Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Chen Shang; Kaiyin Feng; Eamonn T. Hughes; Andrew Clark; Mukul Debnath; Rosalyn Koscica; Gerald Leake; Joshua Herman; David Harame; Peter Ludewig; Yating Wan; John E. Bowers

doi:10.1038/s41377-022-00982-7

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Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Original Articles

- Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers
- Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers
- LSA 2022年11卷第11期页码：2698-2705
- Affiliations：
  
  1.Materials Department, University of California Santa Barbara, Santa Barbara, CA, 93106, USA
  2.Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, 93106, USA
  3.IQE, Inc., Greensboro, NC, 27409, USA
  4.RF SUNY Polytechnic Institute, Albany, NY, 12203, USA
  5.NAsPⅢ/Ⅴ GmbH, Marburg, Germany
- Author bio：
  
  John E. Bowers (bowers@ece.ucsb.edu)
- Funds：
- DOI：10.1038/s41377-022-00982-7
  中图分类号：
- 纸质出版日期：2022-11-30，
  
  网络出版日期：2022-10-14，
  
  收稿日期：2022-05-16，
  
  修回日期：2022-09-13，
  
  录用日期：2022-09-14
- Accepted：
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Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers[J]. LSA, 2022,11(11):2698-2705.

Shang, C. et al. Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers. Light: Science & Applications, 11, 2698-2705 (2022).
Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers[J]. LSA, 2022,11(11):2698-2705. DOI： 10.1038/s41377-022-00982-7.

Shang, C. et al. Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers. Light: Science & Applications, 11, 2698-2705 (2022). DOI： 10.1038/s41377-022-00982-7.

摘要

Abstract

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of Ⅲ–Ⅴ devices on Si at elevated temperatures. Yet

thick

defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator waveguides. Here

we demonstrate the first electrically pumped QD lasers grown by molecular beam epitaxy on a 300 mm patterned (001) Si wafer with a butt-coupled configuration. Unique growth and fabrication challenges imposed by the template architecture have been resolved

contributing to continuous wave lasing to 60 ℃ and a maximum double-side output power of 126.6 mW at 20 ℃ with a double-side wall-plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.

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references

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