1.Department of Mechanical Engineering, University of Hong Kong, Hong Kong, China
2.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
Wen-Di Li (liwd@hku.hk)
纸质出版日期:2022-05-31,
网络出版日期:2022-04-08,
收稿日期:2021-10-24,
修回日期:2022-03-16,
录用日期:2022-03-21
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Spatial modulation of nanopattern dimensions by combining interference lithography and grayscale-patterned secondary exposure[J]. LSA, 2022,11(5):832-841.
Gan, Z. F. et al. Spatial modulation of nanopattern dimensions by combining interference lithography and grayscale-patterned secondary exposure. Light: Science & Applications, 11, 832-841 (2022).
Spatial modulation of nanopattern dimensions by combining interference lithography and grayscale-patterned secondary exposure[J]. LSA, 2022,11(5):832-841. DOI: 10.1038/s41377-022-00774-z.
Gan, Z. F. et al. Spatial modulation of nanopattern dimensions by combining interference lithography and grayscale-patterned secondary exposure. Light: Science & Applications, 11, 832-841 (2022). DOI: 10.1038/s41377-022-00774-z.
Functional nanostructures are exploited for a variety of cutting-edge fields including plasmonics
metasurfaces
and biosensors
just to name a few. Some applications require nanostructures with uniform feature sizes while others rely on spatially varying morphologies. However
fine manipulation of the feature size over a large area remains a substantial challenge because mainstream approaches to precise nanopatterning are based on low-throughput pixel-by-pixel processing
such as those utilizing focused beams of photons
electrons
or ions. In this work
we provide a solution toward wafer-scale
arbitrary modulation of feature size distribution by introducing a lithographic portfolio combining interference lithography (IL) and grayscale-patterned secondary exposure (SE). Employed after the high-throughput IL
a SE with patterned intensity distribution spatially modulates the dimensions of photoresist nanostructures. Based on this approach
we successfully fabricated 4-inch wafer-scale nanogratings with uniform linewidths of < 5% variation
using grayscale-patterned SE to compensate for the linewidth difference caused by the Gaussian distribution of the laser beams in the IL. Besides
we also demonstrated a wafer-scale structural color painting by spatially modulating the filling ratio to achieve gradient grayscale color using SE.
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