Monolithic integration of embedded Ⅲ-Ⅴ lasers on SOI

Wen-Qi Wei; An He; Bo Yang; Zi-Hao Wang; Jing-Zhi Huang; Dong Han; Ming Ming; Xuhan Guo; Yikai Su; Jian-Jun Zhang; Ting Wang

doi:10.1038/s41377-023-01128-z

Go to Nature Website

Your Location：

Home >

Browse articles >

Monolithic integration of embedded Ⅲ-Ⅴ lasers on SOI

Original Articles

- Monolithic integration of embedded Ⅲ-Ⅴ lasers on SOI
- Monolithic integration of embedded Ⅲ-Ⅴ lasers on SOI
- 光：科学与应用 2023年12卷第5期页码：743-753
- Affiliations：
  
  1.Institute of Physics, Chinese Academy of Sciences, Beijing, China
  2.Songshan Lake Materials Laboratory, Dongguan, Guangdong, China
  3.State Key Laboratory of Advanced Optical, Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, China
  4.School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
- Author bio：
  
  Xuhan Guo (guoxuhan@sjtu.edu.cn)
  Yikai Su (yikaisu@sjtu.edu.cn)
  Jian-Jun Zhang (jjzhang@iphy.ac.cn)
  Ting Wang (wangting@iphy.ac.cn)
- Funds：
- DOI：10.1038/s41377-023-01128-z
  中图分类号：
- 纸质出版日期：2023-5-31，
  
  网络出版日期：2023-4-3，
  
  收稿日期：2022-9-17，
  
  修回日期：2023-3-3，
  
  录用日期：2023-3-7
Scan for full text
Monolithic integration of embedded Ⅲ-Ⅴ lasers on SOI[J]. 光：科学与应用, 2023,12(5):743-753.

Wei, W. Q. et al. Monolithic integration of embedded Ⅲ-Ⅴ lasers on SOI. Light: Science & Applications, 12, 743-753 (2023).
Monolithic integration of embedded Ⅲ-Ⅴ lasers on SOI[J]. 光：科学与应用, 2023,12(5):743-753. DOI： 10.1038/s41377-023-01128-z.

Wei, W. Q. et al. Monolithic integration of embedded Ⅲ-Ⅴ lasers on SOI. Light: Science & Applications, 12, 743-753 (2023). DOI： 10.1038/s41377-023-01128-z.

摘要

Abstract

Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of Ⅲ-Ⅴ lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration

which can provide considerable economical

energy-efficient and foundry-scalable on-chip light sources

that has not been reported yet. Here

we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate

enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy (MBE)

high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture

embedded Ⅲ-Ⅴ lasers on SOI with continuous-wave lasing up to 85 ℃ are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides

with estimated coupling efficiency of approximately -6.7 dB. The results presented here provide a scalable and low-cost epitaxial method for the realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration.

关键词

Keywords

references

Miller,D.A.B.Devicerequirementsforopticalinterconnectstosiliconchips.Proc. IEEE97,1166–1185(2009)..

Asghari,M.&Krishnamoorthy,A.V.Siliconphotonics:energy-efficientcommunication.Nat. Photo.5,268–270(2011)..

Rickman,A.Thecommercializationofsiliconphotonics.Nat. Photonics8,579–582(2014)..

Komljenovic,T.etal.Photonicintegratedcircuitsusingheterogeneousintegrationonsilicon.Proc. IEEE106,2246–2257(2018)..

Zhou,Z.P.,Yin,B.&Michel,J.On-chiplightsourcesforsiliconphotonics.Light Sci. Appl.4,e358(2015)..

Wan,Y.T.etal.Quantumdotlasersandamplifiersonsilicon:recentadvancesandfuturedevelopments.IEEE Nanotechnol. Mag.15,8–22(2021)..

Fang,A.W.etal.ElectricallypumpedhybridAlGaInAs-siliconevanescentlaser.Opt. Express14,9203–9210(2006)..

Fang,A.W.etal.Hybridsiliconevanescentdevices.Mater. Today10,28–35(2007)..

Komljenovic,T.etal.Heterogeneoussiliconphotonicintegratedcircuits.J. Lightwave Technol.34,20–35(2016)..

Liang,D.etal.Integratedfinelytunablemicroringlaseronsilicon.Nat. Photonics10,719–722(2016)..

Shu,H.W.etal.Microcomb-drivensiliconphotonicsystems.Nature605,457–463(2022)..

Shang,C.etal.PerspectivesonadvancesinquantumdotlasersandintegrationwithSiphotonicintegratedcircuits.ACS Photonics8,2555–2566(2021)..

Wang,T.etal.1.3-μmInAs/GaAsquantum-dotlasersmonolithicallygrownonSisubstrates.Opt. Express19,11381–11386(2011)..

Chen,S.M.etal.Electricallypumpedcontinuous-waveⅢ-Ⅴquantumdotlasersonsilicon.Nat. Photo.10,307–311(2016)..

Norman,J.etal.Electricallypumpedcontinuouswavequantumdotlasersepitaxiallygrownonpatterned,on-axis(001)Si.Opt. Express25,3927–3934(2017)..

Kwoen,J.etal.AllMBEgrownInAs/GaAsquantumdotlasersonon-axisSi(001).Opt. Exp.26,11568–11576(2018)..

Zhang,B.etal.O-bandInAs/GaAsquantum-dotmicrocavitylaseronSi(001)hollowsubstratebyin-situhybridepitaxy.AIP Adv.9,015331(2019)..

Wan,Y.T.etal.Directlymodulatedsingle-modetunablequantumdotlasersat1.3μm.Laser Photo. Rev.14,1900348(2020)..

