appl. Mater. Interfaces12, 36339–36346 (2020)..

Pernot, C. et al. Improved efficiency of 255–280 nm AlGaN-based light-emitting diodes.Appl. Phys. Express3, 061004 (2010)..

Kim, B. J. et al. Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays.Thin Solid Films517, 2742–2744 (2009)..

Khizar, M. et al. Nitride deep-ultraviolet light-emitting diodes with microlens array.Appl. Phys. Lett.86, 173504 (2005)..

Yan, X. et al. Deep-ultraviolet tailored- and low-refractive index antireflection coatings for light-extraction enhancement of light emitting diodes.J. Appl. Phys.113, 163105 (2013)..

Lobo, N. et al. Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector.Appl. Phys. Lett.96, 081109 (2010)..

Guo, Y. N. et al. Enhancement of light extraction on AlGaN-based deep-ultraviolet light-emitting diodes using a sidewall reflection method. In2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)(ed Li, J. M. ) 15–17 November 2016; Beijing, China (IEEE, 2016).

Lee, J. W. et al. Arrays of truncated Cone AlGaN deep-ultraviolet light-emitting diodes facilitating efficient outcoupling of in-plane emission.ACS Photonics3, 2030–2034 (2016)..

Liu, X. H. et al. Improving the efficiency of transverse magnetic polarized emission from AlGaN based LEDs by using nanowire photonic crystal.IEEE Photonics J.10, 4501211 (2018)..

Ryu, H. Y. Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures.Nanoscale Res. Lett.9, 58 (2014)..

Djavid, M.&Mi, Z. T. Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures.Appl. Phys. Lett.108, 051102 (2016)..

Dong, P. et al. Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes.Opt. Express22, A320–A327 (2014)..

Bernardini, F., Fiorentini, V.&Vanderbilt, D. Spontaneous polarization and piezoelectric constants of III–V nitrides.Phys. Rev. B56, R10024–R10027 (1997)..

Takeuchi, T. et al. Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells.Jpn. J. Appl. Phys.36, L382–L385 (1997)..

Fiorentini, V. et al. Effects of macroscopic polarization in III–V nitride multiple quantum wells.Phys. Rev. B60, 8849–8858 (1999)..

Cingolani, R. et al. Spontaneous polarization and piezoelectric field in GaN/Al0.15Ga0.85N quantum wells: impact on the optical spectra.Phys. Rev. B61, 2711–2715 (2000)..

Franssen, G. et al. Fully-screened polarization-induced electric fields in blue/violet InGaN/GaN light-emitting devices grown on bulk GaN.Appl. Phys. Lett.87, 041109 (2005)..

Deguchi, T. et al. Luminescence spectra from InGaN multiquantum wells heavily doped with Si.Appl. Phys. Lett.72, 3329–3331 (1998)..

Huang, M. F.&Lu, T. H. Optimization of the active-layer structure for the deep-UV AlGaN light-emitting diodes.IEEE J. Quantum Electron.42, 820–826 (2006)..

Zhuo, X. L. et al. Band engineering of GaN/AlN quantum wells by Si dopants.J. Appl. Phys.115, 124305 (2014)..

Hirayama, H. et al. 227 nm AlGaN light-emitting diode with 0.15 mW output power realized using a thin quantum well and AlN buffer with reduced threading dislocation density.Appl. Phys. Express1, 051101 (2008)..

Tsai, M. C. et al. Effect of spontaneous and piezoelectric polarization on optical characteristics of ultraviolet AlGaInN light-emitting diodes.Opt. Commun.282, 1589–1592 (2009)..

Schubert, E. F. et al. Enhancement of deep acceptor activation in semiconductors by superlattice doping.Appl. Phys. Lett.69, 3737–3739 (1996)..

Kozodoy, P. et al. Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices.Appl. Phys. Lett.74, 3681–3683 (1999)..

Waldron, E. L., Graff, J. W.&Schubert, E. F. Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices.Appl. Phys. Lett.79, 2737–2739 (2001)..

Li, J. et al. Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-δ-codoped AlxGa1−xN/AlyGa1−yN superlattices.Appl. Phys. Lett.95, 151113 (2009)..

Zheng, T. C. et al. Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices.Sci. Rep.6, 21897 (2016)..

Simon, J. et al. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures.Science (80-. )327, 60–64 (2010)..

Zhang, L. et al. Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure.Appl. Phys. Lett.97, 062103 (2010)..

Li, S. B. et al. Polarization induced hole doping in graded AlxGa1−xN (x= 0.7–1) layer grown by molecular beam epitaxy.Appl. Phys. Lett.102, 062108 (2013)..

Yan, L. et al. Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition.Appl. Phys. Lett.112, 182104 (2018)..

Zhang, Z. Y. et al. A 271.8 nm deep-ultraviolet laser diode for room temperature operation.Appl. Phys. Express12, 124003 (2019)..

Kim, M. H. et al. Origin of efficiency droop in GaN-based light-emitting diodes.Appl. Phys. Lett.91, 183507 (2007)..

Park, J. H. et al. Fundamental limitations of wide-bandgap semiconductors for light-emitting diodes.ACS Energy Lett.3, 655–662 (2018)..

Mehnke, F. et al. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes.Appl. Phys. Lett.105, 051113 (2014)..

Liu, S. Q. et al. Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer.Appl. Phys. A122, 527 (2016)..

Zhang, Z. H. et al. Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes.ACS Photonics4, 1846–1850 (2017)..

Zhang, Z. H. et al. Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes.Photonics Res.7, B1–B6 (2019)..

Lang, J. et al. Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer.Opt. Express27, A1458–A1466 (2019)..

Wang, X., Sun, H. Q.&Guo, Z. Y. Improvement of AlGaN-based deep ultraviolet light-emitting diodes by using a graded AlGaN superlattice hole reservoir layer.Optical Mater.86, 133–137 (2018)..

Kang, Y. et al. Efficiency droop suppression and light output power enhancement of deep ultraviolet light-emitting diode by incorporating inverted-V-shaped quantum barriers.IEEE Trans. Electron Devices67, 4958–4962 (2020)..

Shatalov, M. et al. Lateral Current Crowding In Deep UV light emitting diodes over sapphire substrates.Jpn. J. Appl. Phys.41, 5083–5087 (2002)..

Adivarahan, V. et al. High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design.Appl. Phys. Lett.85, 1838–1840 (2004)..

Adivarahan, V. et al. Vertical injection thin film deep ultraviolet light emitting diodes with AlGaN multiple-quantum wells active region.Appl. Phys. Express2, 092102 (2009)..

Che, J. M. et al. On the p-AlGaN/n-AlGaN/p-AlGaN current spreading layer for AlGaN-based Deep Ultraviolet Light-emitting Diodes.Nanoscale Res. Lett.13, 355 (2018)..

Chu, C. S. et al. Modulating the layer resistivity by band-engineering to improve the current spreading for DUV LEDs.IEEE Photonics Technol. Lett.31, 1201–1204 (2019)..

Zhang, S. et al. Enhanced wall-plug efficiency in AlGaN-based deep-ultraviolet LED via a novel honeycomb hole-shaped structure.IEEE Trans. Electron Devices66, 2997–3002 (2019)..

Inoue, S. I., Tamari, N.&Taniguchi, M. 150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm.Appl. Phys. Lett.110, 141106 (2017)..

Taniyasu, Y.&Kasu, M. Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation.Appl. Phys. Lett.96, 221110 (2010)..

Grandusky, J. R. et al. 270 nm Pseudomorphic ultraviolet light-emitting diodes with over 60 mW continuous wave output power.Appl. Phys. Express6, 032101 (2013)..

Mino, T. et al. Highly-uniform 260 nm-band AlGaN-based deep-ultraviolet light-emitting diodes developed by 2-inch×3 MOVPE system.Phys. Status Solidi C9, 749–752 (2012)..

Dong, P. et al. AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency.J. Cryst. Growth395, 9–13 (2014)..

Xu, F. J. et al. Realization of low dislocation density AlN on a small-coalescence-area nano-patterned sapphire substrate.CrystEngComm21, 2490–2494 (2019)..

Yoshikawa, A.et al. Improve efficiency and long lifetime UVC LEDs with wavelengths between 230 and 237 nm.Appl. Phys. Express13, 022001 (2020)..

Kinoshita, T. et al. Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy.Appl. Phys. Express6, 092103 (2013)..

Fujioka, A. et al. Improvement in output power of 280-nm deep ultraviolet light-emitting diode by using AlGaN multi quantum wells.Appl. Phys. Express3, 041001 (2010)..

Hirayama, H. et al. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes.Jpn. J. Appl. Phys.53, 100209 (2014)..

Ban, K. et al. Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells.Appl. Phys. Express4, 052101 (2011)..

Zhang, L. S. et al. High-power bottom-emitting vertical-cavity surface-emitting lasers under continuous-wave, quasi-continuous-wave, and pulsed operation.Appl. Phys. Express4, 052102 (2011)..

Hrong, R. H. et al. Transparent electrode design for AlGaN deep-ultraviolet light-emitting diodes.Opt. Express25, 32206 (2017)..

Li, D. B. et al. AlGaN photonics: recent advances in materials and ultraviolet devices.Adv. Opt. Photonics10, 43–110 (2018)..

Bhattacharyya, A. et al. Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency.Appl. Phys. Lett.94, 181907 (2009)..

Nagai, S. et al. Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study.Jpn. J. Appl. Phys.55, 082101 (2016)..

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

“光疫苗”：氮化物深紫外LED

暂无数据