Graphene/MoS<sub>2−x</sub>O<sub>x</sub>/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing

Xiao Fu; Tangxin Li; Bin Cai; Jinshui Miao; Gennady N. Panin; Xinyu Ma; Jinjin Wang; Xiaoyong Jiang; Qing Li; Yi Dong; Chunhui Hao; Juyi Sun; Hangyu Xu; Qixiao Zhao; Mengjia Xia; Bo Song; Fansheng Chen; Xiaoshuang Chen; Wei Lu; Weida Hu

doi:10.1038/s41377-023-01079-5

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Graphene/MoS_2−xO_x/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing

Original Articles

- Graphene/MoS_2−xO_x/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing
- Graphene/MoS_2−xO_x/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing
- 光：科学与应用 2023年12卷第2期页码：284-293
- Affiliations：
  
  1.School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
  2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
  3.University of Chinese Academy of Sciences, 100049, Beijing, China
  4.Institute of Intelligent Machines, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China
  5.Jianghuai Frontier Technology Coordination and Innovation Center, Hefei, 230088, China
  6.Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow district, 142432, Russia
- Author bio：
  
  Jinshui Miao (jsmiao@mail.sitp.ac.cn)
  Bo Song (songbo@iim.ac.cn)
  Weida Hu (wdhu@mail.sitp.ac.cn)
- Funds：
- DOI：10.1038/s41377-023-01079-5
  中图分类号：
- 纸质出版日期：2023-2-28，
  
  网络出版日期：2023-2-7，
  
  收稿日期：2022-11-15，
  
  修回日期：2023-1-6，
  
  录用日期：2023-1-13
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Graphene/MoS_2−xO_x/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing[J]. 光：科学与应用, 2023,12(2):284-293.

Fu, X. et al. Graphene/MoS_2−xO_x/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing. Light: Science & Applications, 12, 284-293 (2023).
Graphene/MoS_2−xO_x/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing[J]. 光：科学与应用, 2023,12(2):284-293. DOI： 10.1038/s41377-023-01079-5.

Fu, X. et al. Graphene/MoS_2−xO_x/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing. Light: Science & Applications, 12, 284-293 (2023). DOI： 10.1038/s41377-023-01079-5.

摘要

Abstract

Conventional artificial intelligence (AI) machine vision technology

based on the von Neumann architecture

uses separate sensing

computing

and storage units to process huge amounts of vision data generated in sensory terminals. The frequent movement of redundant data between sensors

processors and memory

however

results in high-power consumption and latency. A more efficient approach is to offload some of the memory and computational tasks to sensor elements that can perceive and process the optical signal simultaneously. Here

we proposed a non-volatile photomemristor

in which the reconfigurable responsivity can be modulated by the charge and/or photon flux through it and further stored in the device. The non-volatile photomemristor has a simple two-terminal architecture

in which photoexcited carriers and oxygen-related ions are coupled

leading to a displaced and pinched hysteresis in the current-voltage characteristics. For the first time

non-volatile photomemristors implement computationally complete logic with photoresponse-stateful operations

for which the same photomemristor serves as both a logic gate and memory

using photoresponse as a physical state variable instead of light

voltage and memresistance. The polarity reversal of photomemristors shows great potential for in-memory sensing and computing with feature extraction and image recognition for neuromorphic vision.

关键词

Keywords

references

R. H. Masland. The neuronal organization of the retina. Neuron, 2012. 76266-280. DOI:10.1016/j.neuron.2012.10.002http://doi.org/10.1016/j.neuron.2012.10.002.

T. Gollisch, M. Meister. Eye smarter than scientists believed: neural computations in circuits of the retina. Neuron, 2010. 65150-164. DOI:10.1016/j.neuron.2009.12.009http://doi.org/10.1016/j.neuron.2009.12.009.

G. Indiveri, R. Douglas. Neuromorphic vision sensors. Science, 2000. 2881189-1190. DOI:10.1126/science.288.5469.1189http://doi.org/10.1126/science.288.5469.1189.

C. Pan, 等. Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions. Nat. Electr., 2020. 3383-390. DOI:10.1038/s41928-020-0433-9http://doi.org/10.1038/s41928-020-0433-9.

F. C. Zhou, Y. Chai. Near-sensor and in-sensor computing. Nat. Electr., 2020. 3664-671. DOI:10.1038/s41928-020-00501-9http://doi.org/10.1038/s41928-020-00501-9.

X. W. Liu, 等. Reconfigurable compute-in-memory on field-programmable ferroelectric diodes. Nano Lett., 2022. 227690-7698. DOI:10.1021/acs.nanolett.2c03169http://doi.org/10.1021/acs.nanolett.2c03169.

X. W. Liu, 等. Post-CMOS compatible aluminum scandium nitride/2D channel ferroelectric field-effect-transistor memory. Nano Lett., 2021. 213753-3761. DOI:10.1021/acs.nanolett.0c05051http://doi.org/10.1021/acs.nanolett.0c05051.