Shang,C.etal.High-temperaturereliablequantum-dotlasersonSiwithmisfitandthreadingdislocationfilters.Optica8,749–754(2021)..

Dhingra,P.etal.Low-thresholdInPquantumdotandInGaPquantumwellvisiblelasersonsilicon(001).Optica8,1495–1500(2021)..

Li,Q.,Ng,K.W.&Lau,K.M.Growingantiphase-domain-freeGaAsthinfilmsoutofhighlyorderedplanarnanowirearraysonexact(001)silicon.Appl. Phys. Lett.106,072105(2015)..

Alcotte,R.etal.EpitaxialgrowthofantiphaseboundaryfreeGaAslayeron300mmSi(001)substratebymetalorganicchemicalvapourdepositionwithhighmobility.APL Mater.4,046101(2016)..

Liu,A.Y.etal.Electricallypumpedcontinuous-wave1.3μmquantum-dotlasersepitaxiallygrownonon-axis(001)GaP/Si.Opt. Lett.42,338–341(2017)..

Wei,W.Q.etal.InAsQDson(111)-facetedSi(001)hollowsubstrateswithstrongemissionat1300nmand1550nm.Appl. Phys. Lett.113,053107(2018)..

Feng,Q.etal.O-bandandC/L-bandⅢ-ⅤquantumdotlasersmonolithicallygrownonGeandSisubstrate.Appl. Sci.9,385(2019)..

Tian,B.etal.RoomtemperatureO-bandDFBlaserarraydirectlygrownon(001)silicon.Nano Lett.17,559–564(2017)..

Wang,Y.etal.Monolithicquantum-dotdistributedfeedbacklaserarrayonsilicon.Optica5,528–533(2018)..

Wan,Y.T.etal.Tunablequantumdotlasersgrowndirectlyonsilicon.Optica6,1394–1400(2019)..

Wan,Y.T.etal.1.3μmquantumdot-distributedfeedbacklasersdirectlygrownon(001)Si.Laser Photo. Rev.14,2000037(2020)..

Wan,Y.T.etal.Opticallypumped1.3μmroom-temperatureInAsquantum-dotmicro-disklasersdirectlygrownon(001)silicon.Opt. Lett.41,1664–1667(2016)..

Wan,Y.T.etal.1.3μmsubmilliampthresholdquantumdotmicro-lasersonSi.Optica4,940–944(2017)..

Zhang,B.etal.1310nmInAsquantum-dotmicrodisklasersonSOIbyhybridepitaxy.Opt. Express27,19348–19358(2019)..

Liu,S.T.etal.High-channel-count20GHzpassivelymode-lockedquantumdotlaserdirectlygrownonSiwith4.1Tbit/stransmissioncapacity.Optica6,128–134(2019)..

Wang,Z.H.etal.InAs/GaAsquantumdotsingle-sectionmode-lockedlasersonSi(001)withopticalself-injectionfeedback.Opt. Express29,674–683(2021)..

Chang,L.,Liu,S.T.&Bowers,J.E.Integratedopticalfrequencycombtechnologies.Nat. Photonics16,95–108(2022)..

Chen,J.J.etal.Multi-wavelengthinjectionlockedsemiconductorcomblaser.Photonics Res.10,1840–1847(2022)..

Wei,W.Q.etal.Phosphorus-free1.5µmInAsquantum-dotmicrodisklasersonmetamorphicInGaAs/SOIplatform.Opt. Lett.45,2042–2045(2020)..

Han,Y.etal.Bufferless1.5µmⅢ-ⅤlasersgrownonSi-photonics220nmsilicon-on-insulatorplatforms.Optica7,148–153(2020)..

Wei,W.Q.etal.InAs/GaAsquantumdotnarrowridgelasersepitaxiallygrownonSOIsubstratesforsiliconphotonicintegration.Opt. Express28,26555–26563(2020)..

Huang,J.Z.etal.P-doped1300nmInAs/GaAsquantumdotlasersdirectlygrownonanSOIsubstrate.Opt. Lett.46,5525–5528(2021)..

He,A.etal.Lowloss,largebandwidthfiber-chipedgecouplersbasedonsilicon-on-insulatorplatform.J. Lightwave Technol.38,4780–4786(2020)..

He,A.etal.Ultracompactfiber-to-chipmetamaterialedgecoupler.ACS Photonics8,3226–3233(2021)..

Wang,J.etal.Comparisonandanalysisonsingle-layerSifiber-to-chipedgecouplerswithdifferenttapertips.2016IEEE13thInternationalConferenceonGroupⅣPhotonics(GFP).Shanghai:IEEE,44–45,(2016).

Tao,S.H.etal.Improvingcouplingefficiencyoffiber-waveguidecouplingwithadouble-tipcoupler.Opt. Express16,20803–20808(2008)..

Wei,W.Q.etal.ACMOScompatibleSitemplatewith(111)facetsfordirectepitaxialgrowthofⅢ–Ⅴmaterials.Chin. Phys. Lett.37,024203(2020)..

Wei,W.Q.etal.ReliableInAsquantumdotlasersgrownonpatternedSi(001)substratewithembeddedhollowstructuresassistedthermalstressrelaxation.J. Phys. D: Appl. Phys.55,405105(2022)..

Chen,J.J.etal.Soleexcited-stateInAsquantumdotlaseronsiliconwithstrongfeedbackresistance.Front. Mater.8,648049(2021)..

Shang,C.etal.Electricallypumpedquantum-dotlasersgrownon300mmpatternedSiphotonicwafers.Light Sci. Appl.11,299(2022)..

Zhang,Z.Y.etal.Monolithicpassive-activeintegrationofepitaxiallygrownquantumdotlasersonsilicon.Phys. Status Solidi (A)219,2100522(2022)..

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

暂无数据