Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

Hongliang Chang; Zhetong Liu; Shenyuan Yang; Yaqi Gao; Jingyuan Shan; Bingyao Liu; Jingyu Sun; Zhaolong Chen; Jianchang Yan; Zhiqiang Liu; Junxi Wang; Peng Gao; Jinmin Li; Zhongfan Liu; Tongbo Wei

doi:10.1038/s41377-022-00756-1

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Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

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- Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode
- Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode
- LSA 2022年11卷第5期页码：808-819
- Affiliations：
  
  1.Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
  2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
  3.Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
  4.Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
  5.Beijing graphene institute (BGI), 100095, Beijing, China
  6.Academy for Advanced Interdisciplinary Studies, Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China
  7.State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
- Author bio：
  
  Peng Gao (p-gao@pku.edu.cn)
  Jinmin Li (jmli@semi.ac.cn)
  Zhongfan Liu (zfliu@pku.edu.cn)
  Tongbo Wei (tbwei@semi.ac.cn)
- Funds：
- DOI：10.1038/s41377-022-00756-1
  中图分类号：
- 纸质出版日期：2022-05-31，
  
  网络出版日期：2022-04-07，
  
  收稿日期：2022-01-12，
  
  修回日期：2022-02-24，
  
  录用日期：2022-02-28
- Accepted：
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Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode[J]. LSA, 2022,11(5):808-819.

Chang, H. L. et al. Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode. Light: Science & Applications, 11, 808-819 (2022).
Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode[J]. LSA, 2022,11(5):808-819. DOI： 10.1038/s41377-022-00756-1.

Chang, H. L. et al. Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode. Light: Science & Applications, 11, 808-819 (2022). DOI： 10.1038/s41377-022-00756-1.

摘要

Abstract

The energy-efficient deep ultraviolet (DUV) optoelectronic devices suffer from critical issues associated with the poor quality and large strain of nitride material system caused by the inherent mismatch of heteroepitaxy. In this work

we have prepared the strain-free AlN film with low dislocation density (DD) by graphene (Gr)-driving strain-pre-store engineering and a unique mechanism of strain-relaxation in quasi-van der Waals (QvdW) epitaxy is presented. The DD in AlN epilayer with Gr exhibits an anomalous sawtooth-like evolution during the whole epitaxy process. Gr can help to enable the annihilation of the dislocations originated from the interface between AlN and Gr/sapphire by impelling a lateral two-dimensional growth mode. Remarkably

it can induce AlN epilayer to pre-store sufficient tensile strain during the early growth stage and thus compensate the compressive strain caused by hetero-mismatch. Therefore

the low-strain state of the DUV light-emitting diode (DUV-LED) epitaxial structure is realized on the strain-free AlN template with Gr. Furthermore

the DUV-LED with Gr demonstrate 2.1 times enhancement of light output power and a better stability of luminous wavelength compared to that on bare sapphire. An in-depth understanding of this work reveals diverse beneficial impacts of Gr on nitride growth and provides a novel strategy of relaxing the vital requirements of hetero-mismatch in conventional heteroepitaxy.

关键词

Keywords

references

Taniyasu, Y., Kasu, M.&Makimoto, T. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.Nature441, 325–328 (2006)..

Li, D. B. et al. AlGaN photonics: recent advances in materials and ultraviolet devices.Adv. Opt. Photonics10, 43–110 (2018)..

Li, J. C. et al. Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes.Light.: Sci. Appl.10, 129 (2021)..

SaifAddin, B. K. et al. AlGaN deep-ultraviolet light-emitting diodes grown on SiC substrates.ACS Photonics7, 554–561 (2020)..

Laleyan, D. A. et al. AlN/h-BN Heterostructures for Mg dopant-free deep ultraviolet photonics.Nano Lett.17, 3738–3743 (2017)..

Chang, H. L. et al. Quasi-2D growth of aluminum nitride film on graphene for boosting deep ultraviolet light-emitting diodes.Adv. Sci.7, 2001272 (2020)..

Wei, T. B. et al. GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy.Opt. Lett.45, 121–124 (2020)..

Khan, A., Balakrishnan, K.&Katona, T. Ultraviolet light-emitting diodes based on group three nitrides.Nat. Photonics2, 77–84 (2008)..

Guo, L. et al. Ultraviolet communication technique and its application.J. Semiconductors42, 081801 (2021)..

Kneissl, M. et al. The emergence and prospects of deep-ultraviolet light-emitting diode technologies.Nat. Photonics13, 233–244 (2019)..

Bryan, I. et al. Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD.Appl. Phys. Lett.112, 062102 (2018)..

Sui, J. E. et al. Mechanism ofa-AlN surface morphology evolution by high temperature annealing.Chin. J. Lumin.42, 810–817 (2021)..

Monti, D. et al. Defect-related degradation of AlGaN-based UV-B LEDs.IEEE Trans. Electron Devices64, 200–205 (2017)..

Khan, M. A. et al. External quantum efficiency of 6.5% at 300 nm emission and 4.7% at 310 nm emission on bare wafer of AlGaN-based UVB LEDs.ACS Appl. Electron. Mater.2, 1892–1907 (2020)..

Ruschel, J. et al. Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities.Appl. Phys. Lett.117, 241104 (2020)..

Shatalov, M. et al. AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10%.Appl. Phys. Express5, 082101 (2012)..

