Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

Johann Stachurski; Sebastian Tamariz; Gordon Callsen; Raphaël Butté; Nicolas Grandjean

doi:10.1038/s41377-022-00799-4

Go to Nature Website

Your Location：

Home >

Browse articles >

Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

Review

- Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots
- Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots
- LSA 2022年11卷第5期页码：751-765
- Affiliations：
  
  1.Institute of Physics, École Polytechnique Fédérale de Lausanne, EPFL, CH-1015, Lausanne, Switzerland
  2.Present address: Université Côte d'Azur, CNRS, CRHEA, F-06560, Valbonne, France
  3.Present address: Institut für Festkörperphysik, Universität Bremen, 28359 Bremen, Germany
- Author bio：
  
  Johann Stachurski (johann.stachurski@epfl.ch)
- Funds：
- DOI：10.1038/s41377-022-00799-4
  中图分类号：
- 纸质出版日期：2022-05-31，
  
  网络出版日期：2022-04-28，
  
  收稿日期：2021-11-17，
  
  修回日期：2022-04-04，
  
  录用日期：2022-04-13
- Accepted：
Scan QR Code
Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots[J]. LSA, 2022,11(5):751-765.

Stachurski, J. et al. Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots. Light: Science & Applications, 11, 751-765 (2022).
Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots[J]. LSA, 2022,11(5):751-765. DOI： 10.1038/s41377-022-00799-4.

Stachurski, J. et al. Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots. Light: Science & Applications, 11, 751-765 (2022). DOI： 10.1038/s41377-022-00799-4.

摘要

Abstract

Ⅲ-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here

we report on the evolution of the emission properties of self-assembled GaN/AlN QDs for temperatures ranging from 5 to 300 K. We carefully track the photoluminescence of a single QD and measure an optimum single photon purity of

(2)

(0) = 0.05 ± 0.02 at 5 K and 0.17 ± 0.08 at 300 K. We complement this study with temperature dependent time-resolved photoluminescence measurements (TRPL) performed on a QD ensemble to further investigate the exciton recombination dynamics of such polar zero-dimensional nanostructures. By comparing our results to past reports

we emphasize the complexity of recombination processes in this system. Instead of the more conventional mono-exponential decay typical of exciton recombination

TRPL transients display a bi-exponential feature with short- and long-lived components that persist in the low excitation regime. From the temperature insensitivity of the long-lived excitonic component

we first discard the interplay of dark-to-bright state refilling in the exciton

recombination process. Besides

this temperature-invariance also highlights the absence of nonradiative exciton recombinations

a likely direct consequence of the strong carrier confinement observed in GaN/AlN QDs up to 300 K. Overall

our results support the viability of these dots as a potential single-photon source for quantum applications at room temperature.

关键词

Keywords

references

Dowling, J. P.&Milburn, G. J. Quantum technology: the second quantum revolution.Philos. Trans. R. Soc. A: Math. Phys. Eng. Sci.361, 1655–1674 (2003)..

Aharonovich, I., Englund, D.&Toth, M. Solid-state single-photon emitters.Nat. Photonics10, 631–641 (2016)..

Kurtsiefer, C. et al. Stable solid-state source of single photons.Phys. Rev. Lett.85, 290–293 (2000)..

Aharonovich, I.&Neu, E. Diamond nanophotonics.Adv. Opt. Mater.2, 911–928 (2014)..

Bogdanov, S. I. et al. Ultrabright room-temperature sub-nanosecond emission from single nitrogen-vacancy centers coupled to nanopatch antennas.Nano Lett.18, 4837–4844 (2018)..

He, Y. M. et al. Single quantum emitters in monolayer semiconductors.Nat. Nanotechnol.10, 497–502 (2015)..

Tran, T. T. et al. Quantum emission from hexagonal boron nitride monolayers.Nat. Nanotechnol.11, 37–41 (2016)..

Berhane, A. M. et al. Bright room-temperature single-photon emission from defects in gallium nitride.Adv. Mater.29, 1605092 (2017)..

Zhou, Y. et al. Room temperature solid-state quantum emitters in the telecom range.Sci. Adv.4, eaar3580 (2018)..

