1.Institute of Advanced Materials and School of Chemistry and Chemical Engineering, Southeast University, 211189, Nanjing, China
2.Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, China
3.Advanced Materials and Liquid Crystal Institute and Chemical Physics Interdisciplinary Program, Kent State University, Kent, OH, 44242, USA
Wei Xu (wxu@iccas.ac.cn)
Quan Li (quanli3273@gmail.com)
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Ying-Shi Guan, Jing Qiao, Yingying Liang, 等. A high mobility air-stable n-type organic small molecule semiconductor with high UV–visible-to-NIR photoresponse[J]. Light: Science & Applications, 2022,11(9):2140-2146.
Guan, Y. S. et al. A high mobility air-stable n-type organic small molecule semiconductor with high UV–visible-to-NIR photoresponse. Light: Science & Applications, 11, 2140-2146 (2022).
Ying-Shi Guan, Jing Qiao, Yingying Liang, 等. A high mobility air-stable n-type organic small molecule semiconductor with high UV–visible-to-NIR photoresponse[J]. Light: Science & Applications, 2022,11(9):2140-2146. DOI: 10.1038/s41377-022-00936-z.
Guan, Y. S. et al. A high mobility air-stable n-type organic small molecule semiconductor with high UV–visible-to-NIR photoresponse. Light: Science & Applications, 11, 2140-2146 (2022). DOI: 10.1038/s41377-022-00936-z.
An organic semiconductor with high carrier mobility and efficient light absorption over a wide spectral range is of the most important yet challenging material for constructing a broadband responsive organic photodetector. However, the development of such organic semiconductors, especially for air-stable n-type organic small molecule semiconductors, is still at an early stage. Here we report the fabrication of high-performance n-type semiconducting crystalline nanosheets and the development of air-stable field-effect transistors, phototransistors, with high response over a broad spectrum. The n-type small molecule semiconductor is assembled into a crystalline nanosheet based on the solvent-phase interfacial self-assembly method. N-type field-effect transistors with high electron mobility are fabricated and their electrical performances exhibit excellent air stability. Impressively, the demonstrated phototransistors exhibit an ultrahigh responsivity over a wide spectral range from 365 to 940 nm, with a maximum photoresponsivity of 9.2 × 10,5, A W,−1, and specific detectivity of 5.26 × 10,13, Jones, which is the best performance among the reported n-type organic small molecule-based phototransistors.
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