Mid-infrared Ⅲ–Ⅴ semiconductor lasers epitaxially grown on Si substrates

Eric Tournié; Laura Monge Bartolome; Marta Rio Calvo; Zeineb Loghmari; Daniel A. Díaz-Thomas; Roland Teissier; Alexei N. Baranov; Laurent Cerutti; Jean-Baptiste Rodriguez

doi:10.1038/s41377-022-00850-4

Go to Nature Website

Your Location：

Home >

Browse articles >

Mid-infrared Ⅲ–Ⅴ semiconductor lasers epitaxially grown on Si substrates

Reviews

- Mid-infrared Ⅲ–Ⅴ semiconductor lasers epitaxially grown on Si substrates
- Mid-infrared Ⅲ–Ⅴ semiconductor lasers epitaxially grown on Si substrates
- Light: Science & Applications 2022年11卷第7期页码：1366-1378
- Affiliations：
  
  1.IES, University of Montpellier, CNRS, 34000, Montpellier, France
- Author bio：
  
  Eric Tournié (eric.tournie@umontpellier.fr)
- Funds：
- DOI：10.1038/s41377-022-00850-4
  中图分类号：
Scan for full text
Eric Tournié, Laura Monge Bartolome, Marta Rio Calvo, 等. Mid-infrared Ⅲ–Ⅴ semiconductor lasers epitaxially grown on Si substrates[J]. Light: Science & Applications, 2022,11(7):1366-1378.

Tournié, E. et al. Mid-infrared Ⅲ–Ⅴ semiconductor lasers epitaxially grown on Si substrates. Light: Science & Applications, 11, 1366-1378 (2022).
Eric Tournié, Laura Monge Bartolome, Marta Rio Calvo, 等. Mid-infrared Ⅲ–Ⅴ semiconductor lasers epitaxially grown on Si substrates[J]. Light: Science & Applications, 2022,11(7):1366-1378. DOI： 10.1038/s41377-022-00850-4.

Tournié, E. et al. Mid-infrared Ⅲ–Ⅴ semiconductor lasers epitaxially grown on Si substrates. Light: Science & Applications, 11, 1366-1378 (2022). DOI： 10.1038/s41377-022-00850-4.

摘要

Abstract

There is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics integrated circuits. We review this rapidly-evolving research field, focusing on the epitaxial integration of antimonide lasers, the only technology covering the whole mid-to-far-infrared spectral range. We explain how a dedicated molecular-beam epitaxy strategy allows for achieving high-performance GaSb-based diode lasers, InAs/AlSb quantum cascade lasers, and InAs/GaInSb interband cascade lasers by direct growth on on-axis (001)Si substrates, whereas GaAs-on-Si or GaSb-on-Si layers grown by metal-organic vapor phase epitaxy in large capability epitaxy tools are suitable templates for antimonide laser overgrowth. We also show that etching the facets of antimonide lasers grown on Si is a viable approach in view of photonic integrated circuits. Remarkably, this review shows that while diode lasers are sensitive to residual crystal defects, the quantum cascade and interband cascade lasers grown on Si exhibit performances comparable to those of similar devices grown on their native substrates, due to their particular band structures and radiative recombination channels. Long device lifetimes have been extrapolated for interband cascade lasers. Finally, routes to be further explored are also presented.

关键词

Keywords

references

I. E. Gordon , 等 . The HITRAN2016 molecular spectroscopic database . J. Quant. Spectrosc. Radiat. Transf. , 2017 . 203 3 -69 . DOI:10.1016/j.jqsrt.2017.06.038http://doi.org/10.1016/j.jqsrt.2017.06.038 .

Tournié, E. & Cerutti, L. Mid-Infrared Optoelectronics: Materials, Devices, and Applications (Woodhead Publishing, 2020).

R. Helkey , 等 . High-performance photonic integrated circuits on silicon . IEEE J. Sel. Top. Quantum Electron. , 2019 . 25 8300215 DOI:10.1109/JSTQE.2019.2903775http://doi.org/10.1109/JSTQE.2019.2903775 .

Y. T. Hu , 等 . Ⅲ/Ⅴ-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template . Light. Sci. Appl. , 2019 . 8 93 DOI:10.1038/s41377-019-0202-6http://doi.org/10.1038/s41377-019-0202-6 .

J. M. Ramirez , 等 . Ⅲ-Ⅴ-on-silicon integration: from hybrid devices to heterogeneous photonic integrated circuits . IEEE J. Sel. Top. Quantum Electron. , 2020 . 26 6100213 DOI:10.1109/JSTQE.2019.2939503http://doi.org/10.1109/JSTQE.2019.2939503 .

