InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering

Yuanpeng Wu; Yixin Xiao; Ishtiaque Navid; Kai Sun; Yakshita Malhotra; Ping Wang; Ding Wang; Yuanxiang Xu; Ayush Pandey; Maddaka Reddeppa; Walter Shin; Jiangnan Liu; Jungwook Min; Zetian Mi

doi:10.1038/s41377-022-00985-4

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InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering

Original Articles

- InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering
- InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering
- LSA 2022年11卷第10期页码：2540-2548
- Affiliations：
  
  1.Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA
  2.Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109, USA
- Author bio：
  
  Zetian Mi (ztmi@umich.edu)
- Funds：
- DOI：10.1038/s41377-022-00985-4
  中图分类号：
- 纸质出版日期：2022-10-31，
  
  网络出版日期：2022-10-10，
  
  收稿日期：2022-06-20，
  
  修回日期：2022-09-16，
  
  录用日期：2022-09-19
- Accepted：
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InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering[J]. LSA, 2022,11(10):2540-2548.

Wu, Y. P. et al. InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering. Light: Science & Applications, 11, 2540-2548 (2022).
InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering[J]. LSA, 2022,11(10):2540-2548. DOI： 10.1038/s41377-022-00985-4.

Wu, Y. P. et al. InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering. Light: Science & Applications, 11, 2540-2548 (2022). DOI： 10.1038/s41377-022-00985-4.

摘要

Abstract

Micro or submicron scale light-emitting diodes (µLEDs) have been extensively studied recently as the next-generation display technology. It is desired that µLEDs exhibit high stability and efficiency

submicron pixel size

and potential monolithic integration with Si-based complementary metal-oxide-semiconductor (CMOS) electronics. Achieving such µLEDs

however

has remained a daunting challenge. The polar nature of Ⅲ-nitrides causes severe wavelength/color instability with varying carrier concentrations in the active region. The etching-induced surface damages and poor material quality of high indium composition InGaN quantum wells (QWs) severely deteriorate the performance of µLEDs

particularly those emitting in the green/red wavelength. Here we report

for the first time

µLEDs grown directly on Si with submicron lateral dimensions. The µLEDs feature ultra-stable

bright green emission with negligible quantum-confined Stark effect (QCSE). Detailed elemental mapping and numerical calculations show that the QCSE is screened by introducing polarization doping in the active region

which consists of InGaN/AlGaN QWs surrounded by an AlGaN/GaN shell with a negative Al composition gradient along the

-axis. In comparison with conventional GaN barriers

AlGaN barriers are shown to effectively compensate for the tensile strain within the active region

which significantly reduces the strain distribution and results in enhanced indium incorporation without compromising the material quality. This study provides new insights and a viable path for the design

fabrication

and integration of high-performance µLEDs on Si for a broad range of applications in on-chip optical communication and emerging augmented reality/mixed reality devices

and so on.

关键词

Keywords

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