Senellart, P., Solomon, G.&White, A. High-performance semiconductor quantum-dot single-photon sources.Nat. Nanotechnol.12, 1026–1039 (2017)..

Holmes, M. J., Arita, M.&Arakawa, Y. Ⅲ-nitride quantum dots as single photon emitters.Semicond. Sci. Technol.34, 033001 (2019)..

Arakawa, Y.&Holmes, M. J. Progress in quantum-dot single photon sources for quantum information technologies: a broad spectrum overview.Appl. Phys. Rev.7, 021309 (2020)..

Ostapenko, I. A. et al. Exciton acoustic-phonon coupling in single GaN/AlN quantum dots.Phys. Rev. B85, 081303 (2012)..

Bardoux, R. et al. Photoluminescence of single GaN/AlN hexagonal quantum dots on Si (111): spectral diffusion effects.Phys. Rev. B74, 195319 (2006)..

Gao, K. et al. Nanosecond-scale spectral diffusion in the single photon emission of a GaN quantum dot.AIP Adv.7, 125216 (2017)..

Arita, M. et al. Ultraclean single photon emission from a GaN quantum dot.Nano Lett.17, 2902–2907 (2017)..

Hönig, G. et al. Identification of electric dipole moments of excitonic complexes in nitride-based quantum dots.Phys. Rev. B88, 045309 (2013)..

Kindel, C. et al. Spectral diffusion in nitride quantum dots: emission energy-dependent linewidths broadening via giant built-in dipole moments.Phys. Status Solidi RRL8, 408–413 (2014)..

Fonoberov, V. A.&Balandin, A. A. Excitonic properties of strained wurtzite and zinc-blende GaN/AlxGa1-xN quantum dots.J. Appl. Phys.94, 7178–7186 (2003)..

Sergent, S. et al. Narrow spectral linewidth of single zinc-blende GaN/AlN self-assembled quantum dots.Appl. Phys. Lett.103, 151109 (2013)..

Wang, X. et al. Ⅲ-Ⅴ compounds as single photon emitters.J. Semicond.40, 071906 (2019)..

Castelletto, S. et al. Hexagonal boron nitride:a review of the emerging material platform for single-photon sources and the spin-photon interface.Beilstein J. Nanotechnol.11, 740–769 (2020)..

Scarani, V. et al. The security of practical quantum key distribution.Rev. Mod. Phys.81, 1301–1350 (2009)..

Lo, H. K., Curty, M.&Tamaki, K. Secure quantum key distribution.Nat. Photon.8, 595–604 (2014)..

White, A. G. et al. "Interaction-free" imaging.Phys. Rev. A58, 605–613 (1998)..

Cheung, J. Y. et al. The quantum candela: a re-definition of the standard units for optical radiation.J. Mod. Opt.54, 373–396 (2007)..

Deshpande, S. et al. Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire.Nat. Commun.4, 1675 (2013)..

Damilano, B. et al. From visible to white light emission by GaN quantum dots on Si(111) substrate.Appl. Phys. Lett.75, 962–964 (1999)..

Frost, T. et al. InGaN/GaN quantum dot red (λ= 630 nm) Laser.IEEE J. Quantum Electron.49, 923 (2013)..

Verma, J. et al. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in Ⅲ-nitride heterostructures.Appl. Phys. Lett.104, 021105 (2014)..

Reilly, C. E. et al. Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition.Appl. Phys. Lett.114, 241103 (2019)..

Holmes, M. J. et al. Room-temperature triggered single photon emission from a Ⅲ-nitride site-controlled nanowire quantum dot.Nano Lett.14, 982–986 (2014)..

Holmes, M. et al. Single photons from a hot solid-state emitter at 350 K.ACS Photonics3, 543–546 (2016)..

Tamariz, S. et al. Toward bright and pure single photon emitters at 300 K based on GaN quantum dots on silicon.ACS Photonics7, 1515–1522 (2020)..

Hönig, G. et al. Manifestation of unconventional biexciton states in quantum dots.Nat. Commun.5, 5721 (2014)..

Arlery, M. et al. Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy.Appl. Phys. Lett.74, 3287–3289 (1999)..

