High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction

Xiaomeng Xue; Menglu Chen; Yuning Luo; Tianling Qin; Xin Tang; Qun Hao

doi:10.1038/s41377-022-01014-0

Go to Nature Website

Your Location：

Home >

Browse articles >

High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction

Original Articles

- High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction
- High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction
- 光：科学与应用 2023年12卷第3期页码：355-365
- Affiliations：
  
  1.School of Optics and Photonics, Beijing Institute of Technology, No. 5 Zhongguancun South Street, Beijing, China
  2.Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing, China
  3.Yangtze Delta Region Academy of Beijing Institute of Technology, Beijing, China
- Author bio：
  
  Menglu Chen (menglu@bit.edu.cn)
  Xin Tang (xintang@bit.edu.cn)
  Qun Hao (qhao@bit.edu.cn)
- Funds：
- DOI：10.1038/s41377-022-01014-0
  中图分类号：
- 纸质出版日期：2023-3-31，
  
  网络出版日期：2023-1-1，
  
  收稿日期：2022-7-13，
  
  修回日期：2022-10-10，
  
  录用日期：2022-10-11
Scan for full text
High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction[J]. 光：科学与应用, 2023,12(3):355-365.

Xue, X.M. et al. High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction. Light: Science & Applications, 12, 355-365 (2023).
High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction[J]. 光：科学与应用, 2023,12(3):355-365. DOI： 10.1038/s41377-022-01014-0.

Xue, X.M. et al. High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction. Light: Science & Applications, 12, 355-365 (2023). DOI： 10.1038/s41377-022-01014-0.

摘要

Abstract

Due to thermal carriers generated by a narrow mid-infrared energy gap

cooling is always necessary to achieve ideal photodetection. In quantum dot (QD)

the electron thermal generation should be reduced with quantum confinement in all three dimensions. As a result

there would be a great potential to realize high-operating-temperature (HOT) QD mid-IR photodetectors

though not yet achieved. Taking the advantages of colloidal nanocrystals' solution processability and precise doping control by surface dipoles

this work demonstrates a HOT mid-infrared photodetector with a QD gradient homojunction. The detector achieves background-limited performance with

= 2.7 × 10

Jones on 4.2 μm at 80 K

above 10

Jones until 200 K

above 10

Jones until 280 K

and 7.6 × 10

Jones on 3.5 μm at 300 K. The external quantum efficiency also achieves more than 77% with responsivity 2.7 A/W at zero bias. The applications such as spectrometers

chemical sensors

and thermal cameras

are also approved

which motivate interest in low-cost

solution-processed and high-performance mid-infrared photodetection beyond epitaxial growth bulk photodetectors.

关键词

Keywords

references

Rogalski, A. Infrared Detectors 2nd edn (CRC Press, 2010).

J. Phillips. Evaluation of the fundamental properties of quantum dot infrared detectors. J. Appl. Phys., 2002. 914590-4594. DOI:10.1063/1.1455130http://doi.org/10.1063/1.1455130.

E. T. Kim, 等. High detectivity InAs quantum dot infrared photodetectors. Appl. Phys. Lett., 2004. 843277-3279. DOI:10.1063/1.1719259http://doi.org/10.1063/1.1719259.

S. Chakrabarti, 等. High-performance mid-infrared quantum dot infrared photodetectors. J. Phys. D Appl. Phys., 2005. 382135-2141. DOI:10.1088/0022-3727/38/13/009http://doi.org/10.1088/0022-3727/38/13/009.

R. S. Attaluri, 等. Resonant cavity enhanced InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetector. J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenom., 2007. 251186DOI:10.1116/1.2746054http://doi.org/10.1116/1.2746054.

K. T. Posani, 等. Nanoscale quantum dot infrared sensors with photonic crystal cavity. Appl. Phys. Lett., 2006. 88151104DOI:10.1063/1.2194167http://doi.org/10.1063/1.2194167.

A. Schliwa, M. Winkelnkemper, D. Bimberg. Impact of size, shape, and composition on piezoelectric effects and electronic properties of In (Ga)As/GaAs quantum dots. Phys. Rev. B, 2007. 76205324DOI:10.1103/PhysRevB.76.205324http://doi.org/10.1103/PhysRevB.76.205324.

M. V. Kovalenko, 等. Prospects of nanoscience with nanocrystals. ACS Nano, 2015. 91012-1057. DOI:10.1021/nn506223hhttp://doi.org/10.1021/nn506223h.

F. Guo, 等. The fabrication of color-tunable organic light-emitting diode displays via solution processing. Light Sci. Appl., 2017. 6e17094DOI:10.1038/lsa.2017.94http://doi.org/10.1038/lsa.2017.94.

F. P. García de Arquer, 等. Semiconductor quantum dots: technological progress and future challenges. Science, 2021. 373eaaz8541DOI:10.1126/science.aaz8541http://doi.org/10.1126/science.aaz8541.

C. Gréboval, 等. Mercury chalcogenide quantum dots: material perspective for device integration. Chem. Rev., 2021. 1213627-3700. DOI:10.1021/acs.chemrev.0c01120http://doi.org/10.1021/acs.chemrev.0c01120.