D. Liang , J. E. Bowers . Recent progress in heterogeneous Ⅲ-Ⅴ-on-silicon photonic integration . Light. Adv. Manuf. , 2021 . 2 5 .

R. Soref . Mid-infrared photonics in silicon and germanium . Nat. Photonics , 2010 . 4 495 -497 . DOI:10.1038/nphoton.2010.171http://doi.org/10.1038/nphoton.2010.171 .

G. Z. Mashanovich , 等 . Germanium mid-infrared photonic devices . J. Lightwave Technol. , 2017 . 35 624 -630 . DOI:10.1109/JLT.2016.2632301http://doi.org/10.1109/JLT.2016.2632301 .

T. Hu , 等 . Silicon photonic platforms for mid-infrared applications [Invited] . Photonics Res. , 2017 . 5 417 -430 . DOI:10.1364/PRJ.5.000417http://doi.org/10.1364/PRJ.5.000417 .

D. Marris-Morini , 等 . Germanium-based integrated photonics from near- to mid-infrared applications . Nanophotonics , 2018 . 7 1781 -1793 . DOI:10.1515/nanoph-2018-0113http://doi.org/10.1515/nanoph-2018-0113 .

J. M. Fedeli , S. Nicoletti . Mid-infrared (Mid-IR) silicon-based photonics . Proc. IEEE , 2018 . 106 2302 -2312 . DOI:10.1109/JPROC.2018.2844565http://doi.org/10.1109/JPROC.2018.2844565 .

Hattasan, N. et al. Integrated thin-film GaSb-based Fabry-Perot lasers: towards a fully integrated spectrometer on a SOI waveguide circuit. In Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 863114 (SPIE, 2013).

A. Spott , 等 . Heterogeneously integrated 2.0 μm CW hybrid silicon lasers at room temperature . Opt. Lett. , 2015 . 40 1480 -1483 . DOI:10.1364/OL.40.001480http://doi.org/10.1364/OL.40.001480 .

R. J. Wang , 等 . 2.3 µm range InP-based type-Ⅱ quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit . Opt. Express , 2016 . 24 21081 -21089 . DOI:10.1364/OE.24.021081http://doi.org/10.1364/OE.24.021081 .

R. J. Wang , 等 . Broad wavelength coverage 2.3 µm Ⅲ-Ⅴ-on-silicon DFB laser array . Optica , 2017 . 4 972 -975 . DOI:10.1364/OPTICA.4.000972http://doi.org/10.1364/OPTICA.4.000972 .

A. Spott , 等 . Interband cascade laser on silicon . Optica , 2018 . 5 996 -1005 . DOI:10.1364/OPTICA.5.000996http://doi.org/10.1364/OPTICA.5.000996 .

A. Spott , 等 . Quantum cascade laser on silicon . Optica , 2016 . 3 545 -551 . DOI:10.1364/OPTICA.3.000545http://doi.org/10.1364/OPTICA.3.000545 .

S. Jung , 等 . Quantum cascade lasers transfer-printed on silicon-on-sapphire . Appl. Phys. Lett. , 2017 . 111 211102 DOI:10.1063/1.5002157http://doi.org/10.1063/1.5002157 .

J. G. Coutard , 等 . Volume fabrication of quantum cascade lasers on 200 mm-CMOS pilot line . Sci. Rep. , 2020 . 10 6185 DOI:10.1038/s41598-020-63106-4http://doi.org/10.1038/s41598-020-63106-4 .

A. Y. Liu , J. Bowers . Photonic integration with epitaxial Ⅲ–Ⅴ on silicon . IEEE J. Sel. Top. Quantum Electron. , 2018 . 24 6000412 .

A. Y. Liu , 等 . Quantum dot lasers for silicon photonics [Invited] . Photonics Res. , 2015 . 3 B1 -B9 . DOI:10.1364/PRJ.3.0000B1http://doi.org/10.1364/PRJ.3.0000B1 .

J. C. Norman , 等 . Perspective: the future of quantum dot photonic integrated circuits . APL Photonics , 2018 . 3 030901 DOI:10.1063/1.5021345http://doi.org/10.1063/1.5021345 .

Y. Arakawa , T. Nakamura , J. Kwoen . Quantum dot lasers for silicon photonics . Semiconductors Semimet. , 2019 . 101 91 -138 . DOI:10.1016/bs.semsem.2019.07.007http://doi.org/10.1016/bs.semsem.2019.07.007 .

S. J. Pan , 等 . Recent progress in epitaxial growth of Ⅲ–Ⅴ quantum-dot lasers on silicon substrate . J. Semiconductors , 2019 . 40 101302 DOI:10.1088/1674-4926/40/10/101302http://doi.org/10.1088/1674-4926/40/10/101302 .

B. Shi , K. M. Lau . Growth of Ⅲ–Ⅴ semiconductors and lasers on silicon substrates by MOCVD . Semiconductors Semimet. , 2019 . 101 229 -282 . DOI:10.1016/bs.semsem.2019.07.005http://doi.org/10.1016/bs.semsem.2019.07.005 .

M. Razeghi , 等 . Quantum cascade lasers: from tool to product . Opt. Express , 2015 . 23 8462 -8475 . DOI:10.1364/OE.23.008462http://doi.org/10.1364/OE.23.008462 .

A. N. Baranov , R. Teissier . Quantum cascade lasers in the InAs/AlSb material system . IEEE J. Sel. Top. Quantum Electron. , 2015 . 21 1200612 DOI:10.1109/JSTQE.2015.2426412http://doi.org/10.1109/JSTQE.2015.2426412 .

Cerutti, L., Vicet, A. & Tournié, E. In Mid-Infrared Optoelectronics (eds Tournié, E. & Cerutti, L.) 91–130 (Elsevier, 2020).

R. Q. Yang . Infrared laser based on intersubband transitions in quantum wells . Superlattices Microstructures , 1995 . 17 77 -83 . DOI:10.1006/spmi.1995.1017http://doi.org/10.1006/spmi.1995.1017 .

J. R. Meyer , 等 . The interband cascade laser . Photonics , 2020 . 7 75 DOI:10.3390/photonics7030075http://doi.org/10.3390/photonics7030075 .

R. Go , 等 . InP-based quantum cascade lasers monolithically integrated onto silicon . Opt. Express , 2018 . 26 22389 -22393 . DOI:10.1364/OE.26.022389http://doi.org/10.1364/OE.26.022389 .

A. Rajeev , 等 . Ⅲ–Ⅴ superlattices on InP/Si metamorphic buffer layers for λ≈4.8 μm quantum cascade lasers . Phys. Status Solidi (A) , 2019 . 216 1800493 .

H. Nguyen-Van , 等 . Quantum cascade lasers grown on silicon . Sci. Rep. , 2018 . 8 7206 DOI:10.1038/s41598-018-24723-2http://doi.org/10.1038/s41598-018-24723-2 .

Z. Loghmari , 等 . InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate . APL Photonics , 2020 . 5 041302 DOI:10.1063/5.0002376http://doi.org/10.1063/5.0002376 .

J. R. Reboul , 等 . Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si . Appl. Phys. Lett. , 2011 . 99 121113 DOI:10.1063/1.3644983http://doi.org/10.1063/1.3644983 .

A. Castellano , 等 . Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si . APL Photonics , 2017 . 2 061301 DOI:10.1063/1.4983389http://doi.org/10.1063/1.4983389 .

M. R. Calvo , 等 . Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon . Optica , 2020 . 7 263 -266 . DOI:10.1364/OPTICA.388383http://doi.org/10.1364/OPTICA.388383 .

L. Cerutti , 等 . Quantum well interband semiconductor lasers highly tolerant to dislocations . Optica , 2021 . 8 1397 -1402 . DOI:10.1364/OPTICA.438272http://doi.org/10.1364/OPTICA.438272 .

I. Vurgaftman , J. R. Meyer , L. R. Ram-Mohan . Band parameters for Ⅲ–Ⅴ compound semiconductors and their alloys . J. Appl. Phys. , 2001 . 89 5815 -5875 . DOI:10.1063/1.1368156http://doi.org/10.1063/1.1368156 .

H. Ko , 等 . Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors . Nature , 2010 . 468 286 -289 . DOI:10.1038/nature09541http://doi.org/10.1038/nature09541 .

P. S. Dutta , H. L. Bhat , V. Kumar . The physics and technology of gallium antimonide: an emerging optoelectronic material . J. Appl. Phys. , 1997 . 81 5821 -5870 . DOI:10.1063/1.365356http://doi.org/10.1063/1.365356 .