Andreev, A. D.&O'Reilly, E. P. Theory of the electronic structure of GaN/AlN hexagonal quantum dots.Phys. Rev. B62, 15851–15870 (2000)..

Butté, R.&Grandjean, N. Effects of polarization in optoelectronic quantum structures. in Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications (eds Wood, C.&Jena, D. ), 467–511 (Boston, MA: Springer, 2008).

Ranjan, V. et al. Self-consistent calculations of the optical properties of GaN quantum dots.Phys. Rev. B68, 115305 (2003)..

Andreev, A. D.&O'Reilly, E. P. Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots.Appl. Phys. Lett.79, 521–523 (2001)..

Schliwa, A., Hönig, G.&Bimberg, D. Electronic properties of Ⅲ-Ⅴ quantum dots. in Multi-Band Effective Mass Approximations: Advanced Mathematical Models and Numerical Techniques (eds Ehrhardt, M.&Koprucki, T. ), 57–85 (Cham: Springer, 2014).

Widmann, F. et al. Blue-light emission from GaN self-assembled quantum dots due togiant piezoelectric effect.Phys. Rev. B58, R15989–R15992 (1998)..

Hoshino, K., Kako, S.&Arakawa, Y. Formation and optical properties of stacked GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition.Appl. Phys. Lett.85, 1262–1264 (2004)..

Rodina, A. V. et al. Free excitons in wurtzite GaN.Phys. Rev. B64, 115204 (2001)..

Ivchenko, E. L. Fine structure of excitonic levels in semiconductor nanostructures.Phys. Status Solidi A164, 487–492 (1997)..

Kindel, C. et al. Exciton fine-structure splitting in GaN/AlN quantum dots.Phys. Rev. B81, 241309(R) (2010)..

Seguin, R. et al. Quantum-dot size dependence of exciton fine-structure splitting.Phys. E: Low. -Dimens. Syst. Nanostruct.32, 101–103 (2006)..

Liu, F. et al. Spin dynamics of negatively charged excitons in CdSe/CdS colloidal nanocrystals.Phys. Rev. B88, 035302 (2013)..

Regelman, D. V. et al. Semiconductor quantum dot: a quantum light source of multicolor photons with tunable statistics.Phys. Rev. Lett.87, 257401 (2001)..

Mizrahi, U. et al. Non-classical light generated by a quantum dot: multi-color photons with tunable statistics.Synth. Met.139, 711–714 (2003)..

Dekel, E. et al. Carrier-carrier correlations in an optically excited singlesemiconductor quantum dot.Phys. Rev. B61, 11009–11020 (2000)..

Kindel, C. Study on optical polarization in hexagonal gallium nitride quantum dots. PhD Thesis, University of Tokyo (2010).

Sun, X. et al. Excitation and emission dynamics of a single photon emitting InGaN quantum dot in a photonic horn structure.Superlattices Microstruct.145, 106575 (2020)..

Ohnesorge, B. et al. Rapid carrier relaxation in self-assembled InxGa1-xAs/GaAs quantumdots.Phys. Rev. B54, 11532–11538 (1996)..

Ferreira, R.&Bastard, G. Phonon-assisted capture and intradot Auger relaxation in quantum dots.Appl. Phys. Lett.74, 2818–2820 (1999)..

Gao, K. et al. Spectral diffusion time scales in InGaN/GaN quantum dots.Appl. Phys. Lett.114, 112109 (2019)..

Holmes, M. J. et al. Pure single-photon emission from an InGaN/GaN quantum dot.APL Mater.9, 061106 (2021)..

Sallen, G. et al. Subnanosecond spectral diffusion measurement using photon correlation.Nat. Photonics4, 696–699 (2010)..

Fischer, A. J. et al. Femtosecond four-wave-mixing studies of nearly homogeneously broadened excitons in GaN.Phys. Rev. B56, 1077–1080 (1997)..

Carmele, A.&Knorr, A. Analytical solution of the quantum-state tomography of the biexciton cascade in semiconductor quantum dots: pure dephasing does not affect entanglement.Phys. Rev. B84, 075328 (2011)..

Callsen, G. et al. Steering photon statistics in single quantum dots: from one-to two-photon emission.Phys. Rev. B87, 245314 (2013)..

Daudin, B. et al. Piezoelectric properties of GaN self-organized quantum dots.MRS Internet J. Nitride Semicond. Res.4, 846–851 (1999)..

Kako, S. et al. Size-dependent radiative decay time of excitons in GaN/AlN self-assembled quantum dots.Appl. Phys. Lett.83, 984–986 (2003)..

Bretagnon, T. et al. Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots.Phys. Rev. B73, 113304 (2006)..

Hrytsaienko, M. et al. Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics inc-plane GaN/AlN quantum dots emitting in the UV range.J. Appl. Phys.129, 054301 (2021)..

Labeau, O., Tamarat, P.&Lounis, B. Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots.Phys. Rev. Lett.90, 257404 (2003)..

Sallen, G. et al. Exciton dynamics of a single quantum dot embedded in a nanowire.Phys. Rev. B80, 085310 (2009)..

Le Roux, F. et al. Temperature dependence of the single photon emission from interface-fluctuation GaN quantum dots.Sci. Rep.7, 16107 (2017)..

Brouri, R. et al. Photon antibunching in the fluorescence of individual color centers in diamond.Opt. Lett.25, 1294–1296 (2000)..

Tomić, S.&Vukmirović, N. Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-band k·p theory and configuration-interaction method.Phys. Rev. B79, 245330 (2009)..

Melnychuk, C.&Guyot-Sionnest, P. Multicarrier dynamics in quantum dots.Chem. Rev.121, 2325–2372 (2021)..

Kurzmann, A. et al. Auger recombination in self-assembled quantum dots: quenching and broadening of the charged exciton transition.Nano Lett.16, 3367–3372 (2016)..

Santori, C. et al. Time-resolved spectroscopy of multiexcitonic decay in an InAs quantum dot.Phys. Rev. B65, 073310 (2002)..

Lasher, G.&Stern, F. Spontaneous and stimulated recombination radiation in semiconductors.Phys. Rev.133, A553–A563 (1964)..

Renard, J. et al. Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots.Appl. Phys. Lett.95, 131903 (2009)..

Winkelnkemper, M. et al. GaN/AlN quantum dots for single qubit emitters.J. Phys. : Condens. Matter20, 454211 (2008)..

Nguyen, H. S. et al. Ultra-coherent single photon source.Appl. Phys. Lett.99, 261904 (2011)..

Borri, P. et al. Ultralong dephasing time in InGaAs quantum dots.Phys. Rev. Lett.87, 157401 (2001)..

Renard, J. et al. Evidence for quantum-confined Stark effect in GaN/AlN quantum dotsin nanowires.Phys. Rev. B80, 121305(R) (2009)..

Sarusi, G. et al. Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111).Phys. Rev. B75, 075306 (2007)..

Ponce, F. A. et al. Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers.Appl. Phys. Lett.65, 2302–2304 (1994)..

Ponce, F. A.&Krusor, B. S. Microstructure of GaN epitaxy on SiC using AlN buffer layers.Appl. Phys. Lett.67, 410–412 (1995)..

Sanguinetti, S. et al. Modified droplet epitaxy GaAs/AlGaAs quantum dots grown on a variable thickness wetting layer.J. Cryst. Growth253, 71–76 (2003)..

Sun, C. et al. Wetting layers effect on InAs/GaAs quantum dots.Phys. B: Condens. Matter407, 4440–4445 (2012)..

Patton, B., Langbein, W.&Woggon, U. Trion, biexciton, and exciton dynamics in single self-assembled CdSe quantum dots.Phys. Rev. B68, 125316 (2003)..

Yu, P. et al. Nanowire quantum dot surface engineering for high temperature single photon emission.ACS Nano13, 13492–13500 (2019)..

Liu, C. et al. 234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes.Appl. Phys. Lett.112, 011101 (2018)..

Tamariz, S., Callsen, G.&Grandjean, N. Density control of GaN quantum dots on AlN single crystal.Appl. Phys. Lett.114, 082101 (2019)..

Jagsch, S. T. et al. Ground-state resonant two-photon transitions in wurtzite GaN/AlN quantum dots.Phys. Rev. B99, 245303 (2019)..

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

暂无数据