Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration

Longheng Qi; Peian Li; Xu Zhang; Ka Ming Wong; Kei May Lau

doi:10.1038/s41377-023-01298-w

Go to Nature Website

Your Location：

Home >

Browse articles >

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration

Original Articles

- Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration
- Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration
- LSA 2023年12卷第11期页码：2459-2467
- Affiliations：
  
  Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
- Author bio：
  
  Kei May Lau (eekmlau@ust.hk)
- Funds：
- DOI：10.1038/s41377-023-01298-w
  中图分类号：
- 纸质出版日期：2023-11-30，
  
  网络出版日期：2023-10-30，
  
  收稿日期：2023-06-22，
  
  修回日期：2023-09-28，
  
  录用日期：2023-10-04
- Accepted：
Scan QR Code
Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration[J]. LSA, 2023,12(11):2459-2467.

Qi, L. H. et al. Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration. Light: Science & Applications, 12, 2459-2467 (2023).
Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration[J]. LSA, 2023,12(11):2459-2467. DOI： 10.1038/s41377-023-01298-w.

Qi, L. H. et al. Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration. Light: Science & Applications, 12, 2459-2467 (2023). DOI： 10.1038/s41377-023-01298-w.

摘要

Abstract

A prototype of full-color active-matrix micro-light-emitting diode (micro-LED) micro-display with a pixel density of 391 pixel per inch (ppi) using InGaN/AlGaInP heterogeneous integration is demonstrated. InGaN blue/green dual-color micro-LED arrays realized on a single metal organic chemical vapor deposition (MOCVD)-grown GaN-on-Si epiwafer and AlGaInP red micro-LED arrays are both monolithically fabricated

followed by the integration with a common complementary metal oxide semiconductor (CMOS) backplane via flip-chip bonding technology to form a double-layer thin-film display structure. Full-color images with decent color gamut and brightness are successfully displayed through the fine adjustment of driving current densities of RGB subpixels. This full-color display combines the advantages of high quantum efficiency of InGaN material on blue/green light and AlGaInP material on red light through heterogeneous integration and high pixel density through monolithic fabrication approach

demonstrating the feasibility and prospects of high brightness

good color performance

and high-resolution micro-LED micro-displays in future metaverse applications.

关键词

Keywords

references

Huang, Y. G. et al. Mini-LED, Micro-LED and OLED displays: present status and future perspectives.Light Sci. Appl.9, 105 (2020)..

Xiong, J. H. et al. Augmented reality and virtual reality displays: emerging technologies and future perspectives.Light Sci. Appl.10, 216 (2021)..

Lee, Y. H., Zhan, T.&Wu, S. T. Prospects and challenges in augmented reality displays.Virtual Real. Intell. Hardw.1, 10–20 (2019)..

Park, J. et al. Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses.Nat. Photonics15, 449–455 (2021)..

Chen, Z., Yan, S. K.&Danesh, C. MicroLED technologies and applications: characteristics, fabrication, progress, and challenges.J. Phys. D Appl. Phys.54, 123001 (2021)..

Zhou, X. J. et al. Growth, transfer printing and colour conversion techniques towards full-colour micro-LED display.Prog. Quantum Electron.71, 100263 (2020)..

Wu, Y. F. et al. Full-color realization of micro-LED displays.Nanomaterials10, 2482 (2020)..

Han, H. V. et al. Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology.Opt. Express23, 32504–32515 (2015)..

Bae, J. et al. Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit.Nat. Commun.13, 1862 (2022)..

Huang, Y. M. et al. High-uniform and high-efficient color conversion nanoporous GaN-based micro-LED display with embedded quantum dots.Nanomaterials11, 2696 (2021)..

Lin, H. Y. et al. Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold.Photonics Res.5, 411–416 (2017)..

Kim, W. H. et al. High-performance color-converted full-color micro-LED arrays.Appl. Sci.10, 2112 (2020)..

Kawanishi, H. et al. High-resolution and high-brightness full-colour "Silicon Display" for augmented and mixed reality.J. Soc. Inf. Disp.29, 57–67 (2021)..

Zhang, X. et al. Active matrix monolithic micro-LED full-color micro-display.J. Soc. Inf. Disp.29, 47–56 (2021)..

Day, J. et al. Ⅲ-Nitride full-scale high-resolution microdisplays.Appl. Phys. Lett.99, 031116 (2011)..

Chong, W. C. et al. 1700 pixels per inch (PPI) passive-matrix micro-LED display powered by ASIC.Proc. IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). La Jolla: IEEE, 1–4, 2014.

Zhang, L. et al. Wafer-scale monolithic hybrid integration of Si-based IC and Ⅲ–Ⅴ epi-layers—a mass manufacturable approach for active matrix micro-LED micro-displays.J. Soc. Inf. Disp.26, 137–145 (2018)..

Quesnel, E. et al. Dimensioning a full color LED microdisplay for augmented reality headset in a very bright environment.J. Soc. Inf. Disp.29, 3–16 (2021)..

Qi, L. H. et al. Monolithically integrated high-resolution full-color GaN-on-Si micro-LED microdisplay.Photonics Res.11, 109–120 (2023)..

Mun, S. H. et al. Highly efficient full-color inorganic LEDs on a single wafer by using multiple adhesive bonding.Adv. Mater. Interfaces8, 2100300 (2021)..

Kang, C. M. et al. Hybrid full-color inorganic light-emitting diodes integrated on a single wafer using selective area growth and adhesive bonding.ACS Photonics5, 4413–4422 (2018)..

Li, L. Z. et al. Transfer-printed, tandem microscale light-emitting diodes for full-color displays.Proc. Natl Acad. Sci. USA118, e2023436118 (2021)..

Shin, J. et al. Vertical full-colour micro-LEDs via 2D materials-based layer transfer.Nature614, 81–87 (2023)..

El-Ghoroury, H. S., Chuang, C. L.&Alpaslan, Z. Y. 26.1: Invited paper: quantum photonic imager (QPI): a novel display technology that enables more than 3D applications.SID Symp. Dig. Tech. Pap.46, 371–374 (2015)..

Yadavalli, K., Chuang, C. L.&El-Ghoroury, H. S. Monolithic and heterogeneous integration of RGB micro-LED arrays with pixel-level optics array and CMOS image processor to enable small form-factor display applications. Proc. SPIE 11310, Optical Architectures for Displays and Sensing in Augmented, Virtual, and Mixed Reality (AR, VR, MR). San Francisco: SPIE, 2020, 113100Z.

Li, P. A. et al. Full-color micro-display by heterogeneous integration of InGaN blue/green dual-wavelength and AlGaInP red LEDs.Opt. Express30, 23499–23510 (2022)..

Qi, Y. D. et al. Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy.J. Cryst. Growth272, 333–340 (2004)..

Zhang, M. Y. et al. Luminescence properties of InGaN-based dual-wavelength light-emitting diodes with different quantum-well arrangements.Phys. Status Solidi (A)212, 954–959 (2015)..

Liu, J. P. et al. Barrier effect on hole transport and carrier distribution in InGaN/GaN multiple quantum well visible light-emitting diodes.Appl. Phys. Lett.93, 021102 (2008)..

Qi, L. H. et al. 848 ppi high-brightness active-matrix micro-LED micro-display using GaN-on-Si epi-wafers towards mass production.Opt. Express29, 10580–10591 (2021)..

Li, P. A. et al. Monolithic thin film red LED active-matrix micro-display by flip-chip technology.IEEE Photonics Technol. Lett.33, 603–606 (2021)..

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

暂无数据