E. Selvig , 等 . Calibration of the arsenic mole fraction in MBE grown GaAsySb1-y and AlxGa1−xAsySb1−y (y < 0.2) . J. Cryst. Growth , 2001 . 227-228 562 -565 . DOI:10.1016/S0022-0248(01)00772-2http://doi.org/10.1016/S0022-0248(01)00772-2.

F. Szmulowicz , 等 . Interfaces as design tools for short-period InAs/GaSb type-Ⅱ superlattices for mid-infrared detectors . Opto-electron. Rev. , 2006 . 14 69 -75 . DOI:10.2478/s11772-006-0010-4http://doi.org/10.2478/s11772-006-0010-4 .

Tournié, E. In Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics (eds Asahi, H. & Horikoshi, Y.) 233–246 (Wiley, 2019).

H. Zhu , 等 . Long-wavelength InAs/GaSb superlattice detectors with low dark current density grown by MOCVD . IEEE Photonics Technol. Lett. , 2021 . 33 429 -432 . DOI:10.1109/LPT.2021.3064551http://doi.org/10.1109/LPT.2021.3064551 .

H. Kroemer . MBE growth of GaAs on Si: problems and progress . MRS Online Proc. Libr. , 1986 . 67 3 -14 . DOI:10.1557/PROC-67-3http://doi.org/10.1557/PROC-67-3 .

S. F. Fang , 等 . Gallium arsenide and other compound semiconductors on silicon . J. Appl. Phys. , 1990 . 68 R31 -R58 . DOI:10.1063/1.346284http://doi.org/10.1063/1.346284 .

S. Lourdudoss . Heteroepitaxy and selective area heteroepitaxy for silicon photonics . Curr. Opin. Solid State Mater. Sci. , 2012 . 16 91 -99 . DOI:10.1016/j.cossms.2012.01.003http://doi.org/10.1016/j.cossms.2012.01.003 .

Q. Li , K. M. Lau . Epitaxial growth of highly mismatched Ⅲ-Ⅴ materials on (001) silicon for electronics and optoelectronics . Prog. Cryst. Growth Charact. Mater. , 2017 . 63 105 -120 . DOI:10.1016/j.pcrysgrow.2017.10.001http://doi.org/10.1016/j.pcrysgrow.2017.10.001 .

B. Kunert , 等 . How to control defect formation in monolithic Ⅲ/Ⅴ hetero-epitaxy on (100) Si? A critical review on current approaches . Semiconductor Sci. Technol. , 2018 . 33 093002 DOI:10.1088/1361-6641/aad655http://doi.org/10.1088/1361-6641/aad655 .

D. Jung , 等 . Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si . Appl. Phys. Lett. , 2018 . 112 153507 DOI:10.1063/1.5026147http://doi.org/10.1063/1.5026147 .

C. Hantschmann , 等 . Theoretical study on the effects of dislocations in monolithic Ⅲ-Ⅴ lasers on silicon . J. Lightwave Technol. , 2020 . 38 4801 -4807 . DOI:10.1109/JLT.2020.2994300http://doi.org/10.1109/JLT.2020.2994300 .

A. Rocher , E. Snoeck . Misfit dislocations in (001) semiconductor heterostructures grown by epitaxy . Mater. Sci. Eng.: B , 1999 . 67 62 -69 . DOI:10.1016/S0921-5107(99)00210-Xhttp://doi.org/10.1016/S0921-5107(99)00210-X .

K. Akahane , 等 . Heteroepitaxial growth of GaSb on Si(0 0 1) substrates . J. Cryst. Growth , 2004 . 264 21 -25 . DOI:10.1016/j.jcrysgro.2003.12.041http://doi.org/10.1016/j.jcrysgro.2003.12.041 .

S. H. Huang , 等 . Strain relief by periodic misfit arrays for low defect density GaSb on GaAs . Appl. Phys. Lett. , 2006 . 88 131911 DOI:10.1063/1.2172742http://doi.org/10.1063/1.2172742 .

Y. H. Kim , 等 . Growth mode and structural characterization of GaSb on Si (001) substrate: a transmission electron microscopy study . Appl. Phys. Lett. , 2006 . 88 241907 DOI:10.1063/1.2209714http://doi.org/10.1063/1.2209714 .

S. H. Huang , 等 . Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate . Appl. Phys. Lett. , 2008 . 93 071102 DOI:10.1063/1.2970997http://doi.org/10.1063/1.2970997 .

