Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

Hieu. P. T. Nguyen

doi:10.1038/s41377-022-00861-1

Go to Nature Website

Your Location：

Home >

Browse articles >

Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

News & Views

- Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices
- Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices
- Light: Science & Applications 2022年11卷第7期页码：1318-1319
- Affiliations：
  
  1.New Jersey Institute of Technology, Department of Electrical & Computer Engineering, Newark, NJ, 07102, USA
- Author bio：
  
  Hieu P. T. Nguyen (hieu.p.nguyen@njit.edu)
- Funds：
- DOI：10.1038/s41377-022-00861-1
  中图分类号：
Scan for full text
Hieu. P. T. Nguyen. Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices[J]. Light: Science & Applications, 2022,11(7):1318-1319.

Nguyen, H. P. T. Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices. Light: Science & Applications, 11, 1318-1319 (2022).
Hieu. P. T. Nguyen. Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices[J]. Light: Science & Applications, 2022,11(7):1318-1319. DOI： 10.1038/s41377-022-00861-1.

Nguyen, H. P. T. Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices. Light: Science & Applications, 11, 1318-1319 (2022). DOI： 10.1038/s41377-022-00861-1.

摘要

Abstract

Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.

关键词

Keywords

references

A. Khan , K. Balakrishnan , T. Katona . Ultraviolet light-emitting diodes based on group three nitrides . Nat. Photonics , 2008 . 2 77 -84 . DOI:10.1038/nphoton.2007.293http://doi.org/10.1038/nphoton.2007.293 .

R. T. Velpula , 等 . Epitaxial growth and characterization of AlInN-based core-shell nanowire light emitting diodes operating in the ultraviolet spectrum . Sci. Rep. , 2020 . 10 2547 DOI:10.1038/s41598-020-59442-0http://doi.org/10.1038/s41598-020-59442-0 .

Q. Cai , 等 . Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays . Light Sci. Appl. , 2021 . 10 94 DOI:10.1038/s41377-021-00527-4http://doi.org/10.1038/s41377-021-00527-4 .

J. R. Grandusky , 等 . 270 nm pseudomorphic ultraviolet light-emitting diodes with over 60 mW continuous wave output power . Appl. Phys. Express , 2013 . 6 032101 DOI:10.7567/APEX.6.032101http://doi.org/10.7567/APEX.6.032101 .

M. Kneissl , 等 . The emergence and prospects of deep-ultraviolet light-emitting diode technologies . Nat. Photonics , 2019 . 13 233 -244 . DOI:10.1038/s41566-019-0359-9http://doi.org/10.1038/s41566-019-0359-9 .

Y. Muramoto , M. Kimura , S. Nouda . Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp . Semicond. Sci. Technol. , 2014 . 29 084004 DOI:10.1088/0268-1242/29/8/084004http://doi.org/10.1088/0268-1242/29/8/084004 .

J. Han , 等 . AlGaN/GaN quantum well ultraviolet light emitting diodes . Appl. Phys. Lett. , 1998 . 73 1688 -1690 . DOI:10.1063/1.122246http://doi.org/10.1063/1.122246 .

Y. Taniyasu , M. Kasu , T. Makimoto . An aluminium nitride light-emitting diode with a wavelength of 210 nanometres . Nature , 2006 . 441 325 -328 . DOI:10.1038/nature04760http://doi.org/10.1038/nature04760 .

T. Takano , 等 . Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency . Appl. Phys. Express , 2017 . 10 031002 DOI:10.7567/APEX.10.031002http://doi.org/10.7567/APEX.10.031002 .

J. G. Zhao , 等 . High internal quantum efficiency of nonpolar a-plane AlGaN-based multiple quantum wells grown on r-plane sapphire substrate . ACS Photonics , 2018 . 5 1903 -1906 . DOI:10.1021/acsphotonics.8b00283http://doi.org/10.1021/acsphotonics.8b00283 .

S. C. Jain , 等 . Ⅲ–nitrides: growth, characterization, and properties . J. Appl. Phys. , 2000 . 87 965 -1006 . DOI:10.1063/1.371971http://doi.org/10.1063/1.371971 .

S. I. Inoue , 等 . Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure . Appl. Phys. Lett. , 2015 . 106 131104 DOI:10.1063/1.4915255http://doi.org/10.1063/1.4915255 .

D. Lee , 等 . Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates . Appl. Phys. Lett. , 2017 . 110 191103 DOI:10.1063/1.4983283http://doi.org/10.1063/1.4983283 .

H. Hirayama , 等 . 231–261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire . Appl. Phys. Lett. , 2007 . 91 071901 DOI:10.1063/1.2770662http://doi.org/10.1063/1.2770662 .

H. L. Chang , 等 . Graphene-induced crystal-healing of AlN film by thermal annealing for deep ultraviolet light-emitting diodes . Appl. Phys. Lett. , 2020 . 117 181103 DOI:10.1063/5.0028094http://doi.org/10.1063/5.0028094 .

N. Xie , 等 . Stress evolution in AlN growth on nano-patterned sapphire substrates . Appl. Phys. Express , 2020 . 13 015504 DOI:10.7567/1882-0786/ab582chttp://doi.org/10.7567/1882-0786/ab582c .

H. L. Chang , 等 . Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode . Light Sci. Appl. , 2022 . 11 88 DOI:10.1038/s41377-022-00756-1http://doi.org/10.1038/s41377-022-00756-1 .

S. H. Bae , 等 . Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy . Nat. Nanotechnol. , 2020 . 15 272 -276 . DOI:10.1038/s41565-020-0633-5http://doi.org/10.1038/s41565-020-0633-5 .

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

暂无数据