Phase-controlled van der Waals growth of wafer-scale 2D MoTe<sub>2</sub> layers for integrated high-sensitivity broadband infrared photodetection

Di Wu; Chenguang Guo; Longhui Zeng; Xiaoyan Ren; Zhifeng Shi; Long Wen; Qin Chen; Meng Zhang; Xin Jian Li; Chong-Xin Shan; Jiansheng Jie

doi:10.1038/s41377-022-01047-5

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Phase-controlled van der Waals growth of wafer-scale 2D MoTe₂ layers for integrated high-sensitivity broadband infrared photodetection

Original Articles

- Phase-controlled van der Waals growth of wafer-scale 2D MoTe₂ layers for integrated high-sensitivity broadband infrared photodetection
- Phase-controlled van der Waals growth of wafer-scale 2D MoTe₂ layers for integrated high-sensitivity broadband infrared photodetection
- 光：科学与应用 2023年12卷第1期页码：77-88
- Affiliations：
  
  1.School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education, Zhengzhou University, Zhengzhou, Henan, 450052, China
  2.Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA, 92093, USA
  3.Institute of Nanophotonics, Jinan University, Guangzhou, Guangdong, 511443, China
  4.Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, China
- Author bio：
  
  Longhui Zeng (lhzeng.hfut@gmail.com)
  Xin Jian Li (lixj@zzu.edu.cn)
  Jiansheng Jie (jsjie@suda.edu.cn)
- Funds：
- DOI：10.1038/s41377-022-01047-5
  中图分类号：
- 纸质出版日期：2023-1-31，
  
  网络出版日期：2023-1-2，
  
  收稿日期：2022-9-9，
  
  修回日期：2022-11-21，
  
  录用日期：2022-11-25
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Phase-controlled van der Waals growth of wafer-scale 2D MoTe₂ layers for integrated high-sensitivity broadband infrared photodetection[J]. 光：科学与应用, 2023,12(1):77-88.

Wu, D. et al. Phase-controlled van der Waals growth of wafer-scale 2D MoTe₂ layers for integrated high-sensitivity broadband infrared photodetection. Light: Science & Applications, 12, 77-88 (2023).
Phase-controlled van der Waals growth of wafer-scale 2D MoTe₂ layers for integrated high-sensitivity broadband infrared photodetection[J]. 光：科学与应用, 2023,12(1):77-88. DOI： 10.1038/s41377-022-01047-5.

Wu, D. et al. Phase-controlled van der Waals growth of wafer-scale 2D MoTe₂ layers for integrated high-sensitivity broadband infrared photodetection. Light: Science & Applications, 12, 77-88 (2023). DOI： 10.1038/s41377-022-01047-5.

摘要

Abstract

Being capable of sensing broadband infrared (IR) light is vitally important for wide-ranging applications from fundamental science to industrial purposes. Two-dimensional (2D) topological semimetals are being extensively explored for broadband IR detection due to their gapless electronic structure and the linear energy dispersion relation. However

the low charge separation efficiency

high noise level

and on-chip integration difficulty of these semimetals significantly hinder their further technological applications. Here

we demonstrate a facile thermal-assisted tellurization route for the van der Waals (vdW) growth of wafer-scale phase-controlled 2D MoTe

layers. Importantly

the type-II Weyl semimetal 1T′-MoTe

features a unique orthorhombic lattice structure with a broken inversion symmetry

which ensures efficient carrier transportation and thus reduces the carrier recombination. This characteristic is a key merit for the well-designed 1T′-MoTe

/Si vertical Schottky junction photodetector to achieve excellent performance with an ultrabroadband detection range of up to 10.6 µm and a large room temperature specific detectivity of over 10

Jones in the mid-infrared (MIR) range. Moreover

the large-area synthesis of 2D MoTe

layers enables the demonstration of high-resolution uncooled MIR imaging capability by using an integrated device array. This work provides a new approach to assembling uncooled IR photodetectors based on 2D materials.

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Keywords

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Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetection

Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetection

DOI：10.1038/s41377-022-01047-5

摘要

Abstract

关键词

Keywords

references

Phase-controlled van der Waals growth of wafer-scale 2D MoTe₂ layers for integrated high-sensitivity broadband infrared photodetection

Phase-controlled van der Waals growth of wafer-scale 2D MoTe₂ layers for integrated high-sensitivity broadband infrared photodetection