1.Department of Physics, Brown University, Providence, RI 02912, USA
2.School of Engineering, Brown University, Providence, RI 02912, USA
Angela Pizzuto (angela_pizzuto@brown.edu)
纸质出版日期:2023-5-31,
网络出版日期:2023-4-19,
收稿日期:2022-9-8,
修回日期:2023-2-15,
录用日期:2023-3-20
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Near-field terahertz nonlinear optics with blue light[J]. 光:科学与应用, 2023,12(5):838-846.
Pizzuto, A., Ma, P. C. & Mittleman, D. M. Near-field terahertz nonlinear optics with blue light. Light: Science & Applications, 12, 838-846 (2023).
Near-field terahertz nonlinear optics with blue light[J]. 光:科学与应用, 2023,12(5):838-846. DOI: 10.1038/s41377-023-01137-y.
Pizzuto, A., Ma, P. C. & Mittleman, D. M. Near-field terahertz nonlinear optics with blue light. Light: Science & Applications, 12, 838-846 (2023). DOI: 10.1038/s41377-023-01137-y.
The coupling of terahertz optical techniques to scattering-type scanning near-field microscopy (s-SNOM) has recently emerged as a valuable new paradigm for probing the properties of semiconductors and other materials on the nanoscale. Researchers have demonstrated a family of related techniques
including terahertz nanoscopy (elastic scattering
based on linear optics)
time-resolved methods
and nanoscale terahertz emission spectroscopy. However
as with nearly all examples of s-SNOM since the technique's inception in the mid-1990s
the wavelength of the optical source coupled to the near-field tip is long
usually at energies of 2.5 eV or less. Challenges in coupling of shorter wavelengths (i.e.
blue light) to the nanotip has greatly inhibited the study of nanoscale phenomena in wide bandgap materials such as Si and GaN. Here
we describe the first experimental demonstration of s-SNOM using blue light. With femtosecond pulses at 410 nm
we generate terahertz pulses directly from bulk silicon
spatially resolved with nanoscale resolution
and show that these signals provide spectroscopic information that cannot be obtained using near-infrared excitation. We develop a new theoretical framework to account for this nonlinear interaction
which enables accurate extraction of material parameters. This work establishes a new realm of possibilities for the study of technologically relevant wide-bandgap materials using s-SNOM methods.
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