A. Trampert , E. Tournié , K. H. Ploog . Novel plastic strain-relaxation mode in highly mismatched Ⅲ-Ⅴ layers induced by two-dimensional epitaxial growth . Appl. Phys. Lett. , 1995 . 66 2265 -2267 . DOI:10.1063/1.113187http://doi.org/10.1063/1.113187 .

M. C. Tang , 等 . Optimisation of the dislocation filter layers in 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates . IET Optoelectron. , 2015 . 9 61 -64 . DOI:10.1049/iet-opt.2014.0078http://doi.org/10.1049/iet-opt.2014.0078 .

D. Jung , 等 . Low threading dislocation density GaAs growth on on-axis GaP/Si (001) . J. Appl. Phys. , 2017 . 122 225703 DOI:10.1063/1.5001360http://doi.org/10.1063/1.5001360 .

J. Selvidge , 等 . Defect filtering for thermal expansion induced dislocations in Ⅲ–Ⅴ lasers on silicon . Appl. Phys. Lett. , 2020 . 117 122101 DOI:10.1063/5.0023378http://doi.org/10.1063/5.0023378 .

C. Shang , 等 . A pathway to thin GaAs virtual substrate on on-axis Si (001) with ultralow threading dislocation density . Phys. Status Solidi (A) , 2021 . 218 2000402 DOI:10.1002/pssa.202000402http://doi.org/10.1002/pssa.202000402 .

C. Shang , 等 . High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters . Optica , 2021 . 8 749 -754 . DOI:10.1364/OPTICA.423360http://doi.org/10.1364/OPTICA.423360 .

H. Kroemer . Polar-on-nonpolar epitaxy . J. Cryst. Growth , 1987 . 81 193 -204 . DOI:10.1016/0022-0248(87)90391-5http://doi.org/10.1016/0022-0248(87)90391-5 .

I. Lucci , 等 . Universal description of Ⅲ-Ⅴ/Si epitaxial growth processes . Phys. Rev. Mater. , 2018 . 2 060401 DOI:10.1103/PhysRevMaterials.2.060401http://doi.org/10.1103/PhysRevMaterials.2.060401 .

B. Galiana , 等 . Characterization of antiphase domains on GaAs grown on Ge substrates by conductive atomic force microscopy for photovoltaic applications . Sol. Energy Mater. Sol. Cells , 2011 . 95 1949 -1954 . DOI:10.1016/j.solmat.2010.12.021http://doi.org/10.1016/j.solmat.2010.12.021 .

H. Z. Chen , 等 . Low-threshold (~600 A/cm2 at room temperature) GaAs/AlGaAs lasers on Si (100) . Appl. Phys. Lett. , 1987 . 51 1320 -1321 . DOI:10.1063/1.98716http://doi.org/10.1063/1.98716 .

M. Razeghi , 等 . First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate . Appl. Phys. Lett. , 1988 . 53 2389 -2390 . DOI:10.1063/1.100239http://doi.org/10.1063/1.100239 .

L. Li , 等 . Growth of InAs/Sb: GaAs quantum dots on silicon substrate with high density and efficient light emission in the 1.3 µm band . Appl. Phys. Lett. , 2008 . 92 263105 DOI:10.1063/1.2952594http://doi.org/10.1063/1.2952594.

A. Y. Liu , 等 . High performance continuous wave 1.3 μm quantum dot lasers on silicon . Appl. Phys. Lett. , 2014 . 104 041104 DOI:10.1063/1.4863223http://doi.org/10.1063/1.4863223 .

E. Tournié , 等 . Metamorphic Ⅲ–Ⅴ semiconductor lasers grown on silicon . MRS Bull. , 2016 . 41 218 -223 . DOI:10.1557/mrs.2016.24http://doi.org/10.1557/mrs.2016.24 .

S. M. Chen , 等 . Electrically pumped continuous-wave Ⅲ–Ⅴ quantum dot lasers on silicon . Nat. Photonics , 2016 . 10 307 -311 . DOI:10.1038/nphoton.2016.21http://doi.org/10.1038/nphoton.2016.21 .

M. Kawabe , T. Ueda . Self-annihilation of antiphase boundary in GaAs on Si(100) grown by molecular beam epitaxy . Jpn. J. Appl. Phys. , 1987 . 26 L944 -L946 . DOI:10.1143/JJAP.26.L944http://doi.org/10.1143/JJAP.26.L944 .

H. Noge , 等 . Molecular beam epitaxial growth of a GaAs layer free from antiphase domains on an exactly (100)-oriented Si substrate preheated at 1000 ℃ . J. Cryst. Growth , 1987 . 83 431 -436 . DOI:10.1016/0022-0248(87)90306-Xhttp://doi.org/10.1016/0022-0248(87)90306-X .

K. Volz , 等 . GaP-nucleation on exact Si (001) substrates for Ⅲ/Ⅴ device integration . J. Cryst. Growth , 2011 . 315 37 -47 . DOI:10.1016/j.jcrysgro.2010.10.036http://doi.org/10.1016/j.jcrysgro.2010.10.036 .

Y. Bogumilowicz , 等 . Anti-phase boundaries–Free GaAs epilayers on "quasi-nominal" Ge-buffered silicon substrates . Appl. Phys. Lett. , 2015 . 107 212105 DOI:10.1063/1.4935943http://doi.org/10.1063/1.4935943 .

R. Alcotte , 等 . Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility . APL Mater. , 2016 . 4 046101 DOI:10.1063/1.4945586http://doi.org/10.1063/1.4945586 .

M. T. H. Ha , 等 . Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si(001) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition . Mater. Res. Express , 2017 . 4 085901 DOI:10.1088/2053-1591/aa8043http://doi.org/10.1088/2053-1591/aa8043 .

J. Kwoen , 等 . All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001) . Opt. Express , 2018 . 26 11568 -11576 . DOI:10.1364/OE.26.011568http://doi.org/10.1364/OE.26.011568 .

S. Zhu , 等 . Room-temperature electrically-pumped 1.5 µm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si . Opt. Express , 2018 . 26 14514 -14523 . DOI:10.1364/OE.26.014514http://doi.org/10.1364/OE.26.014514 .

J. Kwoen , 等 . Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer . Jpn. J. Appl. Phys. , 2019 . 58 SBBE07 DOI:10.7567/1347-4065/aaffc2http://doi.org/10.7567/1347-4065/aaffc2 .

K. S. Li , 等 . Inversion boundary annihilation in GaAs monolithically grown on on-axis silicon (001) . Adv. Optical Mater. , 2020 . 8 2000970 DOI:10.1002/adom.202000970http://doi.org/10.1002/adom.202000970 .

Y. T. Wan , 等 . Low threshold quantum dot lasers directly grown on unpatterned quasi-nominal (001) Si . IEEE J. Sel. Top. Quantum Electron. , 2020 . 26 1900409 DOI:10.1109/JSTQE.2020.2964381http://doi.org/10.1109/JSTQE.2020.2964381 .

Z. C. Wang , 等 . Ⅲ–Ⅴs on Si for photonic applications—a monolithic approach . Mater. Sci. Eng.: B , 2012 . 177 1551 -1557 . DOI:10.1016/j.mseb.2011.12.006http://doi.org/10.1016/j.mseb.2011.12.006 .

Z. C. Wang , 等 . Room-temperature InP distributed feedback laser array directly grown on silicon . Nat. Photonics , 2015 . 9 837 -842 . DOI:10.1038/nphoton.2015.199http://doi.org/10.1038/nphoton.2015.199 .

Q. Li , K. W. Ng , K. M. Lau . Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon . Appl. Phys. Lett. , 2015 . 106 072105 DOI:10.1063/1.4913432http://doi.org/10.1063/1.4913432 .

W. Q. Wei , 等 . InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm . Appl. Phys. Lett. , 2018 . 113 053107 DOI:10.1063/1.5043169http://doi.org/10.1063/1.5043169 .

B. Shi , 等 . Continuous-wave electrically pumped 1550 nm lasers epitaxially grown on on-axis (001) silicon . Optica , 2019 . 6 1507 -1514 . DOI:10.1364/OPTICA.6.001507http://doi.org/10.1364/OPTICA.6.001507 .

Y. Xue , 等 . 1.55 µm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon . Opt. Express , 2020 . 28 18172 -18179 . DOI:10.1364/OE.392120http://doi.org/10.1364/OE.392120 .

B. Shi , 等 . Selective area heteroepitaxy of low dislocation density antiphase boundary free GaAs microridges on flat-bottom (001) Si for integrated silicon photonics . Appl. Phys. Lett. , 2021 . 118 122106 DOI:10.1063/5.0043027http://doi.org/10.1063/5.0043027 .

A. Jallipalli , 等 . 1.54 µm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays . Electron. Lett. , 2007 . 43 1198 -1199 . DOI:10.1049/el:20072441http://doi.org/10.1049/el:20072441 .

E. Tournié , 等 . Epitaxial integration of antimonide-based semiconductor lasers on Si . Semiconductors Semimet. , 2018 . 99 1 -25 . DOI:10.1016/bs.semsem.2018.08.002http://doi.org/10.1016/bs.semsem.2018.08.002 .

M. R. Calvo , 等 . Crystal phase control during epitaxial hybridization of Ⅲ-Ⅴ semiconductors with silicon . Adv. Electron. Mater. , 2022 . 8 2100777 DOI:10.1002/aelm.202100777http://doi.org/10.1002/aelm.202100777 .

C. Cornet , 等 . Zinc-blende group Ⅲ-Ⅴ/group Ⅳ epitaxy: importance of the miscut . Phys. Rev. Mater. , 2020 . 4 053401 DOI:10.1103/PhysRevMaterials.4.053401http://doi.org/10.1103/PhysRevMaterials.4.053401 .

Calvo, M. R. Epitaxy of GaSb on On-Axis (001) Si for Integrated Optoelectronics. PhD thesis, University of Montpellier (2020).

T. Cerba , 等 . Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition . Thin Solid Films , 2018 . 645 5 -9 . DOI:10.1016/j.tsf.2017.10.024http://doi.org/10.1016/j.tsf.2017.10.024 .

Garbuzov, D. Z. et al. 2.3- to 2.7-μm room-temperature cw operation of InGaAsSb/AlGaAsSb broad-contact and single-mode ridge-waveguide SCH-QW diode lasers. In Proc. SPIE 3628, In-Plane Semiconductor Lasers Ⅲ, 124–129 (SPIE, 1999).

E. Tournié , A. N. Baranov . Mid-infrared semiconductor lasers: a review . Semiconductors Semimet. , 2012 . 86 183 -226 . DOI:10.1016/B978-0-12-391066-0.00005-8http://doi.org/10.1016/B978-0-12-391066-0.00005-8 .

Belenky, G. et al. In Semiconductor Lasers (eds. Baranov, A. & Tournié, E.) 441–486 (Elsevier, 2013).

J. van der Ziel , 等 . Optically pumped laser oscillation in the 1.6–1.8 µm region from strained layer Al0.4Ga0.6Sb/GaSb/Al0.4Ga0.6Sb/double heterostructures grown by molecular beam hetero-epitaxy on Si substrates . IEEE J. Quantum Electron. , 1986 . 22 1587 -1592 . DOI:10.1109/JQE.1986.1073180http://doi.org/10.1109/JQE.1986.1073180 .

J. B. Rodriguez , 等 . Room-temperature operation of a 2.25 μm electrically pumped laser fabricated on a silicon substrate . Appl. Phys. Lett. , 2009 . 94 061124 DOI:10.1063/1.3082098http://doi.org/10.1063/1.3082098 .

A. Salhi , 等 . Very-low-threshold 2.4-µm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime . IEEE Photonics Technol. Lett. , 2004 . 16 2424 -2426 . DOI:10.1109/LPT.2004.835623http://doi.org/10.1109/LPT.2004.835623 .

K. Madiomanana , 等 . Silicon surface preparation for Ⅲ-Ⅴ molecular beam epitaxy . J. Cryst. Growth , 2015 . 413 17 -24 . DOI:10.1016/j.jcrysgro.2014.12.004http://doi.org/10.1016/j.jcrysgro.2014.12.004 .

C. Lauer , O. Dier , M. C. Amann . Low-resistive metal/n+-InAsSb/n-GaSb contacts . Semiconductor Sci. Technol. , 2006 . 21 1274 -1277 . DOI:10.1088/0268-1242/21/9/011http://doi.org/10.1088/0268-1242/21/9/011 .

J. B. Rodriguez , L. Cerutti . GaSb-based, 2.2 μm type-Ⅰ laser fabricated on GaAs substrate operating continuous wave at room temperature . Appl. Phys. Lett. , 2009 . 94 023506 DOI:10.1063/1.3072596http://doi.org/10.1063/1.3072596 .

P. Apiratikul , L. He , C. J. K. Richardson . 2 μm laterally coupled distributed-feedback GaSb-based metamorphic laser grown on a GaAs substrate . Appl. Phys. Lett. , 2013 . 102 231101 DOI:10.1063/1.4808265http://doi.org/10.1063/1.4808265 .

L. Monge-Bartolome , 等 . GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates . Opt. Express , 2021 . 29 11268 -11276 . DOI:10.1364/OE.419396http://doi.org/10.1364/OE.419396 .