X. W. Liu, 等. Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios. Appl. Phys. Lett., 2021. 118202901DOI:10.1063/5.0051940http://doi.org/10.1063/5.0051940.

C. Y. Wang, 等. Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor. Sci. Adv., 2020. 6DOI:10.1126/sciadv.aba6173http://doi.org/10.1126/sciadv.aba6173.

X. Hou, 等. A logic-memory transistor with the integration of visible information sensing-memory-processing. Adv. Sci., 2020. 72002072DOI:10.1002/advs.202002072http://doi.org/10.1002/advs.202002072.

S. Y. Wang, 等. A MoS2/PTCDA hybrid heterojunction synapse with efficient photoelectric dual modulation and versatility. Adv. Mater., 2019. 311806227DOI:10.1002/adma.201806227http://doi.org/10.1002/adma.201806227.

C. Choi, 等. Curved neuromorphic image sensor array using a MoS2-organic heterostructure inspired by the human visual recognition system. Nat. Commun., 2020. 115934DOI:10.1038/s41467-020-19806-6http://doi.org/10.1038/s41467-020-19806-6.

E. Funatsu, 等. An artificial retina chip with current-mode focal plane image processing functions. IEEE Trans. Electron Dev., 1997. 441777-1782. DOI:10.1109/16.628836http://doi.org/10.1109/16.628836.

Y. Nitta, 等. Optical learning neurochip with internal analog memory. Appl. Opt., 1993. 321264-1274. DOI:10.1364/AO.32.001264http://doi.org/10.1364/AO.32.001264.

S. Lee, 等. Programmable black phosphorus image sensor for broadband optoelectronic edge computing. Nat. Commun., 2022. 131485DOI:10.1038/s41467-022-29171-1http://doi.org/10.1038/s41467-022-29171-1.

Z. H. Zhang, 等. All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition. Nat. Nanotechnol., 2022. 1727-32. DOI:10.1038/s41565-021-01003-1http://doi.org/10.1038/s41565-021-01003-1.

L. Tong, 等. 2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware. Science, 2021. 3731353-1358. DOI:10.1126/science.abg3161http://doi.org/10.1126/science.abg3161.

Y. Nitta, 等. Optical neurochip with learning capability. IEEE Photonics Technol. Lett., 1992. 4247-249. DOI:10.1109/68.122381http://doi.org/10.1109/68.122381.

L. Mennel, 等. Ultrafast machine vision with 2D material neural network image sensors. Nature, 2020. 57962-66. DOI:10.1038/s41586-020-2038-xhttp://doi.org/10.1038/s41586-020-2038-x.

K. Berggren, 等. Roadmap on emerging hardware and technology for machine learning. Nanotechnology, 2020. 32012002DOI:10.1088/1361-6528/aba70fhttp://doi.org/10.1088/1361-6528/aba70f.

F. Wang, 等. Fully depleted self-aligned heterosandwiched van der waals photodetectors. Adv. Mater., 2022. 342203283DOI:10.1002/adma.202203283http://doi.org/10.1002/adma.202203283.

D. B. Strukov, 等. The missing memristor found. Nature, 2008. 45380-83. DOI:10.1038/nature06932http://doi.org/10.1038/nature06932.

J. J. Yang, 等. Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol., 2008. 3429-433. DOI:10.1038/nnano.2008.160http://doi.org/10.1038/nnano.2008.160.

L. Chua. Memristor-the missing circuit element. IEEE Trans. Circuit Theory, 1971. 18507-519. DOI:10.1109/TCT.1971.1083337http://doi.org/10.1109/TCT.1971.1083337.

W. Huh, D. Lee, C. H. Lee. Memristors based on 2D materials as an artificial synapse for neuromorphic electronics. Adv. Mater., 2020. 322002092DOI:10.1002/adma.202002092http://doi.org/10.1002/adma.202002092.

X. Fu, 等. Molybdenum disulfide nanosheet/quantum dot dynamic memristive structure driven by photoinduced phase transition. Small, 2019. 151903809DOI:10.1002/smll.201903809http://doi.org/10.1002/smll.201903809.

W. Wang, 等. MoS2 memristor with photoresistive switching. Sci. Rep., 2016. 631224DOI:10.1038/srep31224http://doi.org/10.1038/srep31224.

C. Wang, 等. Scalable massively parallel computing using continuous-time data representation in nanoscale crossbar array. Nat. Nanotechnol., 2021. 161079-1085. DOI:10.1038/s41565-021-00943-yhttp://doi.org/10.1038/s41565-021-00943-y.

M. Wang, 等. Robust memristors based on layered two-dimensional materials. Nat. Electr., 2018. 1130-136. DOI:10.1038/s41928-018-0021-4http://doi.org/10.1038/s41928-018-0021-4.

P. Yao, 等. Fully hardware-implemented memristor convolutional neural network. Nature, 2020. 577641-646. DOI:10.1038/s41586-020-1942-4http://doi.org/10.1038/s41586-020-1942-4.