Zhao, J. G. et al. High internal quantum efficiency of nonpolara-plane AlGaN-based multiple quantum wells grown onr-plane sapphire substrate.ACS Photonics5, 1903–1906 (2018)..

Jain, S. et al. III–nitrides: growth, characterization, and properties.J. Appl. Phys.87, 965–1006 (2000)..

Inoue, S. I. et al. Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure.Appl. Phys. Lett.106, 131104 (2015)..

Liu, S. F. et al. Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD.J. Semiconductors42, 122804 (2021)..

Long, H. J. et al. High quality 10.6 μm AIN grown on pyramidal patterned sapphire substrate by MOCVD.Appl. Phys. Lett.114, 042101 (2019)..

Le, B. H. et al. Controlled coalescence of AlGaN nanowire arrays: an architecture for nearly dislocation-free planar ultraviolet photonic device applications.Adv. Mater.28, 8446–8454 (2016)..

Chang, H. L. et al. Graphene-induced crystal-healing of AlN film by thermal annealing for deep ultraviolet light-emitting diodes.Appl. Phys. Lett.117, 181103 (2020)..

Xie, N. et al. Stress evolution in AlN growth on nano-patterned sapphire substrates.Appl. Phys. Express13, 015504 (2020)..

Bae, S. H. et al. Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy.Nat. Nanotechnol.15, 272–276 (2020)..

Sun, Q. et al. GaN-on-Si blue/white LEDs: epitaxy, chip, and package.J. Semiconductors37, 044006 (2016)..

Jia, Y. Q. et al. Transferable GaN enabled by selective nucleation of AlN on graphene for high-brightness violet light-emitting diodes.Adv. Optical Mater.8, 1901632 (2020)..

Bae, S. H. et al. Integration of bulk materials with two-dimensional materials for physical coupling and applications.Nat. Mater.18, 550–560 (2019)..

Kobayashi, Y. et al. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices.Nature484, 223–227 (2012)..

Kim, H. et al. Role of transferred graphene on atomic interaction of GaAs for remote epitaxy.J. Appl. Phys.130, 174901 (2021)..

Kong, W. et al. Polarity governs atomic interaction through two-dimensional materials.Nat. Mater.17, 999–1004 (2018)..

Liang, D. D. et al. Quasi van der Waals epitaxy nitride materials and devices on two dimension materials.Nano Energy69, 104463 (2020)..

Yu, Y. et al. Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes.Light.: Sci. Appl.10, 117 (2021)..

Chang, H. L. et al. Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate.Appl. Phys. Lett.114, 091107 (2019)..

Chan, K. T., Neaton, J. B.&Cohen, M. L. First-principles study of metal adatom adsorption on graphene.Phys. Rev. B77, 235430 (2008)..

Kim, J. et al. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene.Nat. Commun.5, 4836 (2014)..

Chung, K. et al. Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices.Science330, 655–657 (2010)..

Chen, Z. L. et al. Improved Epitaxy of AlN Film for deep-ultraviolet light-emitting diodes enabled by graphene.Adv. Mater.31, 1807345 (2019)..

Dou, Z. P. et al. Atomic mechanism of strong interactions at the graphene/sapphire interface.Nat. Commun.10, 5013 (2019)..

Sun, J. Y. et al. Direct chemical vapor deposition-derived graphene glasses targeting wide ranged applications.Nano Lett.15, 5846–5854 (2015)..

Ni, Z. H. et al. Raman spectroscopy and imaging of graphene.Nano Res.1, 273–291 (2008)..

Cançado, L. G. et al. Quantifying defects in graphene via Raman spectroscopy at different excitation energies.Nano Lett.11, 3190 (2011)..

Heinke, H. et al. X-ray diffraction analysis of the defect structure in epitaxial GaN.Appl. Phys. Lett.77, 2145–2147 (2000)..

Srikant, V., Speck, J. S.&Clarke, D. R. Mosaic structure in epitaxial thin films having large lattice mismatch.J. Appl. Phys.82, 4286–4295 (1997)..

Lughi, V.&Clarke, D. R. Defect and stress characterization of AlN films by Raman spectroscopy.Appl. Phys. Lett.89, 241911 (2006)..

Pereira, S. et al. Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping.Appl. Phys. Lett.80, 3913–3915 (2002)..

Yim, W. M.&Paff, R. J. Thermal expansion of AlN, sapphire, and silicon.J. Appl. Phys.45, 1456 (1974)..

Sheldon, B. W. et al. Steady-state tensile stresses during the growth of polycrystalline films.Acta Materialia55, 4973–4982 (2007)..

Kachkanov, V. et al. InGaN epilayer characterization by microfocused x-ray reciprocal space mapping.Appl. Phys. Lett.99, 181909 (2011)..

Mendez, E. E. et al. Effect of an electric field on the luminescence of GaAs quantum wells.Phys. Rev. B26, 7101–7104 (1982)..

Thomsen, M. et al. Spontaneous polarization field in polar and nonpolar GaInN/GaN quantum well structures.Phys. Status Solidi B248, 627–631 (2011)..

Kresse, G.&Hafner, J. Ab initio molecular dynamics for liquid metals.Phys. Rev. B47, 558–561 (1993)..

Blöchl, P. E. Projector augmented-wave method.Phys. Rev. B50, 17953–17979 (1994)..

Perdew, J. P., Burke, K.&Ernzerhof, M. Generalized gradient approximation made simple.Phys. Rev. Lett.77, 3865–3868 (1996)..

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