Q. Li , B. Lai , K. M. Lau . Epitaxial growth of GaSb on Ⅴ-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer . Appl. Phys. Lett. , 2017 . 111 172103 DOI:10.1063/1.5000100http://doi.org/10.1063/1.5000100 .

L. Monge-Bartolome , 等 . Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template . Opt. Express , 2020 . 28 20785 -20793 . DOI:10.1364/OE.397164http://doi.org/10.1364/OE.397164 .

Monge Bartolomé, L. Toward Mid-Infrared Semiconductor Lasers on Silicon Photonic Integrated Circuits. PhD thesis, University of Montpellier (2021).

K. S. Gadedjisso-Tossou , 等 . Recombination channels in 2.4-3.2 µm GaInAsSb quantum-well lasers . Semiconductor Sci. Technol. , 2013 . 28 015015 DOI:10.1088/0268-1242/28/1/015015http://doi.org/10.1088/0268-1242/28/1/015015 .

J. R. Meyer , 等 . Type-Ⅱ quantum-well lasers for the mid-wavelength infrared . Appl. Phys. Lett. , 1995 . 67 757 -759 . DOI:10.1063/1.115216http://doi.org/10.1063/1.115216 .

O. Cathabard , 等 . Quantum cascade lasers emitting near 2.6 μm . Appl. Phys. Lett. , 2010 . 96 141110 DOI:10.1063/1.3385778http://doi.org/10.1063/1.3385778.

Van H. Nguyen , 等 . Long wavelength (λ > 17 µm) distributed feedback quantum cascade lasers operating in a continuous wave at room temperature . Photonics , 2019 . 6 31 DOI:10.3390/photonics6010031http://doi.org/10.3390/photonics6010031 .

N. Deguffroy , 等 . Molecular-beam epitaxy of InSb/GaSb quantum dots . J. Appl. Phys. , 2007 . 101 124309 DOI:10.1063/1.2748872http://doi.org/10.1063/1.2748872 .

S. I. Rybchenko , 等 . Conduction-band crossover induced by misfit strain in InSb∕GaSb self-assembled quantum dots . Phys. Rev. B , 2007 . 76 193309 DOI:10.1103/PhysRevB.76.193309http://doi.org/10.1103/PhysRevB.76.193309 .

Lambrecht, A. & Schmitt, K. In Mid-Infrared Optoelectronics (eds Tournié, E. & Cerutti, L.) 661–715 (Elsevier, 2020).

Q. Durlin , 等 . Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-Ⅱ superlattice grown by molecular beam epitaxy on Si substrate . Infrared Phys. Technol. , 2019 . 96 39 -43 . DOI:10.1016/j.infrared.2018.10.006http://doi.org/10.1016/j.infrared.2018.10.006 .

J. M. Fastenau , 等 . Direct MBE growth of metamorphic nBn infrared photodetectors on 150 mm Ge-Si substrates for heterogeneous integration . J. Vac. Sci. Technol. B , 2019 . 37 031216 DOI:10.1116/1.5088784http://doi.org/10.1116/1.5088784 .

B. Schwarz , 等 . Monolithically integrated mid-infrared lab-on-a-chip using plasmonics and quantum cascade structures . Nat. Commun. , 2014 . 5 4085 DOI:10.1038/ncomms5085http://doi.org/10.1038/ncomms5085 .

H. Lotfi , 等 . Monolithically integrated mid-IR interband cascade laser and photodetector operating at room temperature . Appl. Phys. Lett. , 2016 . 109 151111 DOI:10.1063/1.4964837http://doi.org/10.1063/1.4964837 .

Y. J. Zhang , 等 . Inclined emitting slotted single-mode laser with 1.7° vertical divergence angle for PIC applications . Opt. Lett. , 2018 . 43 86 -89 . DOI:10.1364/OL.43.000086http://doi.org/10.1364/OL.43.000086 .

B.1. Shi , 等 . 55-μm lasers epitaxially grown on silicon . IEEE J. Sel. Top. Quantum Electron. , 2019 . 25 1900711 DOI:10.1109/JSTQE.2019.2927579http://doi.org/10.1109/JSTQE.2019.2927579 .

Y. Han , 等 . Selectively grown Ⅲ-Ⅴ lasers for integrated Si-photonics . J. Lightwave Technol. , 2021 . 39 940 -948 . DOI:10.1109/JLT.2020.3041348http://doi.org/10.1109/JLT.2020.3041348 .

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

综述：硅基外延生长的中红外III-V族半导体激光器

暂无数据