C. Li, 等. Efficient and self-adaptive in-situ learning in multilayer memristor neural networks. Nat. Commun., 2018. 92385DOI:10.1038/s41467-018-04484-2http://doi.org/10.1038/s41467-018-04484-2.

J. Borghetti, 等. 'Memristive' switches enable 'stateful' logic operations via material implication. Nature, 2010. 464873-876. DOI:10.1038/nature08940http://doi.org/10.1038/nature08940.

H. W. Chen, 等. Logic gates based on neuristors made from two-dimensional materials. Nat. Electr., 2021. 4399-404. DOI:10.1038/s41928-021-00591-zhttp://doi.org/10.1038/s41928-021-00591-z.

W. Kim, 等. Perovskite multifunctional logic gates via bipolar photoresponse of single photodetector. Nat. Commun., 2022. 13720DOI:10.1038/s41467-022-28374-whttp://doi.org/10.1038/s41467-022-28374-w.

S. Bhattacharjee, 等. Hole injection and rectifying heterojunction photodiodes through vacancy engineering in MoS2. Adv. Electr. Mater., 2019. 51800863DOI:10.1002/aelm.201800863http://doi.org/10.1002/aelm.201800863.

A. T. Neal, R. Pachter, S. Mou. P-type conduction in two-dimensional MoS2 via oxygen incorporation. Appl. Phys. Lett., 2017. 110193103DOI:10.1063/1.4983092http://doi.org/10.1063/1.4983092.

S. X. Wu, 等. High-performance p-type MoS2 field-effect transistor by toroidal-magnetic-field controlled oxygen plasma doping. 2D Mater., 2019. 6025007DOI:10.1088/2053-1583/aafe2dhttp://doi.org/10.1088/2053-1583/aafe2d.

O. O. Kapitanova, 等. Laterally selective oxidation of large-scale graphene with atomic oxygen. J. Phys. Chem. C, 2017. 12127915-27922. DOI:10.1021/acs.jpcc.7b07840http://doi.org/10.1021/acs.jpcc.7b07840.

B. Park, 等. Stacking-specific reversible oxidation of bilayer graphene. Chem. Mater., 2021. 331249-1256. DOI:10.1021/acs.chemmater.0c04026http://doi.org/10.1021/acs.chemmater.0c04026.

N. C. Frey, 等. Machine learning-enabled design of point defects in 2D materials for quantum and neuromorphic information processing. ACS Nano, 2020. 1413406-13417. DOI:10.1021/acsnano.0c05267http://doi.org/10.1021/acsnano.0c05267.

S. M. Sze, D. J. Jr Coleman, A. Loya. Current transport in metal-semiconductor-metal (MSM) structures. Solid-State Electr., 1971. 141209-1218. DOI:10.1016/0038-1101(71)90109-2http://doi.org/10.1016/0038-1101(71)90109-2.

L. J. Pi, 等. Broadband convolutional processing using band-alignment-tunable heterostructures. Nat. Electr., 2022. 5248-254. DOI:10.1038/s41928-022-00747-5http://doi.org/10.1038/s41928-022-00747-5.

Y. Mulyana, 等. Reversible oxidation of graphene through ultraviolet/ozone treatment and its nonthermal reduction through ultraviolet irradiation. J. Phys. Chem. C, 2014. 11827372-27381. DOI:10.1021/jp508026ghttp://doi.org/10.1021/jp508026g.

S. Kwon, 等. Reversible oxidation states of single layer graphene tuned by electrostatic potential. Surf. Sci., 2013. 61237-41. DOI:10.1016/j.susc.2013.02.010http://doi.org/10.1016/j.susc.2013.02.010.

O. O. Kapitanova, 等. Formation of self-assembled nanoscale graphene/graphene oxide photomemristive heterojunctions using photocatalytic oxidation. Nanotechnology, 2017. 28204005DOI:10.1088/1361-6528/aa655chttp://doi.org/10.1088/1361-6528/aa655c.

V. K. Nagareddy, 等. Multilevel ultrafast flexible nanoscale nonvolatile hybrid graphene oxide–titanium oxide memories. ACS Nano, 2017. 113010-3021. DOI:10.1021/acsnano.6b08668http://doi.org/10.1021/acsnano.6b08668.

X. Fu, 等. Geometry-asymmetric photodetectors from metal–semiconductor–metal van der Waals heterostructures. Mater. Horizons, 2022. 93095-3101. DOI:10.1039/D2MH00872Fhttp://doi.org/10.1039/D2MH00872F.

F. C. Zhou, 等. Optoelectronic resistive random access memory for neuromorphic vision sensors. Nat. Nanotechnol., 2019. 14776-782. DOI:10.1038/s41565-019-0501-3http://doi.org/10.1038/s41565-019-0501-3.

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Graphene/MoS2−xOx/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing

Graphene/MoS2−xOx/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing

DOI：10.1038/s41377-023-01079-5

摘要

Abstract

关键词

Keywords

references

Graphene/MoS_2−xO_x/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing

Graphene/MoS_2−xO_x/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing