An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures

Fan Zhang; Jose F. Castaneda; Timothy H. Gfroerer; Daniel Friedman; Yong-Hang Zhang; Mark W. Wanlass; Yong Zhang

doi:10.1038/s41377-022-00833-5

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An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures

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- An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures
- An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures
- LSA 2022年11卷第6期页码：1206-1217
- Affiliations：
  
  1.Department of Electrical and Computer Engineering, The University of North Carolina at Charlotte, Charlotte, NC 28223, USA
  2.Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
  3.Department of Physics, Davidson College, Davidson, NC 28035, USA
  4.National Renewable Energy Laboratory, Golden, CO 80401, USA
  5.School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA
  6.Wanlass Consulting, Norwood, CO 81423, USA
- Author bio：
  
  Yong Zhang (yong.zhang@uncc.edu)
- Funds：
- DOI：10.1038/s41377-022-00833-5
  中图分类号：
- 纸质出版日期：2022-06-30，
  
  网络出版日期：2022-05-13，
  
  收稿日期：2021-11-12，
  
  修回日期：2022-04-21，
  
  录用日期：2022-04-29
- Accepted：
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An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures[J]. LSA, 2022,11(6):1206-1217.

Zhang, F. et al. An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures. Light: Science & Applications, 11, 1206-1217 (2022).
An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures[J]. LSA, 2022,11(6):1206-1217. DOI： 10.1038/s41377-022-00833-5.

Zhang, F. et al. An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures. Light: Science & Applications, 11, 1206-1217 (2022). DOI： 10.1038/s41377-022-00833-5.

摘要

Abstract

We demonstrate an

all optical

approach that can surprisingly offer the possibility of yielding much more information than one would expect

pertinent to the carrier recombination dynamics via both radiative and nonradiative processes when only one dominant deep defect level is present in a semiconductor material. By applying a band-defect state coupling model that explicitly treats the inter-band radiative recombination and Shockley–Read–Hall (SRH) recombination via the deep defect states on an equal footing for any defect center occupation fraction

and analyzing photoluminescence (PL) as a function of excitation density over a wide range of the excitation density (e.g.

5–6 orders in magnitude)

in conjunction with Raman measurements of the LO-phonon plasmon (LOPP) coupled mode

nearly all of the key parameters relevant to the recombination processes can be obtained. They include internal quantum efficiency (I

QE)

minority and majority carrier density

inter-band radiative recombination rate (

)

minority carrier nonradiative recombination rate (

)

defect center occupation fraction (

)

defect center density (

)

and minority and majority carrier capture cross-sections (

and

). While some of this information is thought to be obtainable optically

such as IQE and the

ratio

most of the other parameters are generally considered to be attainable only through electrical techniques

such as current-voltage (I-V) characteristics and deep level transient spectroscopy (DLTS). Following a procedure developed herein

this approach has been successfully applied to three GaAs double-heterostructures that exhibit two distinctly different nonradiative recombination characteristics. The method greatly enhances the usefulness of the simple PL technique to an unprecedented level

facilitating comprehensive material and device characterization without the need for any device processing.

关键词

Keywords

references

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