S. Keuleyan, 等. Mid-infrared HgTe colloidal quantum dot photodetectors. Nat. Photonics, 2011. 5489-493. DOI:10.1038/nphoton.2011.142http://doi.org/10.1038/nphoton.2011.142.

M. L. Chen, 等. High carrier mobility in HgTe quantum dot solids improves mid-IR photodetectors. ACS Photonics, 2019. 62358-2365. DOI:10.1021/acsphotonics.9b01050http://doi.org/10.1021/acsphotonics.9b01050.

E. Lhuillier, 等. Mid-infrared HgTe/As2S3 field effect transistors and photodetectors. Adv. Mater., 2013. 25137-141. DOI:10.1002/adma.201203012http://doi.org/10.1002/adma.201203012.

C. Livache, 等. A colloidal quantum dot infrared photodetector and its use for intraband detection. Nat. Commun., 2019. 102125DOI:10.1038/s41467-019-10170-8http://doi.org/10.1038/s41467-019-10170-8.

A. Khalili, 等. Guided-mode resonator coupled with nanocrystal intraband absorption. ACS Photonics, 2022. 9985-993. DOI:10.1021/acsphotonics.1c01847http://doi.org/10.1021/acsphotonics.1c01847.

P. Guyot-Sionnest, J. A. Roberts. Background limited mid-infrared photodetection with photovoltaic HgTe colloidal quantum dots. Appl. Phys. Lett., 2015. 107253104DOI:10.1063/1.4938135http://doi.org/10.1063/1.4938135.

M. M. Ackerman, X. Tang, P. Guyot-Sionnest. Fast and sensitive colloidal quantum dot mid-wave infrared photodetectors. ACS Nano, 2018. 127264-7271. DOI:10.1021/acsnano.8b03425http://doi.org/10.1021/acsnano.8b03425.

S. B. Hafiz, 等. Midwavelength infrared p-n heterojunction diodes based on intraband colloidal quantum dots. ACS Appl. Mater. Interfaces, 2021. 1349043-49049. DOI:10.1021/acsami.1c14749http://doi.org/10.1021/acsami.1c14749.

X. Tang, M. M. Ackerman, P. Guyot-Sionnest. Thermal imaging with plasmon resonance enhanced HgTe colloidal quantum dot photovoltaic devices. ACS Nano, 2018. 127362-7370. DOI:10.1021/acsnano.8b03871http://doi.org/10.1021/acsnano.8b03871.

X. Tang, 等. Dual-band infrared imaging using stacked colloidal quantum dot photodiodes. Nat. Photonics, 2019. 13277-282. DOI:10.1038/s41566-019-0362-1http://doi.org/10.1038/s41566-019-0362-1.

X. Tang, 等. Direct imprinting of quasi-3D nanophotonic structures into colloidal quantum-dot devices. Adv. Mater., 2020. 321906590DOI:10.1002/adma.201906590http://doi.org/10.1002/adma.201906590.

T. J. de Lyon, 等. Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications. J. Electron. Mater., 1998. 27550-555. DOI:10.1007/s11664-998-0014-6http://doi.org/10.1007/s11664-998-0014-6.

J. Yang, 等. Ligand-engineered HgTe colloidal quantum dot solids for infrared photodetectors. Nano Lett., 2022. 223465-3472. DOI:10.1021/acs.nanolett.2c00950http://doi.org/10.1021/acs.nanolett.2c00950.

J. S. Lee, 等. Band-like transport, high electron mobility and high photoconductivity in all-inorganic nanocrystal arrays. Nat. Nanotechnol., 2011. 6348-352. DOI:10.1038/nnano.2011.46http://doi.org/10.1038/nnano.2011.46.

D. Zhitomirsky, 等. N-type colloidal-quantum-dot solids for photovoltaics. Adv. Mater., 2012. 246181-6185. DOI:10.1002/adma.201202825http://doi.org/10.1002/adma.201202825.

M. I. Nugraha, 等. Enabling ambipolar to heavy n-type transport in PbS quantum dot solids through doping with organic molecules. ACS Appl. Mater. Interfaces, 2017. 918039-18045. DOI:10.1021/acsami.7b02867http://doi.org/10.1021/acsami.7b02867.

J. Tang, 等. Quantum junction solar cells. Nano Lett., 2012. 124889-4894. DOI:10.1021/nl302436rhttp://doi.org/10.1021/nl302436r.

M. J. Choi, 等. Cascade surface modification of colloidal quantum dot inks enables efficient bulk homojunction photovoltaics. Nat. Commun., 2020. 11103DOI:10.1038/s41467-019-13437-2http://doi.org/10.1038/s41467-019-13437-2.

X. Z. Lan, 等. Quantum dot solids showing state-resolved band-like transport. Nat. Mater., 2020. 19323-329. DOI:10.1038/s41563-019-0582-2http://doi.org/10.1038/s41563-019-0582-2.

M. L. Chen, 等. Magnetoresistance of high mobility HgTe quantum dot films with controlled charging. J. Mater. Chem. C, 2022. 1013771-13777. DOI:10.1039/D1TC05202Khttp://doi.org/10.1039/D1TC05202K.

Z. Y. Deng, K. S. Jeong, P. Guyot-Sionnest. Colloidal quantum dots intraband photodetectors. ACS Nano, 2014. 811707-11714. DOI:10.1021/nn505092ahttp://doi.org/10.1021/nn505092a.

M. L. Chen, P. Guyot-Sionnest. Reversible electrochemistry of mercury chalcogenide colloidal quantum dot films. ACS Nano, 2017. 114165-4173. DOI:10.1021/acsnano.7b01014http://doi.org/10.1021/acsnano.7b01014.

G. Allan, C. Delerue. Tight-binding calculations of the optical properties of HgTe nanocrystals. Phys. Rev. B, 2012. 86165437DOI:10.1103/PhysRevB.86.165437http://doi.org/10.1103/PhysRevB.86.165437.

M. H. Hudson, 等. Conduction band fine structure in colloidal HgTe quantum dots. ACS Nano, 2018. 129397-9404. DOI:10.1021/acsnano.8b04539http://doi.org/10.1021/acsnano.8b04539.

Y. Park, 等. Work function of indium tin oxide transparent conductor measured by photoelectron spectroscopy. Appl. Phys. Lett., 1996. 682699-2701. DOI:10.1063/1.116313http://doi.org/10.1063/1.116313.

A. Rogalski. Infrared detectors: status and trends. Prog. Quantum Electron., 2003. 2759-210. DOI:10.1016/S0079-6727(02)00024-1http://doi.org/10.1016/S0079-6727(02)00024-1.

C. Gréboval, 等. Photoconductive focal plane array based on HgTe quantum dots for fast and cost-effective short-wave infrared imaging. Nanoscale, 2022. 149359-9368. DOI:10.1039/D2NR01313Dhttp://doi.org/10.1039/D2NR01313D.

V. A. Markel. Introduction to the Maxwell Garnett approximation: tutorial. J. Optical Soc. Am. A, 2016. 331244-1256. DOI:10.1364/JOSAA.33.001244http://doi.org/10.1364/JOSAA.33.001244.

J. Baars, F. Sorger. Reststrahlen spectra of HgTe and CdxHg1-xTe. Solid State Commun., 1972. 10875-878. DOI:10.1016/0038-1098(72)90211-6http://doi.org/10.1016/0038-1098(72)90211-6.

M. Califano, A. Franceschetti, A. Zunger. Temperature dependence of excitonic radiative decay in CdSe quantum dots: the role of surface hole traps. Nano Lett., 2005. 52360-2364. DOI:10.1021/nl051027phttp://doi.org/10.1021/nl051027p.

P. Guyot-Sionnest. Electrical transport in colloidal quantum dot films. J. Phys. Chem. Lett., 2012. 31169-1175. DOI:10.1021/jz300048yhttp://doi.org/10.1021/jz300048y.

M. Y. Chen, 等. Mercury telluride quantum dot based phototransistor enabling high-sensitivity room-temperature photodetection at 2000 nm. ACS Nano, 2017. 115614-5622. DOI:10.1021/acsnano.7b00972http://doi.org/10.1021/acsnano.7b00972.

M. L. Chen, 等. Mid-infrared intraband photodetector via high carrier mobility HgSe colloidal quantum dots. ACS Nano, 2022. 1611027-11035. DOI:10.1021/acsnano.2c03631http://doi.org/10.1021/acsnano.2c03631.

G. H. Shen, M. L. Chen, P. Guyot-Sionnest. Synthesis of nonaggregating HgTe colloidal quantum dots and the emergence of air-stable n-doping. J. Phys. Chem. Lett., 2017. 82224-2228. DOI:10.1021/acs.jpclett.7b00775http://doi.org/10.1021/acs.jpclett.7b00775.

J. M. Luther, 等. Structural, optical, and electrical properties of self-assembled films of PbSe nanocrystals treated with 1, 2-ethanedithiol. ACS Nano, 2008. 2271-280. DOI:10.1021/nn7003348http://doi.org/10.1021/nn7003348.

M. H. Zarghami, 等. P-type PbSe and PbS quantum dot solids prepared with short-chain acids and diacids. ACS Nano, 2010. 42475-2485. DOI:10.1021/nn100339bhttp://doi.org/10.1021/nn100339b.

D. Pal, E. Towe. Characteristics of high-operating-temperature InAs/GaAs quantum-dot infrared detectors. Appl. Phys. Lett., 2006. 88153109DOI:10.1063/1.2193466http://doi.org/10.1063/1.2193466.

H. Lim, 等. High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature. Appl. Phys. Lett., 2007. 90131112DOI:10.1063/1.2719160http://doi.org/10.1063/1.2719160.

A. Yakimov, 等. Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate. Nanoscale Res. Lett., 2013. 8217DOI:10.1186/1556-276X-8-217http://doi.org/10.1186/1556-276X-8-217.

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

Light | 室温中红外量子点探测器

暂无数据