Far-infrared transparent conductors

Chaoquan Hu; Zijian Zhou; Xiaoyu Zhang; Kaiyu Guo; Can Cui; Yuankai Li; Zhiqing Gu; Wei Zhang; Liang Shen; Jiaqi Zhu

doi:10.1038/s41377-023-01139-w

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Far-infrared transparent conductors

Original Articles

- Far-infrared transparent conductors
- Far-infrared transparent conductors
- 光：科学与应用 2023年12卷第6期页码：982-993
- Affiliations：
  
  1.State Key Laboratory of Superhard Materials, Key Laboratory of Automobile Materials of Ministry of Education, School of Materials Science and Engineering, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun 130012, China
  2.College of Information Science and Engineering, Jiaxing University, Jiaxing 314001, China
  3.Electron Microscopy Center, Jilin University, Changchun 130012, China
  4.State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun 130012, China
  5.National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China
- Author bio：
  
  Chaoquan Hu (cqhu@jlu.edu.cn)
  Liang Shen (shenliang@jlu.edu.cn)
  Jiaqi Zhu (zhujq@hit.edu.cn)
- Funds：
- DOI：10.1038/s41377-023-01139-w
  中图分类号：
- 纸质出版日期：2023-6-30，
  
  网络出版日期：2023-4-21，
  
  收稿日期：2022-10-18，
  
  修回日期：2023-3-22，
  
  录用日期：2023-3-22
Scan for full text
Far-infrared transparent conductors[J]. 光：科学与应用, 2023,12(6):982-993.

Hu, C. Q. et al. Far-infrared transparent conductors. Light: Science & Applications, 12, 982-993 (2023).
Far-infrared transparent conductors[J]. 光：科学与应用, 2023,12(6):982-993. DOI： 10.1038/s41377-023-01139-w.

Hu, C. Q. et al. Far-infrared transparent conductors. Light: Science & Applications, 12, 982-993 (2023). DOI： 10.1038/s41377-023-01139-w.

摘要

Abstract

The long-standing challenge in designing far-infrared transparent conductors (FIRTC) is the combination of high plasma absorption edge (

) and high conductivity (

). These competing requirements are commonly met by tuning carrier concentration or/and effective carrier mass in a metal oxide/oxonate with low optical dielectric constant (

opt

= 2–7). However

despite the high

the transparent band is limited to mid-infrared (

5 μm). In this paper

we break the trade-off between high

and

by increasing the “so-called constant”

opt

that has been neglected

and successfully develop the material family of FIRTC with

opt

15 and

15 μm. These FIRTC crystals are mainly octahedrally-coordinated heavy-metal chalcogenides and their solid solutions with shallow-level defects. Their high

opt

relies on the formation of electron-deficiency multicenter bonds resulting in the great electron-polarization effect. The new FIRTC enables us to develop the first “continuous film” type far-infrared electromagnetic shielder that is unattainable using traditional materials. Therefore

this study may inaugurate a new era in far-infrared optoelectronics.

关键词

Keywords

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