A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared

Nan Ding; Yanjie Wu; Wen Xu; Jiekai Lyu; Yue Wang; Lu Zi; Long Shao; Rui Sun; Nan Wang; Sen Liu; Donglei Zhou; Xue Bai; Ji Zhou; Hongwei Song

doi:10.1038/s41377-022-00777-w

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A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared

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- A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared
- A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared
- LSA 2022年11卷第5期页码：842-854
- Affiliations：
  
  1.State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
  2.Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs Commission, Dalian Minzu University, Dalian, 116600, China
  3.State Kay Lab of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
- Author bio：
  
  Wen Xu (xuwen@dlnu.edu.cn)
  Hongwei Song (songhw@jlu.edu.cn)
- Funds：
- DOI：10.1038/s41377-022-00777-w
  中图分类号：
- 纸质出版日期：2022-05-31，
  
  网络出版日期：2022-04-11，
  
  收稿日期：2022-01-13，
  
  修回日期：2022-03-02，
  
  录用日期：2022-03-24
- Accepted：
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A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared[J]. LSA, 2022,11(5):842-854.

Ding, N. et al. A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared. Light: Science & Applications, 11, 842-854 (2022).
A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared[J]. LSA, 2022,11(5):842-854. DOI： 10.1038/s41377-022-00777-w.

Ding, N. et al. A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared. Light: Science & Applications, 11, 842-854 (2022). DOI： 10.1038/s41377-022-00777-w.

摘要

Abstract

Broadband photodetection (PD) covering the deep ultraviolet to near-infrared (200–1000 nm) range is significant and desirable for various optoelectronic designs. Herein

we employ ultraviolet (UV) luminescent concentrators (LC)

iodine-based perovskite quantum dots (PQDs)

and organic bulk heterojunction (BHJ) as the UV

visible

and near-infrared (NIR) photosensitive layers

respectively

to construct a broadband heterojunction PD. Firstly

experimental and theoretical results reveal that optoelectronic properties and stability of CsPbI

PQDs are significantly improved through Er

doping

owing to the reduced defect density

improved charge mobility

increased formation energy

tolerance factor

etc. The narrow bandgap of CsPbI

: Er

PQDs serves as a visible photosensitive layer of PD. Secondly

considering the matchable energy bandgap

the BHJ (BTP-4Cl: PBDB-TF) is selected as to NIR absorption layer to fabricate the hybrid structure with CsPbI

: Er

PQDs. Thirdly

UV LC converts the UV light (200–400 nm) to visible light (400–700 nm)

which is further absorbed by CsPbI

: Er

PQDs. In contrast with other perovskites PDs and commercial Si PDs

our PD presents a relatively wide response range and high detectivity especially in UV and NIR regions (two orders of magnitude increase that of commercial Si PDs). Furthermore

the PD also demonstrates significantly enhanced air- and UV- stability

and the photocurrent of the device maintains 81.5% of the original one after 5000 cycles. This work highlights a new attempt for designing broadband PDs

which has application potential in optoelectronic devices.

关键词

Keywords

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